bq25060 www.ti.com SLUSA32 – MAY 2010 1A, Single-Input, Single Cell Li-Ion Battery Charger with 50-mA LDO, and External Power Path Control Check for Samples: bq25060 FEATURES 1 • • • • • • • • • • • DESCRIPTION 30V input Rating, With 10.5V Over-Voltage Protection (OVP) FET Controller for External Battery FET for External Power Path Control (BGATE) Input Voltage Dynamic Power Management 50mA integrated Low Dropout Linear Regulator (LDO) Programmable Charge Current Through ISET and EN Pin 0.5% Battery Voltage Regulation Accuracy 7% Charge Current Regulation Accuracy Thermal Regulation and Protection Battery NTC Monitoring During Charge Status Indication – Charging/Done Available in small 2mm × 3mm 10 Pin SON Package The bq25060 is a highly integrated Li-Ion linear battery charger targeted at space-limited portable applications. It operates from either a USB port or AC Adapter and charges a single-cell Li-Ion battery with up to 1A of charge current. The 30V input voltage range with input over-voltage protections supports low-cost unregulated adapters. The bq25060 has a single power output that charges the battery. The system load is connected to OUT. The low-battery system startup circuitry maintains OUT greater than 3.4V whenever an input source is connected. This allows the system to start-up and run whenever an input source is connected regardless of the battery voltage. The charge current is programmable up to 1A using the ISET input. Additionally, a 4.9V 50mA LDO is integrated into the IC for supplying low power external circuitry. The battery is charged in three phases: conditioning, constant current and constant voltage. In all charge phases, an internal control loop monitors the IC junction temperature and reduces the charge current if an internal temperature threshold is exceeded. The charger power stage and charge current sense functions are fully integrated. The charger function has high accuracy current and voltage regulation loops, charge status display, and charge termination. APPLICATIONS • • • • Smart Phones Mobile Phones Portable Media Players Low Power Handheld Devices TYPICAL APPLICATION CIRCUIT VGPIO VGPIO bq25060 USB or Adaptor VBUS D+ DGND 1 R2 100kΩ CHG 8 OUT 10 STATUS IN C1 0.1uF VDD C2 1uF QBAT BGATE 9 7 EN BAT HOST 6 PACK+ 2 ISET 3 VSS TS 5 LDO 4 TEMP C4 0.1uF R1 1 kΩ PACK - VLDO C3 0.1uF GPIO 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated bq25060 SLUSA32 – MAY 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION PART NO. MARKING MEDIUM QUANTITY bq25060DQCR DAN Tape and Reel 3000 bq25060DQCT DAN Tape and Reel 250 PACKAGE DISSIPATION RATINGS TABLE PACKAGE RqJA RqJC TA < 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C 10 Pin 2mm × 3mm SON (1) 58.7°C/W (2) 3.9°C/W 1.70W 0.017W/°C (1) (2) Maximum power dissipation is a function of TJ(max), RqJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = [TJ(max) - TA]/RqJA. This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is connected to the ground plane by a 2×3 via matrix. ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE / UNIT IN (with respect to VSS) –0.3 to 30 V EN, TS, CHG, BGATE, ISET (with respect to VSS) –0.3 to 7 V Output Voltage BAT, OUT, LDO, CHG, BGATE (with respect to VSS) –0.3 to 7 V Input Current (Continuous) IN 1.2 A Output Current (Continuous) BAT 1.2 A Output Current (Continuous) LDO 100 mA Output Sink Current CHG Input Voltage 5 mA Junction temperature, TJ –40°C to 150°C Storage temperature, TSTG –65°C to 150°C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VIN IN voltage range IN operating voltage range MIN MAX 3.55 28 4.4 10.2 UNITS V IIN Input current, IN 1 A IOUT Ouput Current in charge mode, OUT 1 A RISET Input current limit programming resistor range 1 10 kΩ TJ Junction Temperature 0 125 °C ELECTRICAL CHARACTERISTICS Over junction temperature range 0°C ≤ TJ ≤ 125°C and VIN = 5V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS 3.25 3.40 3.55 V INPUT VUVLO 2 Under-voltage lock-out VIN: 0V → 4V Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 ELECTRICAL CHARACTERISTICS (continued) Over junction temperature range 0°C ≤ TJ ≤ 125°C and VIN = 5V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS VHYS-UVLO Hysteresis on UVLO VIN: 4V → 0V VBATUVLO Battery UVLO VBAT rising VHYS-BUVLO Hysteresis on BAT UVLO VBAT falling VIN-SLP Valid input source threshold VIN-SLP above VBAT Input power good if VIN > VBAT + VIN–SLP VBAT = 3.6V, VIN: 3.5V → 4V VHYS-INSLP Hysteresis on VIN-SLP VBAT = 3.6V, VIN: 4V → 3.5V 32 mV tDGL(NO-IN) Deglitch time, input power loss to charger turn-off Time measured from VIN: 5V → 2.5V 1µs fall-time 32 