2SC2905 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2905 is designed for high power amplifier applications in UHF band. PACKAGE STYLE .500 6L FLG FEATURES: A C • Emitter Ballasted construction. • PG = 4.8 dB at 45 W/520 MHz • Omnigold™ Metalization System • Common Emitter 2x ØN FU LL R D B E .725/18,42 F G MAXIMUM RATINGS M K H IC 15 A VCBO J I L D IM M IN IM U M inche s / m m inche s / m m 35 V A .150 / 3.43 .160 / 4.06 VCEO 17 V C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 VCES 36 V VEBO 4.0 V PDISS .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 TSTG -55 °C to +175 °C θJC 1.0 °C/W .007 / 0.18 .125 / 3.18 .725 / 18.42 I -55 °C to +175 °C J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 TC = 25 °C NONETEST CONDITIONS SYMBOL E H TJ CHARACTERISTICS .045 / 1.14 B 120 W @ TC = 25°C M AX IM U M MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 A 17 BVCBO IC = 10 mA 35 BVEBO IE = 10 mA 4.0 ICBO VCB = 15 V 2.0 mA IEBO VCE = 3.0 V 3.0 mA hFE VCE = 10 V 200 --- Cob VCB = 12.5 V 150 pF PG ηC VCE = 12.5 V IC = 1.0 A V V 10 f = 1.0 MHz POUT = 45 W f = 520 MHz 4.8 60 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. A 1/1