ELM-TECH ELM7SHU04MBEL

HIGH SPEED CMOS LOGIC IC
ELM7SHU04xB Unbuffer Inverter
■General description
ELM7SHU04xB is CMOS unbuffer inverter which is suitable for battery-operated devices because of its low
voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which
allows longtime operation of devices. The internal circuit which is 1-stage unbuffer type can be used for crystal
oscillation.
■Features
•
•
•
•
•
•
•
Same electrical characteristic and high speed operation as 74VHC series
Low consumption current
: Idd=1.0μA(Max.)(Top=25°C)
Wide power voltage range
: 2.0V to 5.5V
Wide input voltage range
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)
High speed
: Tpd=2ns(Typ.)(Vdd=5.0V)
Small package
: SOT-25, SC-70-5(SOT-353)
Same function and pin configuration as ELM7SxxB
■Application
•
•
•
•
•
•
•
Cell phones
Digital cameras
Portable electrical appliances like PDA, etc.
Computers and peripherals
Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
Modification inside print board, adjustment of timing, solution to noise
Power voltage change from 5V to 3V
■Selection guide
ELM7SHU04xB-EL
Symbol
a
Function
b
Package
c
d
Product version
Taping direction
U04: Unbuffer Inverter
M: SOT-25
T: SC-70-5(SOT-353)
B
EL: Refer to PKG file
ELM7SH U04 x B - EL
↑ ↑ ↑ ↑
a b c d
■Maximum absolute ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Input protection diode current
Output parasitic diode current
Output current
VDD/GND current
Power dissipation
Storage temperature
Symbol
Vdd
Vin
Vout
Iik
Iok
Iout
Idd, Ignd
Pd
Tstg
Limit
-0.5 to +6.0
-0.5 to +6.0
-0.5 to Vdd+0.5
-20
±20
±25
±50
150
-65 to +150
3- 1
Unit
V
V
V
mA
mA
mA
mA
mW
°C
HIGH SPEED CMOS LOGIC IC
ELM7SHU04xB Unbuffer Inverter
■Suggested operating condition
Parameter
Power voltage
Input voltage
Output voltage
Operating temperature
Symbol
Vdd
Vin
Vout
Top
High-input down-time
tr, tf
Limit
2.0 to 5.5
0 to 5.5
0 to Vdd
-40 to +85
Vdd=3.3±0.3V
Vdd=5.0±0.5V
0 to 200
0 to 100
Unit
V
V
V
°C
ns
■Pin configuration
TOP VIEW
1
Pin No.
1
2
3
4
5
4
5
2
3
Pin name
NC
INY
GND
OUTX
VDD
Input
INY
Low
High
Output
OUTX
High
Low
■DC electrical characteristics
Parameter
Sym.
Vih
Input voltage
Vil
Voh
Output voltage
Vol
Input current
Static current
Iin
Idd
Vdd
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
Min.
1.70
2.40
4.40
1.80
2.70
4.00
2.58
3.94
-0.1
Top=25°C
Top=-40 to +85°C
Unit
Condition
Typ.
Max.
Min.
Max.
1.70
2.40
V
4.40
0.30
0.30
0.60
0.60
V
1.10
1.10
2.00
1.80
3.00
2.70
Vin=Vil Ioh=-50μA
4.50
4.00
V
2.48
Ioh=-4mA
Vin=GND
3.80
Ioh=-8mA
0.20
0.20
0.30
0.30
Vin=Vih Iol=50μA
0.50
0.50
V
0.36
0.44
Iol=4mA
Vin=Vdd
0.36
0.44
Iol=8mA
0.1
-1.0
1.0
μA
Vin=Vdd or GND
1.0
10.0
μA
Vin=Vdd or GND
3- 2
HIGH SPEED CMOS LOGIC IC
ELM7SHU04xB Unbuffer Inverter
■AC electrical characteristics
Parameter
Sym.
Propagation
delay-time
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
Input
capacity
Equivalent
inner
capacity
Cin
Vdd
CL
3.3±0.3
15
3.3±0.3
50
5.0±0.5
15
5.0±0.5
50
Top=25°C
Min.
Typ.
2.8
2.7
4.5
4.2
2.4
2.2
3.6
3.5
5.0
2.0
Cpd
Top=-40 to +85°C
Unit
Max.
Min.
Max.
8.9
1.0
10.5
8.9
1.0
10.5
11.4
1.0
13.0
11.4
1.0
13.0
ns
5.5
1.0
6.5
5.5
1.0
6.5
7.0
1.0
8.0
7.0
1.0
8.0
10.0
10.0
tr=tf=3ns
Condition
Refer to
test circuit
pF Vin=Vdd or GND
16.0
pF
f=1MHz
* Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test
circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd
■Test circuit
■Measured wave pattern
Vdd
Pulse
Oscillator
3ns
OUTPUT
INPUT
INPUT
90%
50%
90%
50%
Vdd
10%
GND
Voh
OUTPUT
CL
50�
10%
3ns
50%
tPHL
50%
tPLH
* Output should be opened when measuring current consumption.
■Marking
SC-70-5
a
b
SOT-25
c
a
b
No.
a
b
c
c
3- 3
Mark
F
6
A to Z
(except I, O, X)
Content
ELM7SH series
ELM7SHU04xB
Lot No.
Vol