140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Value 30 Unit Vdc VCBO VEBO Collector-Base Voltage 55 Vdc Emitter-Base Voltage 3.5 Vdc IC Collector Current 400 mA 5.0 28.6 Watts mW/ ºC Thermal Data P D Total Device Dissipation Derate above 25ºC MSC1067.PDF 3-10-99 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) 55 - - Vdc Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) 30 - - Vdc Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) 55 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc Collector Cutoff Current (VCE = 28 Vdc, IB = 0) - - 20 µA Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) - - 100 µA 5.0 10 25 - 200 200 - - - 1.0 Vdc (on) HFE VCE(sat) DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) DYNAMIC Symbol fT COB Test Conditions Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) MSC1067.PDF 3-10-99 Value 2N3866 2N3866A Min. Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF 2N3866 / 2N3866A FUNCTIONAL Symbol GPE Pout Test Conditions Power Gain Value Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Output Power Collector Efficiency ηC 8-60 L1 Typ. Max. Unit 10 - - dB 1.0 - - Watts 45 - - % LS POUT (RL=50 OHMS) RFC 8-60 PIN (R S=50 OHMS) Min. RFC 3-35 0.9-7 12 RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS. L1: 2 TURNS No. 18 wire, ¼” ID, 1/8” long Ls: 2 ¾ TURNS No. 18 wire, ¼” ID, 3/16” long Capacitor values in pF unless otherwise indicated. Tuning capacitors are air variable MSC1067.PDF 3-10-99 2N3866 / 2N3866A . TO-39 2N5109 NPN 200 3 10 15 12 1200 20 400 400 TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500 SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400 TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50 POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500 TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-39 2N6255 NPN 175 3 7.8 50 12.5 TO-72 2N5179 NPN 200 MA C R O X MRF559 NPN 512 10 65 18 1000 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30 12 50 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 NPN 500 1.9 2 5 5000 1 12 35 7.5 16 150 MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100 SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200 MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200 Macro BFR90 NPN 500 2.4 2 10 15 18 5000 15 30 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 MA C R O X MRF559 NPN 512 0.5 13 60 12.5 16 150 TO-39 2N3866A NPN 400 1 10 45 28 30 400 M R F 3 8 6 6 , R 1 , R 2 NPN 400 1 10 45 28 30 400 1.5 11 50 12.5 16 400 SO-8 POWER MACRO MRF555 NPN 470 POWER MACRO MRF555T NPN 470 1.5 11 50 MA C R O X MRF559 NPN 870 0.5 6.5 MA C R O X MRF559 NPN 870 0.5 9.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 POWER MACRO MRF557T NPN 870 12.5 16 400 70 7.5 16 150 65 12.5 16 150 8 55 12.5 16 200 1.5 8 55 12.5 16 400 1.5 8 55 12.5 16 400 BFR91 11 16.5 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200 TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200 17 MACRO X MRF951 NPN 1000 1.3 5 6 14 MACRO X MRF571 NPN 1000 1.5 10 6 10 MACRO T BFR91 NPN 1000 2.5 2 5 8 MACRO T BFR90 NPN 1000 3 2 10 10 TO-39 MRF545 PNP TO-39 MRF544 NPN 8000 0.45 10 100 8000 1 10 70 11 5000 1 12 35 12.5 5000 1 15 30 14 1400 2 70 400 13.5 1500 1 1 2 2 3 Macro T 8 5 1 4 3 Macro X 70 400 RF (LNA / General Purpose) Selection Guide 1 MSC1067.PDF 3-10-99 50 TO-72 Low Cost RF Plastic Package Options 2 1 MACRO X RF (Low Power PA / General Purpose) Selection 4 3.5 6 MACRO T 0.5 Type Device Packag Device GPE VCC 20 Ccb(pF) BVCEO IC max (mA) 400 20 Ftau (MHz) 20 12 Gu Max (dB) 12 50 Freq (MHz) NF (dB) NF IC (mA) NF VCE GNF (dB) 60 10 BVCEO 18 1 IC max (mA) 0.15 NPN 175 Efficiency (%) NPN 175 2N4427 GPE (dB) Pout MRF4427, R2 Type SO-8 TO-39 Package GPE Freq (MHz) RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Power SO-8 2N3866 / 2N3866A MSC1067.PDF 3-10-99