Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. · Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V · High Voltage and Low Standby Power Circuit for BCD Solution TO-92(Ammo Packing) TO-92(Bulk Packing) Figure 1. Package Types of APT17 Pin Configuration N Package (SOT-23) Z Package (TO-92 (Bulk Packing)) (TO-92(Ammo Packing)) Collector 3 1 Base 2 3 Base 3 Base 2 Collector 2 Collector 1 Emitter 1 Emitter Emitter Figure 2. Pin Configurations of APT17 (Top View) Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Ordering Information APT17 G1: Green Circuit Type TR: Tape & Reel or Ammo Blank: Bulk Package N: SOT-23 Z: TO-92 Package SOT-23 TO-92 Part Number Marking ID Packing Type APT17NTR-G1 GD8 Tape & Reel APT17Z-G1 APT17Z-G1 Bulk APT17ZTR-G1 APT17Z-G1 Ammo BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Emitter Voltage (IB=0) VCEO 480 V Emitter-Base Voltage (IC=0) VEBO 10 V IC 50 mA ICM 100 mA IB 25 mA IBM 50 mA Collector Current Collector Peak Current (Pulse) Base Current Base Peak Current (Pulse) Power Dissipation, TA=25oC SOT-23 PTOT TO-92 Operating Junction Temperature 0.2 0.5 150 Storage Temperature Range -55 to 150 W o C oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Thermal Characteristics Parameter Symbol Value 625 SOT-23 Thermal Resistance (Junction-to-Ambient) Unit θJA TO-92 oC/W 250 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) DC Current Gain Symbol Conditions ICEV VCE=700V VCEO (sus) IC=300μA hFE Min Typ Max Unit 10 μA 480 V IC=100μA, VCE=20V 21 36.5 IC=500μA, VCE=20V 24.5 35.5 IC=10mA, VCE=20V 20 45.5 Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Typical Performance Characteristics 35 VCE=20V TJ=125 C 0 TJ=150 C Instantanous Reverse Current(μA) 0 0 TJ=25 C 25 DC Current Gain hFE 100 VCE=20V 30 20 15 10 5 0 1E-4 1E-3 0.01 10 0 TJ=125 C 1 0.1 0.01 0 TJ=25 C 1E-3 0.1 0 TJ=75 C 20 40 60 80 Figure 3. DC Current Gain 120 Figure 4. Typical Reverse Characteristics 1 0.1 Package: TO-92 Package: SOT-23 0.1 Collector Current Ic(A) Collector Current Ic(A) 100 Percent of Collector-Emitter Reverse voltage(%) Collector Current IC(A) 0.01 0.001 0.0001 1 10 100 0.01 0.001 0.0001 10 1000 100 1000 Collector-Emitter Clamp Voltage VCE(V) Collector-Emitter Clamp Voltage VCE(V) Figure 5. Safe Operating Areas Figure 6. Safe Operating Areas Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions SOT-23 Aug. 2011 Rev 1. 4 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions (Continued) TO-92(Bulk Packing) Unit: mm(inch) 1.000(0. 039) 3.430(0.135) MIN 3.700(0.146) 3.300(0.130) 1.400(0.055) 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015) Φ1. 600(0. 063) MAX 4.700(0.185) 1.270(0. 050) TYP 15.500(0.610) 0.360(0. 014) 0.760(0. 030) 12.500(0.492) 4.300(0.169) 4.400(0.173) 4.800(0.189) 2.420(0. 095) 2.660(0.105) Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions (Continued) TO-92(Ammo Packing) Unit: mm(inch) 4.700(0.185) 3. 430(0. 135) MIN 1.270(0. 050) Typ 2.500(0. 098) 4.000 (0.157 ) 0. 000(0.000) 0. 380(0. 015) Φ1.600(0. 063) MAX 14.500(0.571) 12.500(0.492) 0. 320(0. 013) 0. 510(0. 020) 3.800(0.150) 3.300(0.130) 1. 100(0. 043) 1. 400(0. 055) 4.300(0.169) 4.400(0. 173) 4.800 (0.189 ) 13.000(0. 512) 15.000 (0.591 ) 0.380(0.015) 0.550(0.022 ) 2.540(0. 100) Typ Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Soldering Information 2.90 2.50 S older Lands S older R esist 2.70 1.70 1.30 S older P aste O ccupied A rea 0.60 (3X ) D im ensions in m m 0.50(3X ) 0.60 (3X ) 1.0 3.30 Figure 7. Reflow Soldering Footprint SOT-23 Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Soldering Information(Continued) S older Lands S older R esist O ccupied A rea 4.00 1.20 D im ensions in m m P referred transport direction during soldering 2.80 4.50 Figure 8. Waving Soldering Footprint SOT-23 Aug. 2011 Rev 1. 4 BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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