ZETEX FXT550

PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FXT550
ISSUE 1 – SEPT 93
FEATURES
* 45 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
B
C
REFER TO ZTX550 FOR GRAPHS
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Sustaining Voltage
UNIT
CONDITIONS.
-60
V
IC=-100µ A, IE=0
VCEO(sus)
-45
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µ A, IC=0
Collector Cut-Off
Current
ICBO
-0.1
µA
VCB=-45V, IE=0
Emitter Cut-Off Current IEBO
-0.1
µA
VEB=-4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.25
V
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-150mA, IB=-15mA*
Static Forward Current hFE
Transfer Ratio
100
15
Transition
Frequency
fT
150
Output Capacitance
Cobo
TYP.
MAX.
300
25
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
MHz
IC=-50mA, VCE=-10V
f=100MHz
pF
VCB=-10V,f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-37