COMCHIP CSFC301-G_12

SMD Super Fast Recovery Rectifiers
CSFC301-G Thru. CSFC305-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 3.0 Amp
RoHS Device
Features
DO-214AB (SMC)
-Ideal for surface mount applications.
-Easy pick and place.
0.280(7.11)
0.260(6.60)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.245(6.22)
0.220(5.59)
0.124(3.15)
0.108(2.75)
-Super fast recovery time 35nS.
-Built-in strain relief.
-Low forward voltage drop.
0.320(8.13)
0.305(7.75)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
0.012(0.31)
0.006(0.15)
0.103(2.62)
0.079(2.00)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.050(1.27)
0.030(0.76)
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CSFC301-G CSFC302-G CSFC303-G CSFC304-G CSFC305-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Max. DC blocking voltage
VDC
50
100
200
400
600
V
Max. RMS voltage
VRMS
35
70
140
280
420
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
100
A
Max. average forward current
IO
3.0
A
Max. instantaneous forward voltage at
3.0A
VF
Reverse recovery time
Trr
Max. DC reverse current at TA=25
rated DC blocking voltage TA=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
0.95
1.25
35
1.3
V
50
nS
IR
5.0
250
RθJL
16
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper2 pad area.
REV:A
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QW-BS003
Comchip Technology CO., LTD.
SMD Super Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CSFC301-G thru CSFC305-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
100
CSFC301-G~303-G
TJ=125 OC
10
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
100
TJ=75 OC
10
CSFC304-G
1
CSFC305-G
0.1
1
TJ=25 OC
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.1
0.01
0
20
40
60
80
100
120
0.4
140
0.6
0.8
1.0
1.4
1.2
1.6
1.8
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
100
200
Peak F or ward Surge C ur re nt A
( )
O
J u n c ti o n C apacian
t ce(p F )
80
60
40
20
O
TJ=25 C
f=1MHz
Vsig=50mVp-p
TJ=25 C
8.3ms single half sine
wave, JEDEC method
100
10
0
0.1
1
10
100
1000
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
3.5
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
3.0
2.5
2.0
1.5
Single phase
Half wave 60Hz
1.0
0.5
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
REV:A
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QW-BS003
Comchip Technology CO., LTD.