TPV597 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV597 is designed for 1.0 W stage in Band V TV transposes amplifiers up to 860 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Emitter, 20 V operation • PG = 10.5 dB at 1.0 W/860 MHz • Omnigold™ Metalization System • Emitter Ballasting 45° C E B E B C D J MAXIMUM RATINGS E IC 1.4 A VCBO 45 V VCEO 24 V VEBO 3.5 V PDISS 19 W @ TC = 25 °C G H K TSTG θJC MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 G -65 °C to +200 °C I CHARACTERISTICS .137 / 3.48 .572 / 14.53 .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM B -65 °C to +200 °C 9.0 °C/W #8-32 UNC DIM F TJ I F BVCBO IC = 2.0 mA BVCER IC = 40 mA BVCEO MINIMUM TYPICAL MAXIMUM UNITS 45 V 50 V IC = 40 mA 24 V BVEBO IE = 0.5 mA 3.5 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG IMD1 VCE = 20 V f = 860 MHz RBE = 10 Ω IC = 200 mA 15 f = 1.0 MHz IE = 440 mA POUT = 1.0 W 10.5 11 -60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.2 mA 120 --- 7.0 pF -58 dB dB REV. A 1/1