ms VOVP Input over-voltage protection threshold VIN: 5 V → 11 V VHYS-OVP Hysteresis on OVP VIN: 11 V → 5 V tDGL(OVP) Input over-voltage deglitch time tREC(OVP) Input over-voltage recovery time Time measured from VIN: 11V → 5V 1µs fall-time to LDO = HI, VBAT = 3.5V VIN_DPM Input DPM threshold VIN Falling, VIN-DPM enabled with EN 250 1.95 2.05 mV 2.15 V 125 30 10.2 4.2 75 10.5 mV 150 mV 10.8 V 100 mV 100 µs 100 µs 4.30 4.4 V 6 µA QUIESCENT CURRENT IBAT(PDWN) Battery current into BAT, No input connected VIN = 0V, TJ = 85°C IBAT(DONE) BAT current, charging terminated VIN = 6V, VBAT > VBAT(REG) 10 µA IIN(STDBY) Standby current into IN pin EN = HI, VIN < VOVP 0.6 mA EN = HI, VIN ≥ VOVP 2 ICC Active supply current, IN pin VIN = 6V, no load on OUT pin, VBAT > VBAT(REG), IC enabled 3 mA BATTERY CHARGER FAST-CHARGE VBAT(REG) Battery charge regulation voltage TA = 0°C to 125°C, IOUT = 50 mA TA = 25°C 4.16 4.20 4.23 4.179 4.200 4.221 IIN_RANGE User programmable input current limit range RISET = 1kΩ to 10kΩ, EN = VSS 100 IIN(LIM) Input current limit, or fast-charge current EN = FLOAT 435 EN = VSS KISET Fast charge current factor RISET = 1kΩ to 10kΩ, EN = VSS VDO(IN-OUT) VIN – VOUT VIN = 4.2V, IOUT = 0.75 A 467 V 1000 mA 500 mA KISET/RISET 900 1000 1100 AΩ 500 900 mV 700 Ω ISET SHORT CIRCUIT PROTECTION RISET_MAX Highest resistor value considered a short fault RISET: 900Ω → 300Ω, IOUT latches off, Cycle power to reset, Fault range > 1.10A tDGL-SHORT Deglitch time transition from ISET short to IOUT disable Clear fault by cycling VBUS or EN IOUT-CL Maximum OUT current limit regulation (Clamp) 430 1.5 1.2 ms 2 A V PRE-CHARGE AND CHARGE DONE VLOWV Pre-charge to fast-charge transition threshold External power path control disabled, BGATE = VSS 2.4 2.5 2.6 tDGL(LOWV) Deglitch time on fast-charge to pre-charge transition External power path control enabled VBAT rising or falling 2.8 2.9 3.0 IPRECHARGE Precharge current to BAT during precharge mode VBAT = 0V to 2.9V, Battery FET connected, Current out of BAT VBAT = 0V to 2.5V, BGATE = VSS, Input current limit regulated to IPRECHARGE ITERM Default termination current threshold VIN = 5V, ICHARGE = 100 mA to 1 A 25 ms 28 37 45 41.5 45 48.5 7.5 10.5 13.5 VBAT(REG) –0.13V VBAT(REG) –0.1V VBAT(REG) –0.065V mA %IIN(LIM) RECHARGE OR REFRESH VRCH Recharge detection threshold VBAT falling tDGL(RCH) Deglitch time, recharge threshold detected VBAT falling 25 V ms EXTERNAL POWER PATH CONTROL Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 3 bq25060 SLUSA32 – MAY 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Over junction temperature range 0°C ≤ TJ ≤ 125°C and VIN = 5V (unless otherwise noted) PARAMETER VOUT(REG) Output regulation voltage TEST CONDITIONS VBAT ≤ 2.9 V 2.9 V < VBAT ≤ 3.6V VBAT > 3.6 V MIN TYP MAX 3.4 3.5 3.6 UNITS V 3.44 3.59 3.75 V VBAT + Vdrop(QBAT) V VSUPP1 Enter supplement mode threshold VBAT = 3.4 V, VOUT Falling VOUT ≤ VBAT -0.06 V VSUPP2 Exit supplement mode threshold VBAT = 3.4 V, VOUT Rising VOUT ≥ VBAT-0.02 V VLDO LDO Output Voltage VIN = 5.5V, ILDO = 0mA to 50mA ILDO Maximum LDO Output Current VDO Dropout Voltage LDO 4.7 4.9 5.1 60 VIN = 4.5V, ILDO = 50mA V mA 200 300 mV 0.4 V LOGIC LEVELS ON EN VIL Logic low input voltage VIH Logic high input voltage 1.4 VFLT Logic FLOAT input voltage 600 IFLT_leakage Maximum leakage sink or source current to keep in FLOAT IEN_DRIVE Minimal drive current from an external device for Low or High V 850 1100 mV 1 µA 8 µA LOGIC LEVELS ON BGATE VIL Logic LOW input voltage VIH Logic HIGH input voltage 0.4 1.4 V V BATTERY-PACK NTC MONITOR (TS) VCOLD TS Cold Threshold Temperature falling VHYS(COLD) Hysteresis on Cold threshold Temperature rising, BGATE disabled VHOT TS Hot Threshold Temperature rising VHYS(HOT) Hysteresis on Hot Threshold Temperature falling, BGATE disabled tdgl(TS) Deglitch for TS Fault IN or OUT TS Fault VOL Output LOW voltage ISINK = 5 mA IIH Leakage current V/CHG = 5 V 24.4 25 25.6 1 12 12.5 % of VLDO % of VLDO 13 % of VLDO 1 % of VLDO 25 ms CHG OUTPUT 0.45 V 1 µA THERMAL REGULATION TJ(REG) Temperature Regulation Limit TJ rising 125 °C TJ(OFF) Thermal shutdown temperature TJ rising 155 °C TJ(OFF-HYS) Thermal shutdown hysteresis TJ falling 20 °C 4 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 DEVICE INFORMATION SIMPLIFIED BLOCK DIAGRAM LDO + Q1 Q2 OUT VIN Precharge Current Source + ISET + 125C Charge Pump TJ External Power Path Control Mode BAT IIN(REG) 1V 2.9V + VOUT(REG) + VIN_DPM + Charge Pump VOUT(MIN) USB Enable TERMINATION COMPARATOR BGATE + VREF + VOUTMIN 100mV External Power Path Control Mode Sleep Comparator 75mV EN + CHARGE CONTROL OVP