MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE SO-8 DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package MAXIMUM RATINGS IC 200 mA VCBO 30 V VCEO 15 V VEBO 2.5 V PDISS 1.25 W @ TC = 25 °C CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 30 V BVCEO IC = 5.0 mA 15 V BVEBO IE = 0.1 mA 2.5 V ICBO VCB = 15 V 0.1 mA IEBO VCE = 2.0 V 0.1 mA hFE VCE = 5.0 V 200 --- COB VCB = 10 V 2.0 pF FTAU VCE = 10 V NFmin GNF GU max MSG 2 |S21| IC = 50 mA IC = 75 mA 50 f = 1.0 MHz 1.4 f = 1.0 GHz 5.0 2.0 13 VCE = 10 V IC = 50 mA f = 500 MHz 15.5 17.8 20 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. GHz 3.0 dB % dB dB dB REV. A 1/1