PT9730 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9730 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 10 dB at 10W/175 MHz • Omnigold™ Metalization System A C B E E ØC B MAXIMUM RATINGS 1.0 A IC VCBO 60 V VCEO 35 V VCES 60 V H I J G #8-32 UNC-2A F E MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 4.0 V B .980 / 24.89 C .370 / 9.40 .385 / 9.78 10 W @ T = 25 °C D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 VEBO PDISS D O TJ -65 ° C to +200 °C TSTG -65 °C to +150 °C θJC 17.5 °C/W CHARACTERISTICS TC = 25°C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 60 V BVCES IC = 50 mA 60 V BVCEO IC = 100 mA 35 V BVEBO IE = 10 mA 4.0 V ICES VCE = 25 V hFE VCE = 10 V Cob VCB = 28 V PG ηC VCC = 28 V IC = 500 mA 20 f = 1.0 MHz POUT = 10 W f = 175 MHz 13 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 150 --- 12 pF dB % REV. B 1/1