VISHAY T1110P6-SD-F

T1110P6
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity:  = ± 60°
21591
DESCRIPTION
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
T1110P6 is a high speed and high sensitive PIN photodiode
chip with 7.5 mm2 sensitive area detecting visible and near
infrared radiation. Anode is the bond pad on top.
APPLICATIONS
• High speed photo detector
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
Ira (μA)
 (deg)
0.1 (nm)
55
± 60
430 to 1100
PACKAGING
REMARKS
PACKAGE FORM
Wafer sawn on foil with disco
frame
MOQ: 8000 pcs
Chip
COMPONENT
T1110P6
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
T1110P6-SD-F
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
60
UNIT
V
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg1
- 40 to + 100
°C
Storage temperature range on foil
Tstg2
- 40 to + 50
°C
Document Number: 81122
Rev. 1.4, 23-Mar-11
For technical questions, contact: [email protected]
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T1110P6
Silicon PIN Photodiode
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
IF = 50 mA
VF
1
1.3
V
VR = 10 V, E = 0
Iro
2
5
nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
Forward voltage
Reverse dark current
Diode capacitance
MIN.
TYP.
MAX.
UNIT
V
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25
pF
Open circuit voltage
Ee = 1 mW/cm2,  = 950 nm
VOC
350
mV
Temperature coefficient of VOC
Ee = 1 mW/cm2,  = 950 nm
TKVOC
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2,  = 950 nm
Ik
50
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2,  = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2,  = 950 nm,
VR = 5 V
Ira
55
μA
Angle of half sensitivity

± 60
deg
Wavelength of peak sensitivity
p
940
nm
0.1
430 to 1100
nm
Range of spectral bandwidth
Noise equivalent power
VR = 10 V,  = 950 nm
NEP
4 x 10-14
W/Hz
Rise time
VR = 10 V, RL = 1 k,
 = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 k,
 = 820 nm
tf
100
ns
Note
• The measurements are based on samples of die which are mounted on a TO-header without resin coating
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
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2
1.4
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81122
Rev. 1.4, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T1110P6
Silicon PIN Photodiode
80
CD - Diode Capacitance (pF)
Ira - Reverse Light Current (µA)
1000
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
E=0
f = 1 MHz
60
40
20
0
0.1
10
1
Ee - Irradiance (mW/cm2)
12787
Vishay Semiconductors
948407
Fig. 3 - Reverse Light Current vs. Irradiance
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1 mW/cm 2
S(λ)rel - Relative Spectral Sensitivity
Ira - Reverse Light Current (µA)
100
0.5 mW/cm 2
0.2 mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
λ = 950 nm
1
0.1
12788
1
1.0
0.8
0.6
0.4
0.2
0
100
10
350
Fig. 4 - Reverse Light Current vs. Reverse Voltage
550
750
950
1150
λ - Wavelength (nm)
94 8420
VR - Reverse Voltage (V)
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
MECHANICAL DIMENSIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Length of chip edge (x-direction)
Lx
2.97
Length of chip edge (y-direction)
Ly
2.97
mm
Sensitive area
AS
2.74 x 2.74
mm2
Die height
Bond pad anode
mm
H
0.28
mm
axb
0.2 x 0.2
mm2
ADDITIONAL INFORMATION (Tamb = 25 °C, unless otherwise specified)
Frontside metallization, anode
Aluminum
Backside metallization, cathode
NiV-Ag
Dicing
Sawing
Die bonding technology
Epoxy bonding
Note
• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
Document Number: 81122
Rev. 1.4, 23-Mar-11
For technical questions, contact: [email protected]
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T1110P6
Vishay Semiconductors
Silicon PIN Photodiode
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only.
It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment.
• Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as
defined in MIL-HDBK-263.
• Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the
wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence
(humidity and contamination).
Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take
back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for
packing material that is returned unsorted or which we are not obliged to accept.
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For technical questions, contact: [email protected]ay.com
Document Number: 81122
Rev. 1.4, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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