HIGH SPEED CMOS LOGIC IC ELM7SH08xB 2-input AND gate ■General description ELM7SH08xB is CMOS 2-input AND gate which is suitable for battery-operated devices because of its low voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which allows long time operation of devices. The internal circuit which provides high noise immunity and stable output is composed of 4 stages, including buffered output. ■Features • • • • • • • Same electrical characteristic and high speed operation as 74VHC series Low consumption current : Idd=1.0μA(Max.)(Top=25°C) Wide power voltage range : 2.0V to 5.5V Wide input voltage range : Vih=5.5V(Max.)(Vdd=0 to 5.5V) High speed : Tpd=2ns(Typ.)(Vdd=5.0V) Small package : SOT-25, SC-70-5(SOT-353) Same function and pin configuration as ELM7SxxB ■Application • • • • • • • Cell phones Digital cameras Portable electrical appliances like PDA, etc. Computers and peripherals Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc. Modification inside print board, adjustment of timing, solution to noise Power voltage change from 5V to 3V ■Selection guide ELM7SH08xB-EL Symbol a Function b Package c d Product version Taping direction 08: 2-input AND gate M: SOT-25 T : SC-70-5(SOT-353) B EL: Refer to PKG file ELM7SH 0 8 x B - EL ↑ ↑ ↑ ↑ a b c d ■Maximum absolute ratings Parameter Power supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current Output current VDD/GND current Power dissipation Storage temperature Symbol Vdd Vin Vout Iik Iok Iout Idd, Ignd Pd Tstg Limit -0.5 to +6.0 -0.5 to +6.0 -0.5 to Vdd+0.5 -20 ±20 ±25 ±50 150 -65 to +150 3- 1 Unit V V V mA mA mA mA mW °C HIGH SPEED CMOS LOGIC IC ELM7SH08xB 2-input AND gate ■Suggested operating condition Parameter Power voltage Input voltage Output voltage Operating temperature Symbol Vdd Vin Vout Top High-input down-time tr, tf Limit 2.0 to 5.5 0 to 5.5 0 to Vdd -40 to +85 Vdd=3.3±0.3V Vdd=5.0±0.5V Unit V V V °C 0 to 200 0 to 100 ns ■Pin configuration TOP VIEW 5 1 Pin No. 1 2 3 4 5 4 2 3 Pin name INB INA GND OUTX VDD INA Low Low High High Input INB Low High Low High Output OUTX Low Low Low High ■DC electrical characteristics Parameter Sym. Vih Input voltage Vil Voh Output voltage Vol Input current Static current Iin Idd Vdd 2.0 3.0 5.5 2.0 3.0 5.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 3.0 4.5 5.5 5.5 Min. 1.50 2.10 3.85 1.90 2.90 4.40 2.58 3.94 -0.1 Top=25°C Top=-40 to +85°C Unit Condition Typ. Max. Min. Max. 1.50 2.10 V 3.85 0.50 0.50 0.90 0.90 V 1.65 1.65 2.00 1.90 3.00 2.90 Ioh=-50μA 4.50 4.40 V Vin=Vih 2.48 Ioh=-4mA 3.80 Ioh=-8mA 0.10 0.10 0.10 0.10 Vin=Vil Iol=50μA 0.10 0.10 V or 0.36 0.44 Vih Iol=4mA 0.36 0.44 Iol=8mA 0.1 -1.0 1.0 μA Vin=Vdd or GND 1.0 10.0 μA Vin=Vdd or GND 3- 2 HIGH SPEED CMOS LOGIC IC ELM7SH08xB 2-input AND gate ■AC electrical characteristics Parameter Sym. Propagation delay-time tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Input capacity Equivalent inner capacity Cin Vdd CL 3.3±0.3 15 3.3±0.3 50 5.0±0.5 15 5.0±0.5 50 Min. 5.0 Cpd Top=25°C Typ. 3.7 3.2 5.2 4.5 2.8 2.4 3.7 3.4 Max. 8.8 8.8 12.3 12.3 5.9 5.9 7.9 7.9 4.0 10.0 tr=tf=3ns Top=-40 to +85°C Unit Min. Max. 1.0 10.5 1.0 10.5 1.0 14.0 1.0 14.0 ns 1.0 7.0 1.0 7.0 1.0 9.0 1.0 9.0 10.0 Condition Refer to test circuit pF Vin=Vdd or GND 9.3 pF f=1MHz * Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit.Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd ■Test circuit ■Measured wave pattern 3ns Vdd Pulse Oscillator OUTPUT INPUT INPUT 10% 90% 50% Vdd 10% Voh 50% 50% OUTPUT Vol * Output should be opened when measuring current consumption. ■Marking SC-70-5 a b SOT-25 c a GND tPHL tPLH CL 50� 90% 50% 3ns b Sym. a b c c 3- 3 Mark F 2 A to Z (except I, O, X) Content ELM7SH series ELM7SH08xB Lot No.