CHENMKO ENTERPRISE CO.,LTD CH751VDWPT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 30 mAmpere APPLICATION * High speed switching for detection SOT-563 FEATURE * Small surface mounting type. (SOT-563) * Low VF and low IR * High reliability (1) (5) 0.50 0.9~1.1 1.5~1.7 0.50 CONSTRUCTION 0.15~0.3 * Silicon epitaxial planar (4) (3) 1.1~1.3 MARKING * JV 0.5~0.6 0.09~0.18 6 CIRCUIT 4 1.5~1.7 1 3 Dimensions in millimeters SOT-563 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL CH751VDWPT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 40 Volts Maximum RMS Voltage VRMS 28 Volts Maximum DC Blocking Voltage VDC 40 Volts IO 30 mAmps IFSM 0.2 Amps pF RATINGS Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) CJ 2.0 Maximum Operating Temperature Range TJ +125 o C TSTG -40 to +125 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL CH751VDWPT UNITS Maximum Instantaneous Forward Voltage at IF= 1mA CHARACTERISTICS VF 0.37 Volts Maximum Average Reverse Current at VR= 30V IR 0.5 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. ESD sensitive product handling required. 2007-3 RATING CHARACTERISTIC CURVES ( CH751VDWPT ) FIG. 2 - REVERSE CHARACTERISTICS FIG. 1 - FORWARD CHARACTERISTICS 1000m 100u REVERSE CURRENT, (A) 5 o C 10m 75oC =1 2 1m Ta FORWARD CURRENT, (A) 100m 25oC 100u -25oC 10u 10u 75oC 1u 25oC 100n - 25oC 10n Typ. pulse measurement 1n 1u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) 100 Ta = 25oC f = 1MHz 50 20 10 5 2 1 0 2 4 6 8 10 REVERSE VOLTAGE, (V) 0 5 10 15 20 25 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) Ta =125oC Typ. pulse measurement 12 14 30 35