MRF587 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. A 45° 1 2 B 3 4 FEATURES: C D • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure • Diffused Ballast Resistors • Omnigold™ Metalization System J E I F G H K MAXIMUM RATINGS #8-32 UNC MAXIMUM DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 IC 200 mA B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 VCBO 34 V D .003 / 0.08 .007 / 0.18 E .117 / 2.97 17 V F VEBO 2.5 V H PDISS 5.0 W @ TC = 25 °C J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 TJ -65 °C to +200 °C TSTG -65 °C to +150 °C VCEO CHARACTERISTICS .130 / 3.30 G .245 / 6.22 .255 / 6.48 .640 / 16.26 I Lead 1 = Collector 2 & 3 = Emitter 4 = Base TC = 25 °C NONETEST CONDITIONS SYMBOL .137 / 3.48 .572 / 14.53 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 34 V BVCEO IC = 5.0 mA 17 V BVEBO IE = 100 µA 2.5 V ICBO VCB = 10 V hFE VCE = 5.0 V Ccb VCB = 10 V GP ηC VCC = 15 V IC = 50 mA 50 f = 1.0 MHz 1.7 11 IC = 90 mA f = 0.3 GHz 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 50 µA 200 --- 2.2 pF dB % REV. A 1/1