SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw CEFA101 Thru CEFA105 Reverse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features DO-214AC (SMA) Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop 0.067(1.70) 0.051(1.29) 0.110(2.79) 0.086(2.18) 0.180(4.57) 0.160(4.06) 0.012(0.31) 0.006(0.15) Mechanical Data 0.091(2.31) 0.067(1.70) Case: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.063 gram 0.059(1.50) 0.035(0.89) 0.209(5.31) 0.185(4.70) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics Parameter Symbol CEFA 101 CEFA 102 CEFA 103 CEFA 104 CEFA 105 Unit Max. Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 V Max. DC Blocking Voltage V DC 50 100 200 400 600 V V RMS 35 70 140 280 420 V Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) I FSM Max. Average Forward Current Io Max. Instantaneous Forward Current at 1.0 A VF Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 30 A 1.0 A 0.875 25 1.25 35 50 V nS 5.0 250 uA 25 C/W C Max. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 Storage Temperature T STG -55 to +150 JL 1.1 C Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. MDS0210003B Page 1 SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CEFA101 Thru CEFA105) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 100 10 Tj=125 C Forward current ( A ) Reverse Current ( uA ) CEFA101-103 10 Tj=75 C 1.0 Tj=25 C 0.1 CEFA104 1.0 0.1 CEFA105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0. 01 0 0.001 15 30 45 60 75 90 105 120 135 150 0 0.2 0.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Non Repetitive Forward Surge Current f=1MHz and applied 4VDC reverse voltage Junction Capacitance (pF) Tj=25 C 25 20 CEFA101-103 15 10 50 Peak Surge Forward Current ( A ) 35 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 CEFA104-105 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 5 0 0 0.01 0.1 1.0 10 100 1 Reverse Voltage (V) 5 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.8 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 2.4 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0210003B Page 2