FUJI MS838C04

http://www.fujisemi.com
MS838C04 (40V/30A)
FUJI Diode
Schottky Barrier Diode
Features
• Low VF
• Super high speed switching
• High reliability by planer design
Outline Drawings [mm]
Connection diagram
TFP
838C04
838C04
Applications
• High speed power switching
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Symbols
Conditions
VRRM
Ratings
Units
40
V
IO
Square wave duty =1/2
Tc =111˚C
30 *
A
I FSM
Sine wave, 10ms 1shot
180
A
Operating junction temperature
Tj
150
˚C
Storage temperature
Tstg
-40 to +150
˚C
Units
*Out put current of center tap full wave connection.
**Rating per element
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Symbols
Conditions
Maximum
Forward voltage***
VF
IF = 12.5 A
0.53
V
Reverse current***
IR
VR =VRRM
8
mA
Thermal resistance
Rth(j-c)
Junction to case
1.2
˚C/W
Ratings
Units
0.8
g
***Rating per element
Mechanical characteristics
Item
Conditions
Approximate mass
1
MS838C04 (40V/30A)
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
Tj=150°C
Tj=125°C
Tj=125°C
Tj=100°C
Tj=25°C
Tj=100°C
IR Reverse Current (mA)
IF Forward Current (A)
Tj=150°C
Tj= 25°C
VR Reverse Voltage (V)
VF Forward Voltage (V)
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
DC
360
360
I0
Reverse Power Dissipation
Square wave λ =60°
Square wave λ =120°
Sine wave λ =180°
Square waveλ =180°
DC
α=180°
PR
WF
Forward Power Dissipation
(W)
(W)
VR
Per 1element
Io
Average output Current
VR
(A)
2
Reverse Voltage
(V)
MS838C04 (40V/30A)
FUJI Diode
http://www.fujisemi.com
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (typ.)
10000
DC
Junction Capacitance (pF)
(°C)
1000
Case Temperature
Sine wave λ=180°
Square wave λ=180°
100
Tc
Cj
Square wave λ=120°
360
Square wave λ=60°
I0
VR=20V
10
Io
Average Output Current (A)
1
10
VR
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
IFSM Peak Half - Wave Current
(A)
Surge Capability (max.)
Number of Cycles at 50Hz
3
Reverse Voltage (V)
MS838C04 (40V/30A)
FUJI Diode
http://www.fujisemi.com
Transient Thermal Impedance (max.)
Transient Thermal Impedance
(°C/W)
Rth j-c: 1.2 °C/W
t
Time
(sec)
4
MS838C04 (40V/30A)
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. A lthough Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. T
he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
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