epc3xx High sensitive photodiodes General Description Features The epc3xx family products are high-sensitive photo diodes for Low dark current light-barrier, light-curtain, and the like applications. These photo High quantum efficiency diodes are designed to be used in a reverse-bias mode. High dynamic range Diodes can be used in parallel This device allows the design of short to long range light barriers CSP package with very small footprint from a few millimeters up to tens of meters. Near infrared and visible version available Customer specific wavelength filter upon request Using chips from the epc3xx product line, linear or two dimensional arrays can be formed for any application, be it triangulation, spot location, angle measurement, rotary encoders, or similar. Applications Also, spectral sensitive detectors can easily be designed by applying color filters in front of the photo diodes. Light barriers ranging from millimeters to tens of meters Light curtains Also, other mechanical dimensions are available upon request. It Smoke detectors is be possible to manufacture photo diodes of up to 15x15 mm or Liquid detectors even bigger. Such a 15x15 mm device then would contain 450 Heart beat monitors individual photo diodes, each of them individually accessible. All Position detection (rotary, linear, angle, etc.) diodes feature a very high quantum efficiency of 90% in the near IR remote control of Hi-Fi, TV sets and other equipment IR range, a reverse breakdown voltage of up to 30 Volts and a Leveling instruments response time down to less than 100ns. All devices are available Differential measurement upon request with optical bandpass filters. Linear photo diode arrays Product Range Overview connection connection connection connection connection R connection R R connection R connection R connection R connection R R connection connection connection R connection connection R : refer to chapter “Electrical isolation between individual diodes” Model No. of Photo Diodes Diode Length (mm) Diode Width (mm) Total Active Area (mm2) Typ. Dark Current at 20°C (pA ) Ideal Bias Voltage (V) Wavelength (nm) Footprint Single diode 1 1.0 0.5 0.43 20 5 400 - 1050 --- epc300 2 1.0 1.0 0.86 40 5 400 - 1050 CSP4 epc310 4 2.0 1.0 1.71 80 5 400 - 1050 CSP8 epc320 8 2.0 2.0 3.42 160 5 400 - 1050 CSP16 epc330 16 4.0 2.0 6.84 320 5 400 - 1050 CSP32 Type specific characteristics (all diodes of the array connected in parallel) © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 1 Datasheet epc3xx - V2.3 www.espros.ch epc3xx Absolute Maximum Ratings (Notes 1, 2) Recommended Operating Conditions Reverse Voltage V R 30.0 V Min. Max. Units Breakdown Voltage between Diodes 10.0 V Reverse Voltage (V R) 1.5 20.0 V Storage Temperature Range (T S) -40°C to +85°C Operating Temperature (T A) -40 +85 °C Lead Temperature solder, 4 sec. (T L) +260°C Relative Humidity (non-condensing) +5 +95 % Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics. Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (<2kV). Handling and assembly of this device should only be done at ESD protected workstations. Note 3: Unless otherwise stated, measuring parameters are V R = 5.0 V, -40°C < T A < +85°C, RL = 50 Ω Note 4: Unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips General Characteristics (Notes 3, 4) Symbol Parameter Conditions/Comments Values Min. λS max. Typ. Units Max. Wavelength max. Sensitivity λ Wavelength Range S = 20 % of S max 850 Sλ Spectral Sensitivity λ = 850nm, V R = 5V, Ie = 1 mW/cm2, type epc300 η Quantum Efficiency λ = 850nm, V R = 5V, Ie = 1 mW/cm2, type epc300 φ Half angle VO Open Circuit Voltage TCV Temperature Coefficient of I SC 0.38 %/K TCO Temperature Coefficient of V O -3.0 mV/K 400 Ie = 0.5 mW/cm2 nm 1030 nm 0.6 A/W 90 % ±60 ° 300 mV Type Specific Characteristics @ +25°C (all diodes of the array connected in parallel ) Symbol Parameter Conditions/Comments Values Min. IP Photo Current per diode epc300 VR = 5V, Ie = 1 mW/cm2, λ = 850 nm (NIR filter centered on 850nm) Dark Current * 10 20 40 VR = 5 V, TA= 20°C 20 250 40 500 epc310 80 1000 epc320 160 2000 epc330 320 4000 epc300 ISC Short-circuit Current μA 5 epc320 per diode Units Max. 2.5 epc310 epc330 IR Typ. per diode Ie = 1 mW/cm2 2.5 epc300 5 epc310 10 epc320 20 epc330 40 pA μA * selected types available upon request © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 2 Datasheet epc3xx - V2.3 www.espros.ch epc3xx Symbol Parameter Conditions/Comments Values Min. tr CO NEP CT Rise/Fall Time Capacitance Noise Equivalent Power Cross Talk Suppression all types per diode Typ. photo current measured at RL = 50 Ω , λ = 850 nm, I P = 200 μA ns VR = +1.5 V 300 VR = +5.0 V 150 VR = +10.0 V 90 VR = +5V, ƒ = 100kHz, E = 0 5 epc300 10 epc310 20 epc320 40 epc330 80 per diode VR = 5 V pF 4.2x10-15 epc300 6.0x10 epc310 8.4x10-15 epc320 1.2x10-14 epc330 1.7x10-14 epc320 epc330 © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice between individual