BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 400 Units V 200 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A 10 A ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation TJ TSTG 4 A 60 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C IEBO Emitter Cut-off Current VCE(sat) Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Max. 5 100 1 Units mA µA mA VBE = 6V, IC = 0 1 mA IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A 1 1 1 V V V Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A 1.2 1.2 1.5 V V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A tOFF Turn OFF Time VBE(sat) : BU406 : BU406H : BU408 ©2000 Fairchild Semiconductor International IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A Min. 10 MHz 0.75 0.4 0.4 µs µs µs Rev. A, February 2000 BU406/406H/408 Typical Characteristics 5 00m A IB = mA 180 60mA IB = 1 1000 A IB = 140m A IB = 120m 4 VCE = 5V 0m A I B = 10 mA IB = 80 IB = 60 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 2 mA mA IB = 40 2 IB = 20mA 1 0 0 1 2 3 4 5 6 7 8 9 100 10 1 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 1000 10000 f = 1MHz IC = 10 IB Cob [pF], CAPACITANCE VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE 100 VBE (sat) 1000 100 VCE(sat) 100 10 1 10 1 10 100 1000 1 10000 10 IC[mA], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 IC Max. (Continuous) s 1m s m 10 s 0m 10 ited m Li 1 VCE MAX. d ite im bL S/ 0.1 1 10 PD [W], POWER DISSIPATIOAN IC Max. (Pulsed) 10 n io at ip ss Di IC[A], COLLECTOR CURRENT 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 100 o VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 BU406/406H/408 Typical Characteristics (Continued) Figure 7. Static Characteristic ©2000 Fairchild Semiconductor International Figure 8. DC current Gain Rev. A, February 2000 BU406/406H/408 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E