SMD Switching Diode CDST4448-G - High Speed RoHS Device + Features SOT-23 -Fast switching diode. 0.119 (3.00) 0.110 (2.80) -Surface mount package ideally suited for automatic insertion. 3 -For general purpose switching applications. 0.056 (1.40) 0.047 (1.20) -High conductance. 1 2 0.083 (2.10) 0.066 (1.70) Mechanical data 0.103 (2.60) 0.086 (2.20) 0.044 (1.10) 0.035 (0.90) -Case: SOT-23 -Terminals: Solder plated, solderable per MILSTD-750, Method 2026. 0.006 (0.15) 0.002 (0.05) 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 0.007 (0.20) min -Weight: 0.008 gram. -Marking: KA3 Dimensions in inches and (millimeters) Maximum Rating (at Ta=25°C unless otherwise noted) Symbol Limits Unit Non-Repetitive peak reverse voltage VRM 100 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 75 V VR(RMS) 53 V Forward continuous current IFM 500 mA Average rectified output current IO 250 mA IFSM 4.0 2.0 A PD 350 Parameter RMS reverse voltage Peak forward surge current @1μS @1.0S Power dissipation mW Thermal resistance-Junction to ambient air RθJA 357 Storage temperature range TSTG -65 ~ +150 O C/W O C Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Symbol Test Conditions Min Max Unit 0.62 0.72 0.855 1.0 1.25 V 2.5 25 μA nA Forward voltage VF1 VF2 VF3 VF4 IF1=5mA IF2=10mA IF3=100mA IF4=150mA Reverse current IR1 IR2 VR1=75V VR2=20V Capacitance between terminals CT VR=0V, f=1MHz 4 pF Reverse recovery time trr IF=IR=10mA, Irr=0.1IR, RL=100Ω 4 nS REV:A QW-B0022 Page 1 SMD Switching Diode Characteristic Curves (CDST4448-G) Fig.1 - Forward Characteristics 1000 Fig.2 - Leakage Current vs Junction Temperature 10000 O IR, Leakage Current (nA) IF, Forward Current (mA) TJ=25 C 100 10 1 0.1 1000 100 10 VR=20V 0.01 1 0 1 2 VF, Instananeous Forward Voltage (V) 0 100 TJ, Junction Temperature (°C) 200 REV:A QW-B0022 Page 2