photo diodes on the same chip, if the voltage difference Vdiff is <100mV between individual diodes (cathodes) 3 Units Max. 50 W/√Hz -15 dB Datasheet epc3xx - V2.3 www.espros.ch epc3xx Connection Diagrams epc300 Anode 2 Anode 1 4 The structure of the diodes shown in the figure to the left is the same for all individual diodes on the chip also for the models epc310, epc320, and epc330. Always two photo diodes are paired and have shorted anodes as shown in the figure. R: refer to chapter “Electrical isolation between individual diodes” 3 Top View 1 2 Cathode 1 epc310 Cathode 2 Anode 1 Anode 2 8 7 Anode 3 Anode 4 6 5 3 4 R Top View 1 2 Cathode 1 Cathode 2 Cathode 3 Cathode 4 epc320 Anode 5 Anode 6 16 Anode 7 15 Anode 8 14 13 Cathode 7 Cathode 8 R Cathode 5 Cathode 6 9 10 11 12 R R Top View 8 R 7 Anode 1 6 Anode 2 1 Anode 3 2 Cathode 1 5 Cathode 2 Anode 4 3 4 Cathode 3 Cathode 4 epc330 Anode 9 Anode 10 32 Anode 11 31 Anode 12 30 Anode 13 29 28 R Cathode 9 Cathode 10 17 Cathode 12 19 R Anode 15 27 R Cathode 11 18 Anode 14 Anode 16 26 25 R Cathode 13 20 Cathode 14 21 R Cathode 15 22 Cathode 16 23 R 24 R Top View R R R 16 15 14 13 12 11 10 9 Anode 1 Anode 2 Anode 3 Anode 4 Anode 5 Anode 6 Anode 7 Anode 8 1 2 3 4 5 6 7 8 Cathode 1 Cathode 2 Cathode 3 Cathode 4 Cathode 5 Cathode 6 Cathode 7 Cathode 8 © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 4 Datasheet epc3xx - V2.3 www.espros.ch epc3xx Other Parameters (typical values, T amb = 25°C, VDD = 5.0V, IPD=0mA) epc3x0 1 1E+1 0.8 0.7 1E+0 0.6 IP (µA) 0.5 0.4 0.3 1E-1 1E-2 1E-3 0.2 40 60 Angle (°) 80 100 Ie (mW/cm2) Photocurrent IP = ƒ(Ie), VR = 5 V, λ=850nm Relative sensitivity vs. illumination angle epc300/310/320/330 epc30x 500 10%-90% rise / fall time [ns] 1 0.9 1E+1 20 1E+0 0 1E-1 1E-4 0 1E-2 1E-4 0.1 1E-3 Relative Sensitivity 0.9 Relative Sensitivity epc300 1E+2 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 450 400 ___ fall time ..... rise time 350 300 250 200 150 100 50 0 400 500 600 700 800 900 1000 0 Wavelength (nm) 2 3 4 5 6 7 8 9 10 Reverse bias voltage [V] Rise/ fall time versus reverse bias voltage Relative spectral sensitivity Photodiode 1 1 Photodiode 2 10.00 0.00 -10.00 Cross-talk [dB] -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 -100 0 100 200 300 400 500 600 700 800 900 10001100 Position [μm] Cross-talk between a pair of photodiodes © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 5 Datasheet epc3xx - V2.3 www.espros.ch epc3xx Application Information Light Barrier Application The following circuit uses an epc3xx photo diode with an epc13x PD amplifier chip. This circuit offers a very high AC photo current sensitivity and a tremendous DC backlight suppression. 5V epc3xx C1 C3 R1 VDD PD OUT epc13x VN CN C2 VSS Figure 1: Typical schematic circuit using an epc13x PD amplifier Recommended Components Values R1: 27k (bias resistor). Sensitivity can be reduced by the reduction of this resistor. C1: Usually not needed. May be up to 100 pF (refer to the epc13x data sheet). C2: 33nF (DC input current filter capacitor) C3: 100nF or more (power supply filter capacitor) Spectral Sensitivity This photo diode contains an anti-reflection coating on the photosensitive surface. Standard versions have no optical filter in order to allow applications from the near UV to the near IR range. However, optical filters deposited on the photosensitive surface are available upon request. The filter parameters can be adjusted in a wide range according to specific customer requirements. Electrical Isolation between individual Diodes The individual diodes are located on a monolithic silicon chip. Thus, the electrical isolation between the individual diodes is not as good as with diodes on separate substrates. The substrate is conductive in x and y direction between all anodes, e.g. indicated in schematics by “R”. In x direction between the anode pairs ca. 20k Ω is a typical value. They must not be used as resistor components. Design rules On chip are the anodes metallic connect together by pairs. The user has to take care, that all anode pins are connected to the same voltage level (refer to above section). All pins of the diode array should be connected electrical-wise. The biasing of the cathodes can be individual.Their voltage levels should be equal best match. © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 6 Datasheet epc3xx - V2.3 www.espros.ch Thi s document is confidential and pr otected by law and internati onal trades. It must not be shown to any thir d party nor be copied in any form without our written per mission . epc3xx Layout Information (all measures in mm, ) Package Mechanical Dimensions Designed <Name> Approved <Name> <Data> M 1:1 DIN A4 Scale Page CSP4 Part Name 26.02.2009 1 Part No. <Partname> 0.14 File: Unbenannt Bottom View <x000 000> max 0.10 Layout Recommendations 0.10 max. 0.1524 Top View 0.50 Solder balls Sn97.5Ag2.5 0.40 1.00 0.05 1.00 +0.00/-0.10 0.50 1 2 photo diode photo diode