Comparator VOUTMIN Enable Comparator VBAT + VOVP VBAT VIN + 3.6V VIN VLDO STATUS OUTPUT DISABLE + + CHG TS COLD TS HOT TS VSS Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 5 bq25060 SLUSA32 – MAY 2010 www.ti.com PIN CONFIGURATION IN ISET VSS OUT 1 10 2 9 BGATE 8 CHG 3 bq 25060 LDO 4 7 EN TS 5 6 BAT 10-pin 2mm x 3mm SON PIN FUNCTIONS PIN NAME NO. I/O DESCRIPTION IN 1 I Input power supply. IN is connected to the external DC supply (AC adapter or USB port). Bypass IN to VSS with at least a 0.1µF ceramic capacitor. ISET 2 I Current programming input. Connect a resistor from ISET to VSS to program the input current limit when the user proagammable mode is selected by the EN pin. The resistor range is between 1kΩ and 10kΩ to set the current between 100 mA and 1A. VSS 3 – Ground terminal. Connect to the thermal pad and the ground plane of the circuit. LDO 4 O LDO output. LDO is regulated to 4.9V and drives up to 50mA. Bypass LDO to VSS with a 0.1µF ceramic capacitor. LDO is enabled when VUVLO < VIN < VOVP. TS 5 I Battery pack NTC monitoring input. Connect the battery pack NTC from TS to VSS to monitor battery pack temperature. The default pack temperature range is 0°C to 45°C thresholds. EN 7 I Enable input. Drive EN high to disable the IC. Connect EN to VSS to place the bq25060 in the user pgrammable mode where the input current is programmed using the ISET input. Leave EN flaoting to place the bq25060 in USB500 mode. See the Charger Enable section for details on using the EN interface. CHG 8 O Charge status indicator open-drain output. CHG is pulled low while the device is charging the battery. CHG goes high impedance when the battery is fully charged and does not indicate subsequent recharge cycles. BAT 6 O Battery connection output. BAT is the sense input for the battery as well as the precharge current output. Connect BAT to the battery and bypass BAT to VSS with a 0.1µF ceramic capacitor. BGATE 9 I/O Battery P-Channel FET gate drive output. Connect BGATE to the gate of the external P-Channel FET that connects the battery to OUT. Connect BGATE to VSS if the external FET is not used. No external capacitor is recommended from BGATE to GND. OUT 10 O System output connection. OUT supplies the system with a minimum voltage of 3.4V (min.) to ensure system operation whenever an input adapter is connected regardless of the battery voltage. Bypass OUT to VSS with a minimum 1µF ceramic capacitor. Pad – There is an internal electrical connection between the exposed thermal pad and the VSS pin of the device. The thermal pad must be connected to the same potential as the VSS pin on the printed circuit board. Do not use the thermal pad as the primary ground input for the device. VSS pin must be connected to ground at all times. Thermal PAD 6 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 APPLICATION CIRCUITS VGPIO VGPIO bq25060 USB or Adaptor VBUS D+ DGND 1 R2 100kΩ CHG 8 OUT 10 STATUS IN C1 0.1uF VDD C2 1uF QBAT BGATE 9 7 EN BAT 6 TS 5 HOST PACK+ 2 TEMP C4 0.1uF ISET R1 1 kΩ PACK - 3 VSS LDO 4 VLDO C3 0.1uF GPIO Figure 1. Typical Application Circuit Using the External Power Path Control Feature VGPIO VGPIO bq25060 USB or Adaptor VBUS D+ DGND 1 R2 100kΩ CHG 8 OUT 10 STATUS IN C1 0.1uF VDD C2 1uF 7 EN BGATE 9 BAT 6 TS 5 HOST PACK+ 2 TEMP ISET R1 1 kΩ PACK - 3 VSS LDO 4 VLDO C3 0.1uF GPIO Figure 2. Typical Application Circuit Disabling the External Power Path Control Feature Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 7 bq25060 SLUSA32 – MAY 2010 www.ti.com TYPICAL CHARACTERISTICS Using circuit in Figure 1, TA = 25°C, unless otherwise specified ADAPTER INSERTION ENABLE USING EN EN 2 V/div VIN = 0 V - 5 V, VBAT = 3.3 V, ICHG = 280 mA VIN = 5 V, VBAT = 3 V, ICHG = 280 mA CHG 2 V/div VIN 5 V/div BGATE 2 V/div BGATE 2 V/div LDO 2 V/div ICHG 0.5 A/div IIN 100 mA/div 20 ms/div 10 ms/div Figure 3. Figure 4. DISABLE USING EN INPUT OVP EN 2 V/div LDO 2 V/div VIN 10 V/div VIN = 5 V to 29 V, VBAT = 3.8 V VIN = 5 V, VBAT = 3.4 V, ICHG = 280 mA VBAT 2V/div BGATE 2 V/div LDO 2 V/div IIN 200 mA/div IBAT 0.5 A/div 1 ms/div 50 µs/div Figure 5. Figure 6. PRE-CHARGE MODE TO MINIMUM OUTPUT REGULATION MODE MINIMUM OUTPUT REGULATION MODE TO CONSTANT CURRENT (CC) MODE VIN = 5 V, VBAT = 1.8 V to 3.45 V, ICHG = 467 mA VIN = 5 V, VBAT = 2.4 V to 3.6 V, ICHG = 467 mA VBAT 500 V/div VBAT 500 V/div BGATE 2 V/div BGATE 2 V/div IBAT 500 mA/div IBAT 500 mA/div 20 ms/div 20 ms/div Figure 7. 8 Figure 8. