EFA720AV-CP083 Low Distortion GaAs Power FET UPDATED 01/30/2006 FEATURES ● EFA • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY 720AV • All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB PAE PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz MIN TYP 33.5 35.5 35.5 17.0 12.0 15.5 MAX UNITS dBm dB 36 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1200 2040 GM Transconductance VDS = 3 V, VGS = 0 V 840 1100 VP Pinch-off Voltage VDS = 3 V, IDS = 10 mA -2.0 % 2640 mA mS -3.5 V BVGD Drain Breakdown Voltage IGD = 7.2 mA -13 -15 V BVGS Source Breakdown Voltage IGS = 7.2 mA -7 -14 V RTH* Thermal Resistance o 6* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -5V 32.4 mA 5.4 mA 32.5 dBm 175oC -65/175oC 20 W 8V -3V 10.8 mA 1.8 mA @ 3dB Compression 175oC -65/175oC 20 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised January 2006