DAESAN SFP162

CURRENT 16.0 Amperes
VOLTAGE 50 to 600 Volts
SFP161 THRU SFP167
Features
· Low forward voltage drop
· High current capability
· High reliability
· High surge current capability
· Super fast recovery time
· Good for use in switching mode circuits
· Plastic package has Underwrites Laboratory Flammability
Classification 94V-0
ITO-220
2.54
· Case : JEDEC ITO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
0.7
2.54
0.2
PIN 1
PIN 3
Positive CT
Suffix "C"
4.5 0.2
15 0.3
2.7 0.2
13Min
2.7 0.2
3.7 0. 2
1.3 0.2
Mechanical Data
0.2
0.1
3.2
6.4 0.1
10 0.5
0.2
0.5
2.4
0.2
0.2
0.2
PIN 1
+
CASE
PIN 2
PIN 3
Negative CT
Suffix "A"
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SFP161 SFP162 SFP163 SFP164 SFP165 SFP166 SFP167
Units
Maximum recurrent peak reverse voltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS voltage
VRMS
35
70
105
140
210
280
420
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
600
Volts
Maximum average forward rectified current
at TC=100℃
I(AV)
16.0
Amps
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
80
Amps
Maximum instantaneous forward voltage
at 8.0A
VF
Maximum DC reverse
current at rated DC
blocking voltage
IR
TA=25℃
1.30
0.975
1.70
10
TA=100℃
Volts
μA
400
Maximum reverse recovery time (Note 1)
Trr
Typical junction capacitance (Note 2)
CJ
Typical thermal resistance (Note 3)
RθJC
Operating junction and storage
temperature range
TJ
TSTG
Notes:
(1) Test conditions: IF=0.5A, IR=1.0A, Irr=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
(3) Thermal resistance from junction to case mounting on heatsink.
ns
35
60
80
2.5
-55 to +150
-55 to +150
pF
℃/W
℃
RATINGS AND CHARACTERISTIC CURVES SFP161 THRU SFP167
FIG . 1 -REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
10
50
NONINDUCTIVE
NONINDUCTIVE
+0.5A
DUT
(+ )
50Vdc
(approx)
(-)
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
(NOTE 2 )
NONINDUCTIVE
SET TIME BASE FOR
5/ 10ns / cm
A)
8
4
0
50
100
CASE TEMPERATURE . ( % )
150
FIG . 4 -MAXIMUM NON - REPETITIVE FORWARD SURGE CURRENT
TJ=25 C
O
120
8.3ms Single Half Sine
Wave JEDEC Method
90
INSTANTA NEOUS REVERSE CURRET . (
12
0
FIG . 3 -TYPICAL REVERSE CHARACTERISTICS
.
FIG 2 -MAXIMUM AVERAGE FORWARD CURRENT DERATING
16
1000
100
TC=100 C
O
10
1.0
TC=25 C
O
0.1
0
30
1
2
5
10
20
NMBER OF CYCLES AT 60Hz
FIG . 5 -TYPICAL JUNCTIOON CAPACITANCE
TJ=25O C
90
80
70
S
FP
-S
16
SF
P
1
16
60
1
-S
FP
16
FP
1 00
100
4
7
2
5
10
20
50
100
REVERSE VOLTAGE . ( V)
200
500
40
60
80
100
120
FIG . 6 -TYPICAL FRWARD CHARACTERISTICS
30
10
S
3.0
16
FP
1-
6
P1
SF
4
SF
P1
P1
1.0
SF
65
-S F
P1
66
67
0.3
0.1
TJ=25oC
Pulse Width=300
1% Duty Cycle
.03
16
50
1
50
20
PERCENT OF RATED PEAK REVERSE VOLTAGE . (%)
60
100
CAPACITANCE ( pF)
-1.0A
INSTANTANEOUS FORWARD CURRENT . ( A)
PEAK FORWARD SURGE CURRENT . ( A )
AVERAGE FORWARD CURRENT . ( A )
NOTES: 1 . RISE TIME = 7nsmax. INPUT
IMPEDANCE= 1 MEGOHM 22p
2 . RISETIME = 10ns max. SOURSE
IMPEDANCE = 50ohmsf
20
0
-0.25A
.01
.4
.6
.8
1.0 1.2
1.4 1.6
FORWARD VOLTAGE . ( V )
s
1.8