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 TYPICAL CHARACTERISTICS (continued) Using circuit in Figure 1, TA = 25°C, unless otherwise specified PRE-CHARGE TO CONSTANT VOLTAGE (CV) MODE VIN-DPM VIN 2 V/div VBAT 500 mV/div IIN 500 mA/div VIN = 5 V, VBAT = 2.8 V to 4.18 V, ICHG = 467 mA BGATE 2 V/div BGATE 2 V/div IBAT 500 mA/div VIN = 5 V with current limit of 600 mA, VBAT = 3.2 V, ICHG = 93 mA to 935 mA 20 ms/div 200 µs/div Figure 9. Figure 10. SUPPLEMENT MODE CHARGE CYCLE DEMO VOUT 2 V/div IIN 1 A/div VBAT 2 V/div BGATE 1 V/div VIN = 5 V, ICHG = 280 mA, BGATE =Enabled, CBAT = 2000 µF, No battery connected IIN 100 mA/div VOUT 2 V/div IOUT 2 A/div BGATE 2 V/div VIN = 5 V, VBAT = 3.2 V, ICHG = 935 mA, IOUT = 0 A to 2 A 20 ms/div 100 µs/div Figure 11. Figure 12. BATTERY VOLTAGE vs CHARGE CURRENT RDSON (From IN to OUT) vs JUNCTION TEMPERATURE 4.24 1.20 CV Mode Iload = 500 mA 4.23 1.00 4.22 RDSON - W VBAT - Battery Voltage - V 0.80 4.21 4.20 0.60 4.19 0.40 4.18 0.20 4.17 4.16 0 200 400 600 800 1000 0.00 -50 ICHRG - Charge Current - mA Figure 13. 0 50 100 TJ - Junction Temperature - °C 150 Figure 14. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 9 bq25060 SLUSA32 – MAY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) Using circuit in Figure 1, TA = 25°C, unless otherwise specified INPUT CURRENT LIMIT vs INPUT VOLTAGE OUTPUT VOLTAGE vs CHARGE CURRENT 4.00 1000 VBAT = 3 V 900 3.90 Dropout Thermal Regulation 3.80 700 VOUT - Output Voltage - V IINLIM - Input Current Limit - mA 800 600 500 400 300 3.70 3.60 3.50 3.40 3.30 200 3.20 100 3.10 0 4 5 6 7 8 9 10 11 External Power Path Control Mode VBAT = 3 V 3.00 0.000 VIN - Input Voltage - V 0.200 0.400 0.600 0.800 1.000 ICHRG - Charge Current - mA Figure 15. Figure 16. DETAILED FUNCTIONAL DESCRIPTION The bq25060 is a highly integrated Li-Ion linear battery charger targeted at space-limited portable applications. It operates from either a USB port or AC Adapter and charges a single-cell Li-Ion battery with up to 1A of charge current. The 30V input voltage range with input over-voltage protections supports low-cost unregulated adapters. The bq25060 has a single power output that charges the battery. The system load is connected to OUT. The low-battery system startup circuitry maintains OUT pin voltage at VOUT(REG) whenever an input source is connected. This allows the system to start-up and run whenever an input source is connected regardless of the battery voltage. The charge current is programmable up to 1A using the EN input. Additionally, a 4.9V 50mA LDO is integrated into the IC for supplying low power external circuitry. External FET Controller (BGATE) The External Power Path Control feature is implemented using the BGATE output. BGATE is also used to enable/ disable the External Power Path Control feature. When power is first applied to either VBAT or VIN on the bq25060, the BGATE output is tested. If the BGATE pin is connected to VSS, the External Power Path Control feature is disabled. In order to enable the External Power Path Control feature after it has been disabled, the battery and the input source must be removed and reconnected and BGATE must NOT be connected to VSS. With External Power Path Control enabled, BGATE is used to drive an external P-channel FET that connects the battery to the system output. The state of this FET is dependant on the battery voltage and the IC status. In discharge mode, BGATE is pulled to GND to turn the external FET on fully. During discharge mode, the output is connected directly to the battery. Discharge mode is entered under the following conditions: 1. IC disabled or no input power 2. Supplement mode When not in one of these conditions, the BGATE output is controlled by the bq25060 and changes depending on which mode is required. See the Charging Operation section for more details. 10 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 Enable/ Disable External Power Path Control When power is first applied to the bq25060, either at the IN or BAT input, the bq25060 checks the BGATE output. The device sources a small current out of BGATE for 2ms and monitors the voltage. If VBGATE is connected to ground and the voltage does not rise above logic High, the External Power Path Control feature is disabled and VLOWV is set to 2.5V. If the BGATE voltage rises above logic High, the External Power Path Control feature is enabled and VLOWV is set to 2.9V. The bq25060 only does this check when power is initially applied. Power must removed from IN and BAT and then reapplied to initiate another check. Figure 17 illustrates the startup check procedure. No Input Source or Battery Connected Input source OR Battery connected? NO YES Source Current to BGATE BGATE = VSS? YES External Power Path Control Disabled V LOWV = 2.5V NO External Power Path Control Enabled VLOWV = 2.9V Figure 17. BGATE Monitor Sequence Charging Operation The bq25060 charges a battery in 3 stages while maintaining a minimum system output. When the bq25060 is enabled by EN, the battery voltage is monitored to verify which stage of charging must be used. The bq25060 charges in precharge mode, minimum output regulation mode, or normal CC/CV mode based on the battery voltage. