ETC EFA080A-70

Excelics
EFA080A-70
DATA SHEET
Low Distortion GaAs Power FET
44
19
4
20
S
S
70
D
40
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+23.5dBm TYPICAL OUTPUT POWER
7.0 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
180 Min.
(All Leads)
•
•
•
•
•
•
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
MIN
TYP
Output Power at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
21.5
23.5
23.5
7.0
4.5
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
130
210
Gm
Transconductance
Vds=3V, Vgs=0V
90
120
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
-10
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-6
-14
V
Rth
Thermal Resistance
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
6.0
MAX
dBm
dB
%
30
-2.0
300
-3.5
135*
MAXIMUM RATINGS AT 25OC
PARAMETERS
ABSOLUTE1
mA
mS
* Overall Rth depends on case mounting.
SYMBOLS
UNIT
CONTINUOUS2
Drain-Source Voltage
8V
5V
Vds
Gate-Source Voltage
-5V
-4V
Vgs
Drain Current
Idss
185mA
Ids
Forward Gate Current
20mA
4mA
Igsf
Input Power
22dBm
@ 3dB Compression
Pin
Channel Temperature
175oC
150 oC
Tch
Storage Temperature
-65/175oC
-65/150 oC
Tstg
Total Power Dissipation
1.1W
0.9W
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA080A-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
--- S11 --MAG ANG
0.909 -42.3
0.826 -77.0
0.766 -104.2
0.724 -128.4
0.691 -148.9
0.672 -163.0
0.653 -178.5
0.639 167.4
0.645 144.9
0.658 126.6
0.655 116.0
0.667 101.8
0.719
84.9
0.752
70.5
0.754
57.6
0.763
43.0
0.760
32.5
0.779
25.1
0.788
10.8
0.818
-1.5
0.833
-8.6
0.808 -17.7
0.803 -34.1
0.820 -48.4
0.788 -59.1
0.782 -73.7
8V, 1/2 Idss
--- S21 ----- S12 --MAG ANG
MAG ANG
6.038 146.2
0.032
59.9
5.067 118.9
0.049
45.3
4.189
96.7
0.059
33.8
3.590
77.3
0.064
26.9
3.129
59.7
0.068
21.6
2.766
44.3
0.072
18.6
2.487
29.4
0.075
15.9
2.266
14.8
0.079
14.7
2.073
-1.1
0.087
11.4
1.885 -16.7
0.096
5.8
1.793 -31.1
0.109
-0.3
1.690 -46.7
0.124
-7.8
1.512 -62.2
0.133 -17.2
1.334 -76.1
0.138 -25.8
1.230 -91.4
0.148 -37.2
1.113 -108.5
0.152 -49.6
0.951 -120.4
0.153 -55.6
0.886 -129.9
0.169 -66.8
0.815 -144.0
0.166 -77.8
0.742 -158.2
0.169 -89.6
0.680 -169.6
0.171 -99.0
0.639 179.7
0.181 -108.3
0.601 164.5
0.188 -122.5
0.550 147.3
0.191 -139.2
0.524 135.1
0.202 -151.7
0.538 121.1
0.236 -164.9
--- S22 --MAG
ANG
0.452
-26.1
0.405
-47.4
0.383
-64.2
0.366
-77.3
0.338
-90.8
0.317 -108.5
0.322 -122.3
0.306 -136.5
0.308 -148.4
0.317 -166.1
0.337
171.2
0.366
150.2
0.387
131.4
0.419
116.3
0.480
98.5
0.527
78.5
0.535
66.4
0.584
58.5
0.627
45.7
0.679
32.6
0.684
22.4
0.671
15.3
0.659
-0.8
0.662
-20.3
0.666
-31.0
0.639
-45.2