HF20-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF20-12S is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. PACKAGE STYLE .380 4L STUD .112x45° A C FEATURES: B E E • PG = 15 dB min. at 20 W/30 MHz • IMD3 = -30 dBc max. at 20 W (PEP) • Omnigold™ Metalization System • Emitter Ballasting ØC B D H J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 4.5 A VCBO VCEO VEBO PDISS I MAXIMUM DIM MINIMUM inches / mm inches / mm 36 V A .220 / 5.59 .230 / 5.84 B .980 / 24.89 18 V C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 4.0 V E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 80 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.2 °C/W CHARACTERISTICS ORDER CODE: ASI10595 TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 50 mA 36 V BVCEO IC = 50 mA 18 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V GP IMD3 VCC = 12.5 V POUT = 20 W (PEP) IC = 1.0 A 10 f = 1.0 MHz ICQ =25 mA f = 30 MHz 5 mA 200 --pF 100 dB 15 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dBc REV. B 1/1