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 11 bq25060 SLUSA32 – MAY 2010 www.ti.com Charger Operation with External Power Path Control Mode Enabled PRECHARGE CC FAST CHARGE Maximum Charge Current CV TAPER System Voltage 4.2V IIN(LIM) 3.5V VLOWV Battery Voltage IPRECHG CHG = Hi -Z ITERM Figure 18. Typical Charging Cycle with External Power Path Control Enabled Precharge Mode (VBAT ≤ VLOWV) The bq25060 enters precharge mode when VBAT ≤ VLOWV. Upon entering precharge mode, the battery is charged with a 40mA current source and /CHG goes low. During precharge mode, VOUT is regulated to 3.5V and the battery is charged from the internal fixed 40mA current source connected to the BAT output. With BGATE connected to GND, the system output is connected to the battery and therefore the system voltage is equal to the battery voltage. Minimum Output Regulation Mode (2.9V<VBAT<3.6V) Once VBAT exceeds 2.9V, the bq25060 enters Minimum Output Regulation Mode. While 2.9V<VBAT<3.6V, VOUT is regulated to VOUT(REG) by the external FET (QBAT) while the internal FETs between IN and OUT is used to regulate the fast charge current. The total current is shared between the output load and the battery. As the system current increases, the battery charge current decreases. In order to maintain the minimum output regulation voltage VOUT(REG), the system load must be less than the input current limit. Normal CC/CV Mode Once VBAT>3.6V, QBAT is fully turned on and VOUT = VBAT + Vdrop(Q1). At this point, the bq25060 is in constant current (CC) mode where charge current is regulated using the internal FETs between IN and OUT. The VOUT voltage is not regulated. The total current is shared between the output load and the battery. Once the battery voltage charges up to VBAT(REG), the bq25060 enters constant voltage (CV) mode where VBAT is regulated to VBAT(REG) and the current is reduced. Once the input current falls below the termination threshold (ITERM) BGATE is turned off and CHG goes high impedance. The system output is regulated to 4.2V and the battery is disconnected from OUT, however supplement mode is still available. 12 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 Charger Operation With External Power Path Control Mode Disabled (BGATE = VSS) PRECHARGE CC FAST CHARGE CV TAPER VOUT(REG) IIN(LIM) Battery Current Battery and Output Voltage VLOWV CHG = Hi-Z IPRECHG ITERM Figure 19. Charging Cycle with External Power Path Control Disabled (BGATE = VSS) Precharge Mode (VBAT ≤ VLOWV) The bq25060 enters precharge mode when VBAT ≤ VLOWV. Upon entering precharge mode, CHG goes low and the input current limit is set to IPRECHARGE. With BGATE connected to GND, the system output is connected to the battery and therefore the system voltage is equal to the battery voltage. During precharge mode, the input current is regulated to 50mA and as such, only loads up to 50mA are supported. Normal CC/CV Mode Once VBAT > VLOWV, the bq25060 enters constant current (CC) mode where charge current is regulated using the internal MOSFETs between IN and OUT. The total current is shared between the output load and the battery. Once the battery voltage charges up to VBAT(REG), the bq25060 enters constant voltage (CV) mode where VBAT is regulated to VBAT(REG) and the current is reduced. Once the input current falls below the termination threshold (ITERM), CHG goes high impedance but the system remains charging and regulates the output to VBAT(REG). Programmable Input Current Limit (ISET) When the charger is enabled, and the user programmable current limit is selected by the EN input, internal circuits generate a current proportional to the input current at the ISET input. The current out of ISET is 1/1000 (±10%) of the charge current. This current, when applied to the external charge current programming resistor, R1 (Figure 1), generates an analog voltage that is regulated to program the fast charge current. Connect a resistor from ISET to VSS to program the input current limit using the following equation: K 1000A ´ W IIN_LIMIT = ISET = RISET RISET (1) IIN_LIM is programmable from 100mA to 1A. The voltage at ISET can be monitored by an external host to calculate the charging current to the battery. The input current is related to the ISET voltage using the following equation: 1000 IIN = VISET ´ RISET (2) Monitoring the ISET voltage allows for the host to calculate the actual charging current and therefore perform more accurate termination. The input current to the system must be monitored and subtracted from the current into the bq25060 which is show by VISET. