Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Main Product Characteristics General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF (AV) 2×5A VRRM 60V TJ 150oC VF (max) 0.65V MBR1060C is available in TO-220-3, TO-220-3 (2) and TO-220F-3 packages. Mechanical Characteristics Features · · · · · · · · High Surge Capacity 150oC Operating Junction Temperature 10A Total (5A Each Diode Leg) Guard-ring for Stress Protection Pb-free Package · · · Applications · · · Power Supply Output Rectification Power Management Instrumentation TO-220F-3 Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 1.9 Grams (TO-220-3, TO-220-3 (2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR1060C Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Pin Configuration T Package (TO-220-3 (2)) (TO-220-3) (Optional) 3 A2 3 A2 2 K 2 K 1 A1 1 A1 TF Package (TO-220F-3) 3 A2 2 K 1 A1 Figure 2. Pin Configuration of MBR1060C (Top View) A1 K A2 Figure 3. Internal Structure of MBR1060C Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Ordering Information MBR1060C Circuit Type E1: Lead Free G1: Green Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube Part Number Package Lead Free TO-220-3 (2) MBR1060CT-E1 TO-220F-3 - MBR1060CTF-E1 Marking ID Green Lead Free Green Packing Type MBR1060CT-G1 MBR1060CT-E1 MBR1060CT-G1 Tube MBR1060CTF-G1 MBR1060CTF-E1 MBR1060CTF-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC=140oC IF (AV) 5 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=139oC IFRM 10 A Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) IFSM 100 A TJ 150 o Storage Temperature Range TSTG -55 to 150 oC Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Operating Junction Temperature (Note 2) C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ<1/θJA. Thermal Characteristics Parameter Symbol θJC Condition Junction to Case Maximum Thermal Resistance θJA Junction to Ambient Mar. 2011 Rev. 1. 3 Value TO-220-3/ TO-220-3 (2) 3.0 TO-220F-3 3.5 TO-220-3/ TO-220-3 (2) 60 TO-220F-3 60 Unit o C/W BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Electrical Characteristics (Each Diode Leg) Parameter Maximum Instantaneous Voltage Drop (Note 3) Symbol Forward Maximum Instantaneous Reverse Current (Note 3) VF IR Condition Value IF=5A, TC=25oC 0.75 IF=5A, TC=125oC 0.65 IF=10A, TC=25oC 0.90 IF=10A, TC=125oC 0.80 Rated DC Voltage, TC=25oC 0.1 Rated DC Voltage, TC=125oC 15.0 Unit V mA Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Typical Performance Characteristics IF, Instantaneous Forward Current (A) 100 10 1 0.1 o 25 C 125oC o 150 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage Per Diode 100000 IR, Reverse Current (µA) 10000 1000 o 25 C 100 o 125 C o 150 C 10 1 0.1 0 10 20 30 40 50 60 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Per Diode Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Typical Performance Characteristics (Continued) 10 Average Forward Current (A) 9 8 7 6 5 4 3 2 1 0 100 105 110 115 120 125 130 135 140 145 150 155 160 o Case Temperature ( C) Figure 6. Average Forward Current vs. Case Temperature (Per Diode) Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 14.230(0.560) 16.510(0.650) φ1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 9.660(0.380) 10.660(0.420) φ3.560(0.140) 4.060(0.160) 3° 0.200(0.008) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 3 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) ∅ ∅3.560(0.140) 3.640(0.143) 0.600(0.024) REF 11.100(0.437) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 6.300(0.248) 6.700(0.264) 1.620(0.064) 1.820(0.072) 9.000(0.354) 9.400(0.370) 3° 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3° 0.700(0.028) 0.900(0.035) 2.540(0.100) REF 12.600(0.496) 13.600(0.535) 1.170(0.046) 1.390(0.055) 9.600(0.378) 10.600(0.417) 3.000(0.118) REF 3° 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) ٛ 3.000(0.119) ∅ 3.550(0.140) Unit: mm(inch) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 3 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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