CHENMKO ENTERPRISE CO.,LTD CH751H-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * High speed switching for detection SC-76/SOD-323 FEATURE * Small surface mounting type. (SC-76/SOD-323) * Low VF and low IR * High reliability Cathode Band (1) (2) 0.25~0.4 1.15~1.4 CONSTRUCTION 1.6~1.8 * Silicon epitaxial planar MARKING * JV 0.6~1.0 0.08~0.177 0.25~0.45 0.1Max. CIRCUIT 2.3~2.7 (2) Dimensions in millimeters (1) SC-76/SOD-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL CH751H-40PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 40 Volts Maximum RMS Voltage VRMS 28 Volts Maximum DC Blocking Voltage VDC 40 Volts IO 0.03 Amps IFSM 0.2 Amps pF RATINGS Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 Maximum Operating Temperature Range TJ +125 o C TSTG -40 to +125 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL CH751H-40PT UNITS Maximum Instantaneous Forward Voltage at IF= 1mA CHARACTERISTICS VF 0.37 Volts Maximum Average Reverse Current at VR= 30V IR 0.5 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. ESD sensitive product handling required. 2001-6 RATING CHARACTERISTIC CURVES ( CH751H-40PT ) FIG. 2 - REVERSE CHARACTERISTICS FIG. 1 - FORWARD CHARACTERISTICS 1000m 100u REVERSE CURRENT, (A) 5 o C 10m 75oC =1 2 1m Ta FORWARD CURRENT, (A) 100m 25oC 100u -25oC 10u 10u 75oC 1u 25oC 100n - 25oC 10n Typ. pulse measurement 1n 1u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) 100 Ta = 25oC f = 1MHz 50 20 10 5 2 1 0 2 4 6 8 10 REVERSE VOLTAGE, (V) 0 5 10 15 20 25 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) Ta =125oC Typ. pulse measurement 12 14 30 35