MRF313 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. PACKAGE STYLE .200" 4L PILL FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC 150 mA VCBO 40 V VCEO 30 V VEBO 3.0 V PDISS 6.1 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 28.5 C/W O O O O O O CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 30 V BVCBO IC = 0.1 mA 35 V BVEBO IE = 1.0 mA 3.0 V ICEO VE = 20 V hFE VCE = 10 V COB VCB = 28 V PG ηC IC = 100 mA 20 f = 1.0 MHz 3.5 15 VCC = 28 V POUT = 1.0 W f = 400 MHz 16 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 150 --- 5.0 pF dB % REV. A 1/1