ASI MRF5812

MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
PACKAGE STYLE SO-8
DESCRIPTION:
The ASI MRF5812 is Designed for
high current, low power, low noise,
amplifiers up to 1.0 GHz.
FEATURES:
• Low Noise – 2.5 dB @ 500 MHz
• Ftau – 5.0 GHz @ 10 V, 75 mA
• Cost Effective SO-8 package
MAXIMUM RATINGS
IC
200 mA
VCBO
30 V
VCEO
15 V
VEBO
2.5 V
PDISS
1.25 W @ TC = 25 °C
CHARACTERISTICS
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
30
V
BVCEO
IC = 5.0 mA
15
V
BVEBO
IE = 0.1 mA
2.5
V
ICBO
VCB = 15 V
0.1
mA
IEBO
VCE = 2.0 V
0.1
mA
hFE
VCE = 5.0 V
200
---
COB
VCB = 10 V
2.0
pF
FTAU
VCE = 10 V
NFmin
GNF
GU max
MSG
2
|S21|
IC = 50 mA
IC = 75 mA
50
f = 1.0 MHz
1.4
f = 1.0 GHz
5.0
2.0
13
VCE = 10 V
IC = 50 mA
f = 500 MHz
15.5
17.8
20
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
GHz
3.0
dB
%
dB
dB
dB
REV. A
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