area area max 0.10 0.50 1.00 +0.00/-0.10 4 3 0.90 ∅ 0.30 photosensitive area 0.26 ±0.04 0.50 CSP8 Bottom View 0.14 1.00 no solder mask inside this area Top View max. 0.1524 ∅ 0.30 5 4 0.50 photo diode area 0.50 photo diode area 8 1 1.00 ±0.00/-0.10 0.50 1.00 0.26 ±0.04 photosensitive area Solder balls Sn97.5Ag2.5 0.05 0.50 © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 2.00 0.50 photo diode area 0.50 7 2.00 ±0.00/-0.10 6 2 0.50 3 0.50 photo diode area no solder mask inside this area 7 Datasheet epc3xx - V2.3 www.espros.ch epc3xx Layout Information (Cont.) Package Mechanical Dimensions CSP16 0.14 Top View 14 15 16 10 9 5 6 7 8 0.50 4 3 2 photo diode area photo diode photo diode area area photo diode area 1 0.50 0.50 photo diode photo diode area area 0.10 11 0.50 12 photo diode photo diode area area 2.00 +0.00/-0.10 0.50 13 max. 0.10 Bottom View 0.50 max. 0.10 0.10 Solder balls Sn97.5Ag2.5 0.05 2.00 +0.00/-0.10 0.26 ±0.40 photosensitive area CSP32 0.14 26 27 28 29 30 31 32 24 23 22 21 20 19 18 17 9 10 11 12 13 14 15 16 8 7 6 5 4 3 2 1 0.50 0.50 2.00 +0.00/-0.10 0.50 25 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.05 4.00 +0.00/-0.10 Solder balls Sn97.5Ag2.5 0.26 ±0.04 photosensitive area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 8 Datasheet epc3xx - V2.3 www.espros.ch epc3xx Packaging Information (all measures in mm) CSP4 Tape CSP8 Tape Pin 1 12 8 8 Pin 1 4 4 CSP16 Tape CSP32 Tape Pin 1 12 8 12 Pin 1 4 4 Tape & Reel Information The devices are mounted on embossed tape for automatic placement systems. The tape is wound on 178 mm (7 inch) or 330 mm (13 inch) reels and individually packaged for shipment. General tape-and-reel specification data are available in a separate data sheet and indicate the tape sizes for various package types. Further tape-and-reel specifications can be found in the Electronic Industries Association (EIA) standard 481-1, 481-2, 481-3. epc does not guarantee non-empty cavities. Thus, pick-and-place machines should check the presence of a chip during picking. It is highly recommended to use underfill after assembly of the chips to the PCB. Ordering Information Part Name Package RoHS compliance Packaging Method epc300-CSP4 CSP4 Yes Reel epc310-CSP8 CSP8 Yes Reel epc320-CSP16 CSP16 Yes Reel epc330-CSP32 CSP32 Yes Reel © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 9 Datasheet epc3xx - V2.3 www.espros.ch epc3xx IMPORTANT NOTICE ESPROS Photonics AG and its subsidiaries (epc) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to epc’s terms and conditions of sale supplied at the time of order acknowledgment. epc warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with epc’s standard warranty. Testing and other quality control techniques are used to the extent epc deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. epc assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using epc components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. epc does not warrant or represent that any license, either express or implied, is granted under any epc patent right, copyright, mask work right, or other epc intellectual property right relating to any combination, machine, or process in which epc products or services are used. Information published by epc regarding third-party products or services does not constitute a license from epc to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from epc under the patents or other intellectual property of epc. Resale of epc products or services with statements different from or beyond the parameters stated by epc for that product or service voids all express and any implied warranties for the associated epc product or service. epc is not responsible or liable for any such statements. epc products are not authorized for use in safety-critical applications (such as life support) where a failure of the epc product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of epc products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by epc. Further, Buyers must fully indemnify epc and its representatives against any damages arising out of the use of epc products in such safetycritical applications. epc products are neither designed nor intended for use in military/aerospace applications or environments unless the epc products are specifically designated by epc as military-grade or "enhanced plastic." Only products designated by epc as military-grade meet military specifications. Buyers acknowledge and agree that any such use of epc products which epc has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. epc products are neither designed nor intended for use in automotive applications or environments unless the specific epc products are desig nated by epc as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, epc will not be responsible for any failure to meet such requirements. © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 10 Datasheet epc3xx - V2.3 www.espros.ch