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 13 bq25060 SLUSA32 – MAY 2010 www.ti.com Input Current Limit Control (EN) The bq25060 contains a 3-state that controls the input current limit. Drive EN low to program the input current limit to the user defined value programmed using ISET. Drive EN high to place the bq25060 in USB suspend mode. In USB suspend mode, the input current into bq25060 is reduced and the external battery FET is held on (BGATE pulled to GND). Leaving EN unconnected or connected to a high impedance source programs the USB500 input current limit. Table 1. EN Input Definition EN MODE Low ISET Hi-Z USB500 Hi USB Suspend Input Over Voltage Protection The bq25060 contains an input over voltage protection circuit that disables the LDO output and charging when the input voltage rises above VOVP. This prevents damage from faulty adapters. The OVP circuitry contains an deglitch that prevents ringing on the input from line transients from tripping the OVP circuitry falsely. If an adapter with an output greater than VOVP is plugged in, the IC completes power up and then shuts down if the voltage remains above VOVP after the deglitch. The LDO remains off and charging remains disabled until the input voltage falls below VOVP. Under-Voltage Lockout (UVLO) The bq25060 remains in power down mode when the input voltage is below the under-voltage lockout threshold (VUVLO). During this mode, the control input (EN) is ignored. The LDO, the charge FET connected between IN and OUT are off and the status output (CHG) is high impedance. Once the input voltage rises above VUVLO, the internal circuitry is turned on and the normal operating procedures are followed. Input DPM Mode (VIN-DPM) The input current into the bq25060 includes all load currents, i.e. the system load, LDO load, and battery charge current. The total input current is regulated by the input current limit of the bq25060. The bq25060 utilizes the VIN-DPM mode for operation from current-limited input sources. WIth VIN-DPM enabled, the input voltage is monitored. If VIN falls to VIN-DPM, the input current limit is reduced to prevent the input voltage from falling further. This prevents the bq25060 from crashing poorly designed or incorrectly configured USB sources. Figure 20 shows the VIN-DPM behavior to a current limited source. In this figure the input source has a 200mA current limit and the device has started up with the 285mA current limit. 14 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 Input voltage falls due to adapter current limit VIN 2 V/div Input current limit is reduced to prevent crashing the input supply ILIM 200 mA/div 1 ms/div Figure 20. bq25060 VIN-DPM External NTC Monitoring (TS) The bq25060 features a flexible, voltage based external battery pack temperature monitoring input. The TS input connects to the NTC thermistor in the battery pack to monitor battery temperature and prevent dangerous over-temperature conditions. During charging, the voltage at TS is continuously monitored. If, at any time, the voltage at TS is outside of the operating range (VCOLD to VHOT), charging is suspended. When the voltage measured at TS returns to within the operation window, charging is resumed. When charging is suspended due to a battery pack temperature fault, the CHG output goes to high impedance. The temperature thresholds are programmed using a resistor divider from LDO to GND with the NTC thermistor connected to the center tap from TS to GND. See Figure 5 for the circuit example. The value of R1 and R2 are calculated using the following equations: -R2 ´ RHOT ´ (0.125 - 1) R1 = 0.125 ´ (R2 + RHOT) (3) R2 = -RHOT ´ RCOLD ´ (0.125 - 0.250) RHOT ´ 0.250 ´ (0.125 - 1) + RCOLD ´ 0.125 ´ (1 - 0.250) (4) RHOT is the expected thermistor resistance at the programmed hot threshold; RCOLD is the expected thermistor resistance at the programmed cold threshold. