DATASHEET – epc3xx-LCCxx Photodiode evaluationboard epc3xx-LCCxx General Description Features epc300 or epc330 photodiodes in CSP-housing on LCC-housing carrierboard for part evaluation purpose of the epc3xx family products. The epc3xx family products are high-sensitive photodiodes for light-barrier, light-curtain and the like applications. They allow the design of sensors or of short to long range light barriers from a few millimeters up to tens of meters. Linear or two dimensional arrays can be formed for any application: Triangulation, spot location, angle measurement, rotary encoder, sensor or similar. Spectral sensitive detector can easily be designed by applying color filters in front of the photodiodes. ■ Carrierboard in LCC-housing design with epc300 or epc330 photodiodes for easy part evaluation by users. ■ High dynamic range. ■ High quantum efficiency. ■ Low dark current. ■ Diodes can be used in parallel. Applications ■ Light barrier ranging from millimeters to tens of meters ■ Light curtain ■ Light, smoke, liquid, leveling, triangulation detectors ■ Position detection (rotary, linear, angle, etc.) ■ Differential measurement ■ Linear photodiode arrays The photodiodes are designed to be used in reverse-bias mode. They feature a very high quantum efficiency of 90% in the near IR range. The reverse breakdown voltage is up to 30 Volts. The response time is less than 100ns. Other mechanical dimensions are available upon request up to 15x15 mm or even bigger. A 15x15 mm device contains 450 single photodiodes, each individually accessible. Typ. Dark Total Active Current Area at 20°C (pA ) (mm2) No. of Photo Diodes Diode Length (mm) Diode Width (mm) Single diode 1 1.0 0.5 0.43 epc300-LCC4 2 1.0 1.0 epc330-LCC32 16 4.0 2.0 Model Ideal Bias Voltage (V) Wavelength (nm) Footprint 20 5 400 - 1050 --- 0.86 40 5 400 - 1050 LCC4 6.84 320 5 400 - 1050 LCC32 Wiring diagram 4 3 4 D1 3 4 D2 31 1 17 3 4 3 D9 2 D1 1 2 27 18 19 D10 32 25 31 23 21 D11 D12 17 D1318 D14 30 29 D9 1 2 32, 30, 28, 26 2, 4, 6, 8 16 Evaluationboard 2 D1 15 D3 28 1 Evaluationboard 1 2 3 3 5 4 16 7 5 D16 26 23 20 30 11 21 D7 19 22 2 25 D13 D14 29 10 D6 21 24, 22, 20, 18 10, 12, 14, 16 9 D 28 27 2 12 11 1 D8 6 9 14 11 7 8 13 13 D2 D3 15 D4 D5 D6 Figure 2: Schematic epc330-LCC32 1 Grid: 2.5mm 31 15 1 Characteristics subject to change without notice 27 D5 D1 © 2012 ESPROS Photonics Corporation 19 D15 24 25 D11 D12 12 D4 23 27 D10 13 17 32, 30, 28, 26 2, 4, 6, 8 ep3xx-LCCxx Figure 1: Schematic epc300-LCC4 19 22 29 32 14 D2 21 20 31 D2 ep3xx-LCCxx 1 29 1/2 2 3 3 5 4 7 5 9 Datasheet epc3xx-LCCxx - V1.0 www.espros.ch 6 11 13 Absolute Maximum Ratings Operating Ratings Reverse Voltage V R Breakdown Voltage between Diodes 30.0 V 10.0 V Reverse Voltage V R ESD rating of JEDEC +1.5V to +20V HBM class 2 (<2kV) Storage temperature (T A) Soldering Lead Temperature (T L), 4 sec -40°C to +85°C +260°C Operating temperature (T A) Humidity, non-condensing -40°C to +85°C 5% to 95% Note 1: Information only. Refer to the datasheet epc3xx for detailed and valid technical specifications. Note 2: Unless otherwise stated, data apply for individual photodiodes @ V R = 5.0 V, -40°C < T A < +85°C, RL = 50 Ω. General Characteristics Symbol Parameter Min. Typ. Max. Unit λS max. Wavelength @ max. Sensitivity λ Wavelength Range: S = 20 % to S max Sλ Spectral Sensitivity @ λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300 0.6 A/W η Quantum Efficiency @ λ = 850nm, V R = 5V, Ie = 1 mW/cm2, type epc300 90 % 850 nm 400 1050 nm Type Specific Characteristics @ +25°C (all diodes of the array connected in parallel) Symbol Parameter Type IP Photo Current @ VR = 5V, Ie = 1 mW/cm2, λ = 850 nm per diode Dark Current @ VR = 5 V, TA= 20°C Short-circuit Current @ e = 1 mW/cm2 Rise/Fall Time; all types @ RL = 50 Ω , λ = 850 nm, I P = 200 μA 2.5 5 epc330 40 per diode 20 250 epc300 40 500 epc330 320 4000 per diode 2.5 epc300 5 epc330 40 VR = +1.5 V 300 VR = +5.0 V 150 VR = +10.0 V 90 1.00 1.00 2.00 2.54 3 23 22 21 20 30 19 31 18 1.00 24 17 2.00 epc330 1 5.03 ±0.1 2 25 32 1.38 2.00 4 26 1.00 epc300 1 dB 1.30 4.78 ±0.1 Pin1 epc300 ns 1.00 28 29 2 30 3 31 4 4.78 ±0.1 27 5 1.30 16 Pin1 25 epc330 24 26 6 7 8 23 22 9 15 19 14 18 11 13 12 10 17 epc330 22.86 ±0.1 Pin1 epc330 16 2.40 1.00 1.30 15 Figure 4: Dimensions epc330-LCC32 2.54 2 2.54 3 14 4 © 2012 ESPROS Photonics Corporation 21 20 32 1 Figure 3: Dimensions epc300-LCC4 22.86 ±0.1 1.00 27 1.00 3 μA 2.00 5 6 2/2 7 8 9 10 11 13 12 Characteristics subject to change without notice 2.54 22.86 ±0.1 2.40 2.40 2 28 29 2.00 4 2.54 1 pA 50 1.00 epc300 1.38 2.00 Pin1 epc300 μA epc300 Cross Talk Suppression epc330 between individual photo diodes on the same chip, if the voltage difference V diff is <100mV between individual diodes (cathodes) 5.03 ±0.1 CT Unit 2.54 tr Max. 2.40 ISC Typ. 22.86 ±0.1 IR Min. Datasheet epc3xx-LCCxx - V1.0 1.00 www.espros.ch 1.30