KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current 0.3 A PC Collector Power Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C 60 V 7 V 3 A Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 50mA, IB = 0 Min. 60 Typ. Max. ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA h FE1 hFE2 DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A 100 20 Units V 320 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.4 1 VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 0.5A 0.7 1 fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 V V MHz hFE Classification Classification Y G hFE1 100 ~ 200 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 1000 mA 90 mA I B = = 80 IB IB = 70mA IB = 60mA IB = 50mA 3 VCE = 5V hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT 4 IB = 40mA IB = 30mA 2 IB = 20mA IB = 10mA 1 100 10 IB = 0mA 0 0 1 2 3 4 5 6 7 1 0.01 8 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 4 10 Ic = 10 IB VCE = 5V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 1 0.1 3 2 1 0 0.01 0.001 0.1 1 0.4 10 IC[A], COLLECTOR CURRENT 0.8 1.2 1.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 40 10 35 PC[W], POWER DISSIPATION S 0m ms S 1m 10 10 IC(max) 1S DC 1 VCEOMAX IC[A], COLLECTOR CURRENT ICmax(pulse) 30 25 20 15 10 5 0 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 100 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD2012 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E