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 15 bq25060 SLUSA32 – MAY 2010 www.ti.com LDO R1 V COL D TS PACK+ TEM P + V H OT R2 PACK - + bq25060 Figure 21. NTC Monitoring Function 50mA LDO (LDO) The LDO output of the bq25060 is a low dropout linear regulator (LDO) that supplies up to 50mA while regulating to VLDO. The LDO is active whenever the input voltage is above VUVLO and below VOVP. It is not affected by the EN input. The LDO output is used to power circuitry such as USB transceivers in dead battery conditions. This allows the user to operate the product immediately after plugging the adapter in, instead of waiting for the battery to charge to useable levels. Charge Status Indicator (CHG) The bq25060 contains an open drain CHG output that indicates charge cycles and faults. When charging a battery in precharge, fastcharge, or CV mode, the CHG output is pulled to VSS. Once the BAT output reaches regulation and the charge current falls below the termination threshold, CHG goes to high impedance to signal the battery is fully charged. The CHG output goes low during battery recharge cycles to signal the host to monitor for termination. Additionally, CHG notifies the host if a NTC temperature fault has occurred. CHG goes to high impedance if a TS fault occurs. Connect CHG to the required logic level voltage through a 1kΩ to 100kΩ resistor to use the signal with a microprocessor. ICHG must be below 5mA. Thermal Regulation and Thermal Shutdown The bq25060 contains a thermal regulation loop that monitors the die temperature continuously. If the temperature exceeds TJ(REG), the device automatically reduces the charging current to prevent the die temperature from increasing further. In some cases, the die temperature continues to rise despite the operation of the thermal loop, particularly under high VIN conditions. If the die temperature increases to TJ(OFF), the IC is turned off. Once the device die temperature cools by TJ(OFF-HYS), the device turns on and returns to thermal regulation. Continuous over-temperature conditions result in the pulsing of the load current. If the junction temperature of the device exceeds TJ(OFF), the charge FET is turned off. The FET is turned back on when the junction temperature falls below TJ(OFF) – TJ(OFF-HYS). Note that these features monitor the die temperature of the bq25060. This is not synonymous with ambient temperature. Self heating exists due to the power dissipated in the IC because of the linear nature of the battery charging algorithm. 16 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 bq25060 www.ti.com SLUSA32 – MAY 2010 APPLICATION INFORMATION Selection of Input/ Output Capacitors In most applications, all that is needed is a high-frequency decoupling capacitor on the input power pin. For normal charging applications, a 0.1µF ceramic capacitor, placed in close proximity to the IN pin and GND pad works best. In some applications, depending on the power supply characteristics and cable length, it may be necessary to increase the input filter capacitor to avoid exceeding the OVP voltage threshold during adapter hot plug events where the ringing exceeds the deglitch time. The charger in the bq25060 requires a capacitor from OUT to GND for loop stability. Connect a 1µF ceramic capacitor from OUT to GND close to the pins for best results. More output capacitance may be required to minimize the output droop during large load transients. Connect a 0.1µF ceramic capacitor from BAT to GND to eliminate the potential ESD strike. The LDO also requires an output capacitor for loop stability. Connect a 0.1µF ceramic capacitor from LDO to GND close to the pins. For improved transient response, this capacitor may be increased. bq25060 Charger Design Example The following sections provide an example for determining the component values for use with the bq25060. Requirements: Refer to Figure 1 and Figure 2 for Schematics of the Design Example. • Supply voltage = 4.35~10.2V • Input current limit is 0.5A • Set 0°C~45°C operating range Calculations Input Current Limit Control (EN): Drive EN low to program the input current limit to the user defined value programmed using ISET. See Table 1 for other detail EN pin options. Program the input current Iimit (ISET): Connect a resistor, RISET, from ISET to VSS to program the input current. The RISET is determined by: KISET 1000A ´ W = = 2000W RISET = IIN_LIMIT IIN_LIMIT (5) Set 0°C to 45°C charger operating temperature range (TS): The value of R1 and R2 are: -RHOT ´ RCOLD ´ (0.125 - 0.250) R2 = = 11.3kW RHOT ´ 0.250 ´ (0.125 - 1) + RCOLD ´ 0.125 ´ (1 - 0.250) -R2 ´ RHOT ´ (0.125 - 1) R1 = = 24.0kW 0.125 ´ (R2 + RHOT) (6) (7) RHOT: 4.911kΩ, the resistor value of Semitec NTC 103AT-2 at 45°C; RCOLD: 27.28kΩ, the resistor value of Semitec NTC 103AT-2 at 0°C. External FET Controller (BGATE): On Figure 1, BGATE drives an external P-channel FET that connects the battery to the system output. When power is first applied to either VBAT or VIN, the device sources a typical 50µA small current out of BGATE and monitors the voltage. If BGATE voltage is higher than logic high in first 1ms and stays high for at least 2ms, the external power path control feature is enabled and VLOWV is set to 2.9V. The OUT pin maintains voltage at VOUT(REG). In Figure 2, BGATE is connected to Vss. The external power path control feature is disabled and VLOWV is set to 2.5V. The OUT pin shorts to BAT. Status Indicators (CHG): The CHG pin is open drain output. If used, CHG pin should be pulled up via a resistor and possibly a LED to a power source. If monitored by a host, the host pull-up power source should be used. