CMOS LOGIC IC ELM7S02B 2-input NOR gate ■General description ELM7S02B is CMOS 2-input NOR gate IC. It realizes high speed operation similar to LS-TTL with lower power consumption by CMOS features. The inner circuit structure of 3-stage logic gate obtains wider noise immunity and constant output. ■Features ・ Same electrical characteristic as 74HC series (output current is around 1/2 of 74HC series) ・ Low consumption current ： Idd=1.0μA(Max.)(Top=25℃ ) ・ Wide power voltage range ： 2.0V～6.0V ・ High speed ： Tpd=5ns(Typ.)(Vdd=5.0V) ・ Symmetrical output impedance ： | Ioh |=Iol=2mA (Min.)(Vdd=4.5V) ・ Small package : SOT-25 ■Application ・ Cell phones ・ Digital cameras ・ Portable electrical appliances like PDA, etc. ・ Computers and peripherals ・ Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc. ・ Modification inside print board, adjustment of timing, solution to noise ■Selection guide ELM7S02B-EL Symbol a b c Function Product version Taping direction 02 : 2-input NOR gate B EL : Refer to PKG file ELM7S 0 2 B - EL ↑ ↑ ↑ a b c ■Maximum absolute ratings Parameter Power supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current Output current VDD/GND current Power dissipation Storage temperature Symbol Vdd Vin Vout Iik Iok Iout Idd, Ignd Pd Tstg Limit -0.5～+7.0 -0.5～Vdd+0.5 -0.5～Vdd+0.5 ±20 ±20 ±25 ±25 200 -65～+150 1 Unit V V V mA mA mA mA mW ℃ CMOS LOGIC IC ELM7S02B 2-input NOR gate ■Suggested operating condition Parameter Power voltage Input voltage Output voltage Operating temperature Symbol Vdd Vin Vout Top High-input down-time tr, tf Limit 2.0～6.0 0～Vdd 0～Vdd -40～+85 Vdd=2.0V Vdd=4.5V Vdd=6.0V Unit V V V ℃ 0～1000 0～500 0～400 ns ■Pin configuration SOT-25 (TOP VIEW) � � Pin No. 1 2 3 4 5 � � � Pin name INB INA GND OUTX VDD Input INA Low Low High High ■AC electrical characteristics Parameter Sym. tTLH tTHL tPLH tPHL Output transition time Propagation delay-time Parameter Sym. tTLH Output transition time tTHL tPLH Propagation delay-time tPHL Input capacity Equivalent inner capacity Cin Cpd Vdd 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 INB Low High Low High Output OUTX High Low Low Low CL=15pF, tr=tf=6ns, Vdd=5V Min. Top=25℃ Typ. Max. 4 10 3 10 5 15 5 15 Top=25℃ Min. Typ. 21 8 7 16 7 6 19 8 7 17 7 6 5 10 Max. 125 25 21 125 25 21 100 20 17 100 20 17 10 Unit Condition ns Refer to test circuit ns Refer to test circuit CL=50pF, tr=tf=6ns Top=-40～+85℃ Unit Condition Min. Max. 155 31 ns 26 Refer to test circuit 155 31 ns 26 125 25 ns 21 Refer to test circuit 125 25 ns 21 10 pF pF * Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd・Vdd・fin+Idd 2 CMOS LOGIC IC ELM7S02B 2-input NOR gate ■DC electrical characteristics Parameter Sym. Vih Input voltage Vil Voh Output voltage Vol Input current Static current Iin Idd Vdd 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 Top=25℃ Min. Typ. Max. 1.50 3.15 4.20 0.50 1.35 1.80 1.90 2.00 4.40 4.50 5.90 6.00 4.18 4.35 5.68 5.83 0.00 0.10 0.00 0.10 0.00 0.10 0.12 0.26 0.13 0.26 -0.1 0.1 1.0 ■Test circuit Top=-40～+85℃ Min. Max. 1.50 3.15 4.20 0.50 1.35 1.80 1.90 4.40 5.90 4.13 5.63 0.10 0.10 0.10 0.33 0.33 -1.0 1.0 10.0 Condition V V Ioh=-20μA V Vin=Vil Ioh=-2mA Ioh=-2.6mA Vin= Vih or Vil V Iol=2mA Iol=2.6mA Vin=Vdd or GND Vin=Vdd or GND μA μA ��� ����� ������ ����� ��� ��� ��� ��� ��� ��� ��� ��� �� ��� ��� ��� ���� ��� ���� * Output should be opened when measuring current consumption. ■Marking SOT-25 No. ① ② Mark E 3 A～Z (except I, O, X) ③ 3 ��� ���� ���� ������ ��� Iol=20μA ■Measured wave pattern ��� ����� ����������� Unit Content ELM7S series ELM7S02B Lot No. ��� ��� ��� ���