Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003S series are high voltage, high speed switching transistors specially designed for off-line switch mode power supplies with low output power. · · · · The APT13003S series are available in TO-92 and TO126 packages. APT13003S High Switching Speed High Collector-Emitter Voltage Low Cost Bulk and Ammo Packing TO-92 Package and TO-126 Package Applications · · TO-92 (Bulk Packing) Battery Chargers for Mobile Phone Standby Power Supply TO-92 (Ammo Packing) TO-126 Figure 1. Package Types of APT13003S Pin Configuration Z Package (TO-92(Bulk Packing)) Base 3 Base 2 Collector 2 Collector 1 Emitter 1 Emitter 3 U Package (TO-126) Z Package (TO-92(Ammo Packing)) (Top View) 3 Emitter 2 Collector 1 Base (Front View) Figure 2. Pin Configurations of APT13003S Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S Ordering Information APT13003 E1: Lead Free G1: Green TR: Ammo Blank: Bulk Package Z: TO-92 U: TO-126 Circuit Type S: APT13003S Part Number Package Lead Free Green Lead Free APT13003SZ-G1 TO-92 TO-126 Marking ID APT13003SZTR-G1 APT13003SU-E1 APT13003SU-G1 EU13003S Green Packing Type 13003SZ-G1 Bulk 13003SZ-G1 Ammo GU13003S Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Emitter Voltage (IB=0) VCEO 450 V Emitter-Base Voltage (IC=0) VEBO 9 V IC 1.3 A ICM 2.6 A IB 0.65 A IBM 1.3 A Collector Current Collector Peak Current (Pulse) (Note 2) Base Current Base Peak Current (Pulse) (Note 2) Power Dissipation, TA=25oC For TO-92 PTOT 1.1 W Power Dissipation, TC=25oC For TO-126 PTOT 20 W TJ 150 o TSTG -55 to 150 o Operating Junction Temperature Storage Temperature Range C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%. Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S Thermal Characteristics Parameter Symbol For TO-92 Thermal Resistance (Junction-to-Case) For TO-92 oC/W 6.25 113.6 θJA For TO-126 Unit 83.3 θJC For TO-126 Thermal Resistance (Junction-to-Ambient) Value oC/W 96 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Symbol Conditions ICEV VCE=700V Collector-Emitter Sustaining Voltage VCEO (sus) IC=100μA Collector-Emitter Saturation Voltage (Note 3) VCE (sat) Base-Emitter Saturation Voltage (Note 3) VBE (sat) DC Current Gain (Note 3) hFE Current Gain Bandwidth Product fT Turn-on Time with Resistive Load ton Storage Time with Resistive Load ts Fall Time with Resistive Load tf Min Typ Max Unit 10 μA 450 V IC=0.5A, IB=0.1A 0.3 IC=1.0A, IB=0.25A 0.6 IC=0.5A, IB=0.1A 1.0 IC=1.0A, IB=0.25A 1.2 IC=0.5A, VCE=2V 13 30 IC=1.0A, VCE=2V 5 25 VCE=10V, IC=0.1A 4 IC=1A, VCC=125V, IB1=0.2A, IB2=-0.2A, TP=25μS V V MHz 1.0 3.0 μs 0.5 Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S 10 10 1 1 Collector Current IC(A) Collector Current IC (A) Typical Performance Characteristics 0.1 DC 0.01 1E-3 1 10 100 1000 DC 0.1 0.01 1E-3 1 10 Collector-Emitter Clamp Voltage V CE (V) 100 1000 Collector-Emitter clamp Voltage VCE(V) Figure 3. Safe Operating Areas (TO-92 Package) Figure 4. Safe Operating Areas (TO-126 Package) 2.0 125 1.8 Α Α Α Α Α Α Α Α Α Α Α Α Collector Current IC(A) Power Derating Factor(%) Α 50 25 1.4 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 1.2 IB=200mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=250mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=300mA Α Α Α Α Α Α Α Α Α Α Α Α 75 IB=350mA Α Α Α Α 1.6 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 100 IB=400mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=150mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 1.0 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=100mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α ΑΑ Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 0.8 Α Α Α Α Α Α Α Α Α Α Α Α Α Α ΑΑ Α Α Α Α Α Α 0.6 Α Α Α Α ΑΑ Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α IB=50mA Α Α Α Α Α Α Α Α Α Α Α Α Α Α ΑΑ Α Α Α Α Α Α 0.4 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 0.2 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 0 0 Α Α Α Α Α 0.0 0 Α Α Α 25 50 75 100 125 150 175 Α Α 200 Α Α 1 2 3 4 5 6 7 Collector-Emitter Voltage VCE(V) o Case Temperature( C) Figure 5. Power Derating Curve Figure 6. Static Characteristics Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S Typical Performance Characteristics (Continued) 10 40 35 VCE=2V o o TJ=125 C Collector-Emitter Voltage VCE(V) TJ=125 C DC Current Gain 30 25 20 o TJ=25 C 15 10 5 1 o TJ=25 C 0.1 hFE=5 0 0.01 0.1 1 0.01 0.1 10 1 10 Collector Current IC(A) Collector Current IC(A) Figure 7. DC Current Gain Figure 8. Collector-Emitter Saturation Voltage 1.2 1.1 Base-Emitter Voltage VBE(V) o TJ=25 C 1.0 0.9 o TJ=125 C 0.8 0.7 0.6 hFE=5 0.5 0.1 1 10 Collector Current IC(A) Figure 9. Base-Emitter Saturation Voltage Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S Mechanical Dimensions TO-92 (Bulk Packing) Unit: mm(inch) 1.000(0. 039) 3.430(0.135) MIN 3.700(0.146) 3.300(0.130) 1.400(0.055) 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015) Φ1. 600(0. 063) MAX 4.700(0.185) 1.270(0. 050) TYP 15.500(0.610) 0.360(0. 014) 0.760(0. 030) 12.500(0.492) 4.300(0.169) 4.400(0.173) 4.800(0.189) 2.420(0. 095) 2.660(0.105) Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch) 1. 100(0. 043) 3. 430(0.135) MIN 1.270(0.050) Typ 2.500(0.098) 4.000 (0.157 ) 0. 000(0.000) 0. 380(0.015) Φ1. 600(0. 063) MAX 14.500(0.571) 12.500(0.492) 0.320(0. 013) 0. 510(0. 020) 3.800(0.150) 3.300(0.130) 1. 400(0.055) 4.700(0.185) 4.300(0.169) 4.400(0.173) 4.800 (0.189 ) 13.000(0. 512) 15.000 (0.591 ) 0.380(0.015) 0.550(0.022 ) 2.540(0.100) Typ Aug. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S Mechanical Dimensions (Continued) ٛφ 3.100(0.122) 0.000(0.000) 0.300(0.012) 2.400(0.094) 2.900(0.114) 1.060(0.042) 1.500(0.059) 3.900(0.154) 7.400(0.291) 8.200(0.323) 10.600(0.417) 11.200(0.440) Unit: mm(inch) 3.600(0.142) TO-126 3.550(0.140) 1.170(0.046) 1.470(0.058) 2.100(0.083) 1.700(0.067) 14.500(0.570) 15.900(0.626) 0.660(0.026) 4.560(0.180) TYP. 0.860(0.034) 2.280(0.090) TYP Aug. 2011 Rev. 1. 2 0.400(0.016) 0.600(0.024) BCD Semiconductor Manufacturing Limited 8 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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