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 17 bq25060 SLUSA32 – MAY 2010 www.ti.com Thermal Considerations The bq25060 is packaged in a thermally enhanced QFN package. The package includes a thermal pad to provide an effective thermal contact between the IC and the printed circuit board (PCB). Full PCB design guidelines for this package are provided in the application note entitled: QFN/SON PCB Attachment Application Note (SLUA271). The most common measure of package thermal performance is thermal impedance (qJA ) measured (or modeled) from the chip junction to the air surrounding the package surface (ambient). The mathematical expression for qJA is: T - TA qJA = J PD (8) Where: TJ = chip junction temperature TA = ambient temperature PD = device power dissipation Factors that can greatly influence the measurement and calculation of qJA include: • Whether or not the device is board mounted • Trace size, composition, thickness, and geometry • Orientation of the device (horizontal or vertical) • Volume of the ambient air surrounding the device under test and airflow • Whether other surfaces are in close proximity to the device being tested The device power dissipation, PD, is a function of the charge rate and the voltage drop across the internal PowerFET. It can be calculated from the following equation when a battery pack is being charged: P D = (VIN - VO UT ) ´ IOUT (9) Due to the charge profile of Li-Ion batteries the maximum power dissipation is typically seen at the beginning of the charge cycle when the battery voltage is at its lowest. See the charging profile, Figure 18. If the board thermal design is not adequate the programmed fast charge rate current may not be achieved under maximum input voltage and minimum battery voltage, as the thermal loop can be active, effectively reducing the charge current to avoid excessive IC junction temperature PCB Layout Considerations It is important to pay special attention to the PCB layout. The following provides some guidelines: • To obtain optimal performance, the decoupling capacitor from IN to GND (thermal pad) and the output filter capacitors from OUT to GND (thermal pad) should be placed as close as possible to the bq25060, with short trace runs to both IN, OUT and GND (thermal pad). • All low-current GND connections should be kept separate from the high-current charge or discharge paths from the battery. Use a single-point ground technique incorporating both the small signal ground path and the power ground path. • The high current charge paths into IN pin and from the OUT pin must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces. • The bq25060 is packaged in a thermally enhanced SON package. The package includes a thermal pad to provide an effective thermal contact between the IC and the printed circuit board (PCB); this thermal pad is also the main ground connection for the device. Connect the thermal pad to the PCB ground connection. Full PCB design guidelines for this package are provided in the application note entitled: QFN/SON PCB Attachment Application Note (SLUA271). 18 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq25060 PACKAGE OPTION ADDENDUM www.ti.com 17-May-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BQ25060DQCR ACTIVE WSON DQC 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ25060DQCT ACTIVE WSON DQC 10 250 CU NIPDAU Level-2-260C-1 YEAR Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 20-Jul-2010 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ25060DQCR WSON DQC 10 3000 330.0 12.4 2.3 3.3 0.85 4.0 12.0 Q1 BQ25060DQCT WSON DQC 10 250 180.0 12.4 2.3 3.3 0.85 4.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 20-Jul-2010 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ25060DQCR WSON DQC 10 3000 346.0 346.0 29.0 BQ25060DQCT WSON DQC 10 250 190.5 212.7 31.8 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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