COMCHIP 1N4148-G

Switching Diode
1N4148-G
Voltage: 100V
Current: 0.15A
RoHS Device
DO-35
Features
-Surge overload ratings to 2 amperes peak.
1.02(26.00) Min.
-Ideal for printed circuit board.
Mechanical data
0.165(4.20) Max.
-Case: Glass, DO-35
0.079(2.00) Max.
-Lead: Axial leads,solderable per MIL-STD-202,
Method 208 guaranteed.
Terminal:Pure
tin plated lead free.
-Polarity:Indicated by cathode band.
-Mounting Position: Any
-Weight: 0.13gram
1.02(26.00) Min.
ø 0.02(0.52)Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Symbol
Value
Unit
Maximum Repetitive Peak Voltage
VRRM
100
V
Maximum RMS Voltage
VRMS
75
V
Forward Repetitive Peak Current
IFSM
500
mA
Maximum Average Forward Current
IF(AV)
150
mA
Peak Forward Surge Current tp=1uS
IFSN
2.0
A
Typical Resistance Junction to Amvient Air
(Note 1)
RΘJA
350
K/W
Operating and Storage Temperature Rang
TJ,TSTG
-65 to +200
°C
Parameter
Symbol
Min
Typ.
Max
Unit
Forward Voltage at IF = 10 mA
VF
–
–
1
V
Leakage Current
at VR= 20 V
at VR= 75 V
at VR= 20 V,TJ = 150°C
IR
IR
IR
–
–
25
5
50
nA
uA
uA
Reverse Recovery Time( Note 2)
Trr
–
–
4.
ns
Parameter
NTOES:
(1) Thermal Resistance Junction to Ambient Air.
(2) Reverse Recovery Test Conditions: IF=10mA,VR=6V,Irr=0.1 X IR,RL=100Ω.
REV:A
Page 1
QW-B0050
Comchip Technology CO., LTD.
Switching Diode
RATING AND CHARACTERISTIC CURVES (1N4148-G)
Fig.1 - Maximum Forward Current
Derating Curve
Fig.2 - Maximum Non-Repetitive Forward
Surge Current Per Bridge Elelment
3.5
Peak Forward Surge Current, (A)
Average Forward Current, (mA)
250
200
150
100
50
0
8.3ms Single Half Sine Wave
JEDEC Method
3.0
2.5
2.0
1.5
1.0
0.5
0
0
100
1
200
10
Ambient Temperature, (°C)
Number of Cycles at 60 Hz
Fig.4 - Typical Reverse Characteristics
Per Bridge Element
1000
Instantaneous Reverse Current, (uA)
Instantaneoys Forward Current, (mA)
Fig.3 - Typical Instantaneous Forward
Characteristics Per Bridge Element
100
T J =150 °C
10
T J =25 °C
1.0
0.1
0.3
0.5
0.7
0.9
100
1.1
1.3
Instantaneous Forward Voltage, (V)
100
T J =150 °C
10
T J =100°C
1.0
0.1
T J =25°C
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
Fig.5 - Reverse Recover Time Characteristics and Test Circuit Diagarm
trr
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
0
( )
(+)
50Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
|
|
|
|
|
|
|
|
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time= 7ns max. Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max. Source Impedance= 50 ohms.
1cm
SET TIME BASE FOR
50 / 10ns / cm
REV:A
Page 2
QW-B0050
Comchip Technology CO., LTD.
Switching Diode
Taping Specification For Axial Lead Diodes
E
90℃±5℃
Z
A
L1
B
L2
T
E
DO-35
SYMBOL
A
B
Z
T
E
(mm)
5.00 ± 0.5
52.0 ± 1.5
1.2 (max)
6.0 ± 0.4
0.8 (max)
1.0 (max)
(inch)
0.197± 0.020
2.047 ± 0.020
0.047 (max)
0.236 ± 0.016
0.032(max)
0.040 (max)
L1-L2
Marking Code
Part Number
Marking Code
1N4148-G
1N4148
1N
41
48
Standard Packaging
AMMO PACK
Case Type
DO-35
BOX
CARTON
( pcs )
( pcs )
5,000
100,000
REV:A
Page 3
QW-B0050
Comchip Technology CO., LTD.