EPA160A-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY D G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS MIN TYP 29.0 31.0 31.0 11.5 8.0 PAE Output Power at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Gain at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Power Added Efficiency at 1dB Compression Vds=8 V, Ids=50% Idss f=12GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 290 480 Gm Transconductance Vds=3V, Vgs=0V 320 500 Vp Pinch-off Voltage Vds=3V, Ids=4.5mA P1dB G1dB 9.5 MAX dBm dB 41 -1.0 UNIT % 660 mA mS -2.5 V BVgd Drain Breakdown Voltage Igd=1.6mA -13 -15 V BVgs Source Breakdown Voltage Igs=1.6mA -7 -14 V 33* ºC/W Rth • PARAMETERS/TEST CONDITIONS Thermal Resistance (Au-Sn Eutectic Attach) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS PARAMETERS Drain-Source Voltage Vds Gate-Source Voltage Vgs Drain Current Ids Forward Gate Current Igsf Input Power Pin Channel Temperature Tch Storage Temperature Tstg Total Power Dissipation Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. CONTINUOUS1,2 8V -3V 435mA 14mA @ 3dB Compression 150 oC -65 to +150 oC 3.4W Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2005 EPA160A-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 S-PARAMETERS 8V, ½ Idss FREQ (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 --- S11 --MAG ANG 0.897 0.8556 0.8463 0.8519 0.858 0.8508 0.8567 0.8622 0.8786 0.8892 0.9018 0.9046 0.8958 0.8898 0.9201 0.9115 0.921 0.9757 0.9157 0.887 -97.83 -138.32 -161.09 -175.22 174.42 162.41 148.39 140.8 133.15 121.59 110.17 103.54 100.63 91.61 79.78 72.91 76.49 69.22 54.5 46.41 --- S21 --MAG ANG 12.5419 7.7689 5.4611 4.1206 3.3447 2.8519 2.4307 2.1652 1.8723 1.6132 1.4439 1.3256 1.1794 1.0351 0.9638 0.8571 0.8482 0.8496 0.7847 0.7575 118.91 90.57 71.1 55.4 41.57 28.46 15.06 1.92 -10.15 -21.93 -34.13 -46.47 -56.99 -65.22 -76.98 -88.86 -96.06 -105.81 -117.28 -129.46 --- S12 --MAG ANG 0.0319 0.0388 0.0401 0.0391 0.0372 0.037 0.0344 0.0338 0.0333 0.0319 0.0296 0.0298 0.0319 0.0327 0.0344 0.0329 0.0386 0.0421 0.0415 0.0449 38.76 17.85 7.73 0.48 -5.8 -9.6 -12.94 -16.52 -18.18 -26.17 -28.49 -32.38 -33 -39.8 -44.85 -50.1 -53.04 -60.11 -68.14 -76.32 --- S22 --MAG ANG 0.3246 0.3218 0.3355 0.3633 0.4116 0.4552 0.4795 0.4727 0.5245 0.589 0.5945 0.5934 0.6502 0.7159 0.6957 0.6575 0.7777 0.7903 0.774 0.7413 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -79.02 -106.48 -120.16 -132.53 -142.91 -150.15 -154.4 -168.28 178.68 174.2 167.81 153.54 139.78 139.11 135.32 123.22 108.19 105.94 107.95 91.66 page 2 of 2 Revised February 2005