ELM-TECH ELM7SH86XB

HIGH SPEED CMOS LOGIC IC
ELM7SH86xB 2-input Exclusive OR gate
■General description　ELM7SH86xB is CMOS 2-input EXOR gate which is suitable for battery-operated devices because of its
low voltage and ultra high speed operation. The low power consumption contributes to longer battery life,
which allows long time operation of devices. The internal circuit which provides high noise immunity and
stable output is composed of 3 stages, including buffered output.
■Features
・ Same electrical characteristic and high speed operation as 74VHC series
・ Low consumption current
： Idd=1.0μA(Max.)(Top=25℃ )
・ Wide power voltage range
： 2.0V～5.5V
・ Wide input voltage range
: Vih=5.5V(Max.)(Vdd=0～5.5V)
・ High speed
： Tpd=2ns(Typ.) (Vdd=5.0V)
・ Small package
: SOT-25, SSOT-25(SC-88A)
・ Same function and pin configuration as ELM7SxxB
■Application
・ Cell phones
・ Digital cameras
・ Portable electrical appliances like PDA, etc.
・ Computers and peripherals
・ Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
・ Modification inside print board, adjustment of timing, solution to noise
・ Power voltage change from 5V to 3V
■Selection guide
ELM7SH86xB-EL
Symbol
a
Function
b
Package
c
d
Product version
Taping direction
86 : 2-input Exclusive OR gate
M : SOT-25
T : SSOT-25(SC-88A)
B
EL : Refer to PKG file
ELM7SH 8 6 x B - EL
↑ ↑↑ ↑
a b c
d
■Maximum absolute ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Input protection diode current
Output parasitic diode current
Output current
VDD/GND current
Power dissipation
Storage temperature
Symbol
Vdd
Vin
Vout
Iik
Iok
Iout
Idd, Ignd
Pd
Tstg
Limit
-0.5～+6.0
-0.5～+6.0
-0.5～Vdd+0.5
-20
±20
±25
±50
150
-65～+150
1
Unit
V
V
V
mA
mA
mA
mA
mW
℃
HIGH SPEED CMOS LOGIC IC
ELM7SH86xB
2-input Exclusive OR gate
■Suggested operating condition
Parameter
Power voltage
Input voltage
Output voltage
Operating temperature
Symbol
Vdd
Vin
Vout
Top
High-input down-time
tr, tf
Limit
2.0～5.5
0～5.5
0～Vdd
-40～+85
Vdd=3.3±0.3V
Vdd=5.0±0.5V
Unit
V
V
V
℃
0～200
0～100
ns
■Pin configuration
TOP VIEW
Pin No.
1
2
3
4
5
Pin name
INB
INA
GND
OUTX
VDD
Input
INA
Low
Low
High
High
INB
Low
High
Low
High
Output
OUTX
Low
High
High
Low
■DC electrical characteristics
Parameter
Sym.
Vih
Input voltage
Vil
Voh
Output voltage
Vol
Input current
Static current
Iin
Idd
Vdd
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
Min.
1.50
2.10
3.85
Top=25℃
Typ.
Max.
0.50
0.90
1.65
1.90
2.90
4.40
2.58
3.94
-0.1
2.00
3.00
4.50
0.10
0.10
0.10
0.36
0.36
0.1
1.0
2
Top=-40～+85℃
Min.
Max.
1.50
2.10
3.85
0.50
0.90
1.65
1.90
2.90
4.40
2.48
3.80
0.10
0.10
0.10
0.44
0.44
-1.0
1.0
10.0
Unit
Condition
V
V
V
V
μA
μA
Vin=Vil Ioh=-50μA
or
Vih
Ioh=-4mA
Ioh=-8mA
Vin=Vil
or
Vih
Iol=50μA
Iol=4mA
Iol=8mA
Vin=Vdd or GND
Vin=Vdd or GND
HIGH SPEED CMOS LOGIC IC
ELM7SH86xB
2-input Exclusive OR gate
■AC electrical characteristics
Parameter
Sym.
Propagation
delay-time
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
Input
capacity
Equivalent
inner
capacity
Cin
Vdd
CL
3.3±0.3
15
3.3±0.3
50
5.0±0.5
15
5.0±0.5
50
tr=tf=3ns
Top=25℃
Min.
Typ.
4.4
4.0
6.1
5.6
3.3
2.9
4.4
4.1
5.0
4.0
Cpd
Top=-40～+85℃
Unit
Max.
Min.
Max.
11.0
1.0
13.0
11.0
1.0
13.0
14.5
1.0
16.5
14.5
1.0
16.5
ns
6.8
1.0
8.0
6.8
1.0
8.0
8.8
1.0
10.0
8.8
1.0
10.0
10.0
10.0
Condition
Refer to
test circuit
pF Vin=Vdd or GND
12.0
pF
f=1MHz
* Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit.
Averaged operating current consumption at non load is calculated as following formula; Idd(opr)=Cpd・Vdd・fin+Idd
■Test circuit
■Measured wave pattern
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* Output should be opened when measuring current consumption.
■Marking
SSOT-25
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SOT-25
No.
①
②
③
3
Mark
F
8
A～Z
(except I, O, X)
Content
ELM7SH series
ELM7SH86xB
Lot No.