T1110P6 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: = ± 60° 21591 DESCRIPTION • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC T1110P6 is a high speed and high sensitive PIN photodiode chip with 7.5 mm2 sensitive area detecting visible and near infrared radiation. Anode is the bond pad on top. APPLICATIONS • High speed photo detector GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY Ira (μA) (deg) 0.1 (nm) 55 ± 60 430 to 1100 PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil with disco frame MOQ: 8000 pcs Chip COMPONENT T1110P6 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T1110P6-SD-F Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 60 UNIT V Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg1 - 40 to + 100 °C Storage temperature range on foil Tstg2 - 40 to + 50 °C Document Number: 81122 Rev. 1.4, 23-Mar-11 For technical questions, contact: [email protected] www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T1110P6 Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 IF = 50 mA VF 1 1.3 V VR = 10 V, E = 0 Iro 2 5 nA VR = 0 V, f = 1 MHz, E = 0 CD 70 Forward voltage Reverse dark current Diode capacitance MIN. TYP. MAX. UNIT V pF VR = 3 V, f = 1 MHz, E = 0 CD 25 pF Open circuit voltage Ee = 1 mW/cm2, = 950 nm VOC 350 mV Temperature coefficient of VOC Ee = 1 mW/cm2, = 950 nm TKVOC - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, = 950 nm Ik 50 μA Temperature coefficient of Ik Ee = 1 mW/cm2, = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 55 μA Angle of half sensitivity ± 60 deg Wavelength of peak sensitivity p 940 nm 0.1 430 to 1100 nm Range of spectral bandwidth Noise equivalent power VR = 10 V, = 950 nm NEP 4 x 10-14 W/Hz Rise time VR = 10 V, RL = 1 k, = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 k, = 820 nm tf 100 ns Note • The measurements are based on samples of die which are mounted on a TO-header without resin coating BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature www.vishay.com 2 1.4 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81122 Rev. 1.4, 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T1110P6 Silicon PIN Photodiode 80 CD - Diode Capacitance (pF) Ira - Reverse Light Current (µA) 1000 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 E=0 f = 1 MHz 60 40 20 0 0.1 10 1 Ee - Irradiance (mW/cm2) 12787 Vishay Semiconductors 948407 Fig. 3 - Reverse Light Current vs. Irradiance 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage 1 mW/cm 2 S(λ)rel - Relative Spectral Sensitivity Ira - Reverse Light Current (µA) 100 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 λ = 950 nm 1 0.1 12788 1 1.0 0.8 0.6 0.4 0.2 0 100 10 350 Fig. 4 - Reverse Light Current vs. Reverse Voltage 550 750 950 1150 λ - Wavelength (nm) 94 8420 VR - Reverse Voltage (V) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 2.97 Length of chip edge (y-direction) Ly 2.97 mm Sensitive area AS 2.74 x 2.74 mm2 Die height Bond pad anode mm H 0.28 mm axb 0.2 x 0.2 mm2 ADDITIONAL INFORMATION (Tamb = 25 °C, unless otherwise specified) Frontside metallization, anode Aluminum Backside metallization, cathode NiV-Ag Dicing Sawing Die bonding technology Epoxy bonding Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. Document Number: 81122 Rev. 1.4, 23-Mar-11 For technical questions, contact: [email protected] www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T1110P6 Vishay Semiconductors Silicon PIN Photodiode HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81122 Rev. 1.4, 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1