PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT550 ISSUE 1 SEPT 93 FEATURES * 45 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX550 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage UNIT CONDITIONS. -60 V IC=-100µ A, IE=0 VCEO(sus) -45 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -0.1 µA VCB=-45V, IE=0 Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC=-150mA, IB=-15mA* Static Forward Current hFE Transfer Ratio 100 15 Transition Frequency fT 150 Output Capacitance Cobo TYP. MAX. 300 25 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V,f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-37