ACE4884 N-Channel Enhancement Mode MOSFET Description The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Features N-Channel 40V/10A,RDS(ON)= 20mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 24mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 30mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings TA=25℃ Unless otherwise noted Parameter Symbol Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) VGSS TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) TA=25℃ Power Dissipation TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient ID Unit 40 V ±20 V 10.0 A 8.0 IDM 25 A Is 2.3 A PD TJ TSTG T ≤ 10sec Steady State Typical RθJA 2.5 W 1.6 -55/150 -55/150 50 80 ℃ ℃ ℃/W VER 1.1 1 ACE4884 N-Channel Enhancement Mode MOSFET Packaging Type SOP-8 PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 Ordering information ACE4884 XX + H Halogen - free Pb - free FM : SOP-8 VER 1.1 2 ACE4884 N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted. Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=40V,VGS=0V IDSS VDS=40V,VGS=0V ID(on) RDS(on) VDS= 5V,VGS =4.5V VGS= 10V,ID=10A VGS=4.5V,ID= 8A VGS=2.5V,ID= 6A 40 0.5 1.0 ±100 1 10 10 V nA uA A 0.014 0.017 0.024 0.020 0.024 0.030 Forward Transconductance gfs VDS=15V,ID=6.2A 13 Diode Forward Voltage VSD IS=2.3A,VGS =0V 0.8 1.2 10 14 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time VDS=20V,VGS=4.5 V ID= 5A 3.2 VDS=20V,VGS=0V f=1MHz td(on) tr td(off) tf nC 2.8 850 pF 110 75 6 12 VDD=20V,RL=4Ω 10 20 ID≡5.0A,VGEN=10V 20 36 RG=1Ω 6 12 VER 1.1 nS 3 ACE4884 N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 4 ACE4884 N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 5 ACE4884 N-Channel Enhancement Mode MOSFET Packing Information SOP-8 VER 1.1 6 ACE4884 N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7