ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A 4x .062 x 45° The ASI SD1538-8 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 2xB C F E D G FEATURES INCLUDE: 2xR H J K I • Gold Metelization • InputMatching • Broad Band Performance L N P M M IN IMU M M AXIM U M in ch e s / m m in ch e s / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 D IM MAXIMUM RATINGS 11 A IC .040 x 45° .396 / 10.06 VCES 65 V PDISS 583 W @ TC = 25 °C H TJ -55 °C to +200 °C J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 TSTG -55 °C to +150 °C M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .193 / 4.90 G θJC CHARACTERISTICS .100 / 2.54 I 0.30 °C/W .510 / 12.95 .490 / 12.45 .230 / 5.84 P TC = 25°C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 25 mA 65 V BVCBO IC = 10 mA 65 V BVEBO IE = 5.0 mA 3.5 V ICEO VCE = 50 V hFE VCE = 5.0 V POUT GP VCC = 50 V PULSE WIDTH 10 IC = 300 mA PIN = 25 W = 10 µS f = 1025 to 1150 MHz = 1.0% DUTY CYCLE mA 5.0 --- 150 8.2 W dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1