AF9410N N-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 18 ID (A) 9.6 The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Pin Descriptions Pin Assignments S 1 8 D S 2 7 D S 3 6 D G 4 5 D Pin Name Description S G D Source Gate Drain SOP-8 Ordering information Feature F :MOSFET A X 9410N X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.3 Nov 19, 2004 1/5 AF9410N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ Rating 30 ±25 9.6 7.7 40 2.5 0.02 -55 to 150 -55 to 150 TA=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Maximum 50 Max. Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss RG Test Conditions Min. Typ. Max. Units 30 - - V - 0.04 - V/oC 1 - 13 18 28 3 - VDS=30V, VGS=0V - - 1 VDS=24V, VGS=0V - - 25 VGS=±25V ID=9A, VDS=20V, VGS=4.5V VDS=15V, ID=1A, RG=3.3Ω, VGS=10V RD=15Ω VGS=0V, VDS=25V, f=1.0MHz f=1.0MHz - 11 3 7 10 6 23 7 840 190 140 1.4 ±100 18 1350 - Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dl/dt=100A/µs Min. - Typ. 18 8 Max. 1.2 - VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=9A VGS=4.5V, ID=7A VDS=VGS, ID=250uA VDS=10V, ID=9A mΩ V S uA nA nC ns pF Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge 2 o Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board, t ≤ 10 sec; 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.3 2/5 Nov 19, 2004 AF9410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.3 3/5 Nov 19, 2004 AF9410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.3 4/5 Nov 19, 2004 AF9410N N-Channel Enhancement Mode Power MOSFET Marking Information SOP-8L ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 9410 N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information H E Package Type: SOP-8L L VIEW "A" D 0.015x45 C B A1 e 7 (4X) A A2 7 (4X) VIEW "A" y Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 8O 0O Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Rev. 1.3 5/5 Nov 19, 2004