NPN SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6731 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE 100 UNIT V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 100 V IC=100µ A, IE=0 V(BR)CEO 80 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=1mA, IC=0 Collector Cut-Off Current ICBO 0.1 µA VCB=80V, IE=0 Emitter Cut-Off Current IEBO 10 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.35 V IC=350mA, IB=35mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=350mA, VCE=2V* Static Forward Current hFE Transfer Ratio 100 100 300 IC=10mA, VCE=2V* IC=350mA, VCE=2V* Transition Frequency fT 50 500 MHz IC=200mA, VCE=5V f=20MHz Collector-Base Capacitance CCB 20 pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-10