ACE2301 Technology P-Channel Enhancement Mode MOSFET Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • VDS=-20V RDS(ON),[email protected],[email protected]=100mΩ RDS(ON),[email protected],[email protected]=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1) Maximum Power Dissipation Symbol VDS VGS ID IDM TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Junction to Ambient Thermal Resistance (PCB mounted)2) PD TJ TSTG RθJA Max Unit -20 V ±12 V -2.2 A -8 A 1.25 W 0.8 -55 to 150 OC -55 to 150 OC O 140 C/W Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2 2.1-in 2oz Cu PCB board. 3.Guaranteed by design; not subject to production testing. VER 1.2 1 ACE2301 Technology P-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE2301 XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.2 2 ACE2301 Technology P-Channel Enhancement Mode MOSFET Electrical Characteristics Parameter Symbol Conditions Min. -20 Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-2.8A 70.0 100.0 Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A 85.0 150.0 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA Zero Gate Voltage Drain Current IDSS Gate Body Leakage IGSS Forward Trans conductance Gfs -0.9 V VDS=-9.6V, VGS=0V -1 uA VGS=±8V, VDS=0V ±100 nA VDS=-5V, ID=-2.8A -0.4 mΩ 6.5 S Dynamic3) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time Tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-6V, ID=-2.8A VGS=-4.5V VDD=-6V,RL=6Ω ID=-1A, VGEN=-4.5V RG=6Ω VDS=-6V, VGS=0V F=1.0MHz 5.8 10 nC 0.85 1.7 13 25 36 60 42 70 34 60 ns 415 pF 223 87 Source-Drain Diode Max. Diode Forward Current IS Diode Forward Voltage VSD IS=-1.6A,VGS=0V -1.6 A -1.2 V Note: Pulse test pulse width<=300us, duty cycle<=2%. VER 1.2 3 ACE2301 Technology P-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 VER 1.2 4 ACE2301 Technology P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5