APTGF50X120TE3 3 Phase bridge NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • • 17 16 15 Benefits 20 14 21 13 1 2 3 4 5 6 7 8 9 10 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation SCSOA Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 11 12 Absolute maximum ratings Symbol VCES • • • • • • • Short Circuit Save Operating Area TC = 25°C Max ratings 1200 78 50 150 ±20 400 Tj = 125°C 500A@1200V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2003 18 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF50X120TE3 – Rev 0 19 APTGF50X120TE3 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tj = 25°C IF = 50A VGE = 0V Tj = 125°C IF = 50A VR = 600V Tj = 125°C di/dt =800A/µs IF = 50A Tj = 25°C VR = 600V di/dt =800A/µs Tj = 125°C Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K RT = Min 2.0 exp B25 / 50 1 1 − T25 T Max 0.8 4 2.5 3.1 1 4.5 Min Typ 3300 500 220 44 Typ 2.3 1.8 Max Unit V pF ns Max 2.8 200 Unit V ns 2.8 µC 8 Typ 5 3375 mA V nA 380 70 Min Unit V 3.0 3.7 6.5 200 56 Min R25 Typ 1200 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 22Ω Rise Time VF Test Conditions VGE = 0V, IC = 3mA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Max Unit kΩ K T: Thermistor temperature RT: Thermistor value at T APT website – http://www.advancedpower.com July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage 2-3 APTGF50X120TE3 – Rev 0 Electrical Characteristics APTGF50X120TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Min IGBT Diode Typ Max 0.35 0.7 2500 M5 -40 -40 -40 3 Unit °C/W V 150 125 125 4.5 300 °C N.m g Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGF50X120TE3 – Rev 0 July, 2003 PIN 21