CHENMKO ENTERPRISE CO.,LTD CH411N1PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.5 Ampere APPLICATION * Low power rectification FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * Low VF. (VF=0.43V Typ. at 0.5A) * High reliability 0.5±0.05 1.0±0.05 0.37(REF.) 1.0±0.05 CONSTRUCTION 0.25(REF.) * Silicon epitaxial planar 0.05±0.04 0.68±0.05 0.42±0.05 CIRCUIT (1) (2) 0.3±0.05 0.26±0.05 Dimensions in millimeters (3) FBPT-923 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL CH411N1PT UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 40 Volts Maximum RMS Voltage VRMS 28 Volts Maximum DC Blocking Voltage VDC 20 Volts IO 0.5 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave IFSM 3.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 20 pF Maximum Operating Temperature Range TJ +125 o C TSTG -40 to +125 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL CH411N1PT UNITS Maximum Instantaneous Forward Voltage at IF(1)= 10mA VF(1) 0.30 Volts Maximum Instantaneous Forward Voltage at IF(2)= 500mA VF(2) 0.50 Volts IR 30 Maximum Average Reverse Current at VR= 10V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. uAmps 2006-07 RATING CHARACTERISTIC CURVES ( CH411N1PT ) FIG. 1 - FORWARD CHARACTERISTICS FIG. 2 - REVERSE CHARACTERISTICS 1 10m FORWARD CURRENT, (A) o Ta=125 C Typ. pulse measurement -25 o C 10m REVERSE CURRENT, (A) Ta =1 25 o 75 o C C 25 o C 100m 1m 100u o 75 C 100u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V) 1000 100 10 1 5 10 15 REVERSE VOLTAGE, (V) Typ. pulse measurement 1u 0 5 10 15 20 25 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 0 o 25 C 10u 0.1u 10u JUNCTION CAPACITANCE , (pF) 1m 20 25 30 35