FUJI TS862C08R

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TS862C08R
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Conditions
Ratings
Units
VRRM
-
80
V
Io
50Hz square wave duty =1/2
Tc =126 ˚C
10*
A
IFSM
125
A
Tj
Sine wave, 10ms 1shot
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Note* Out put current of center tap full wave connection.
Note**Rating per element
Electrical characteristics
Item
(at Ta=25˚C unless otherwise specified.)
Maximum
Units
VF
IF = 5 A
0.76
V
Reverse current***
IR
VR =VRRM
150
µA
Thermal resistance
Rth(j-c)
Junction to case
2.0
˚C/W
Conditions
Maximum
Units
-
1.6
g
Forward voltage***
Symbols
Note*** Rating per element
Mechanical characteristics
Item
Approximate mass
1
TS862C08R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
2
TS862C08R
FUJI Diode
http://www.fujisemi.com
Forward Characteristic
Reverse Characteristic
(typ.)
(typ.)
105
Tj=150℃
104
Tj=125℃
10
(A)
Tj=100℃
(μA)
10
Reverse Current
Forward Current
Tj=150℃
Tj=125℃
1
3
Tj=100℃
IF
Tj=25℃
102
Tj= 25℃
IR
10
1
0.1
100
0.01
0.0
10-1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
20
1.0
Forward Voltage (V)
VF
50
60
70
80
90
(V)
4
DC
360°
6
360°
I0
VR
λ
(W)
α
5
Power Dissipation
Square wave λ=60°
Square wave λ=120°
4
Sine wave λ=180°
Square wave λ=180°
DC
3
3
α=180°
2
Reverse
(W)
40
Reverse Voltage
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
7
Forward Power Dissipation
30
VR
PR
WF
2
1
1
Per 1element
0
0
1
Io
2
3
4
Average Forward Current
5
0
6
0
(A)
10
20
VR
3
30
40
50
Reverse Voltage
60
70
(V)
80
90
TS862C08R
FUJI Diode
http://www.fujisemi.com
Current Derating
Junction Capacitance Characteristic (max.)
(Io-Tc) (max.)
1000
160
150
Tc
Sine wave λ=180°
130
Square wave λ=180°
Square wave λ=120°
120
Square wave λ=60°
Junction Capacitance (pF)
DC
100
Cj
Case Temperature
(℃)
140
110
360°
100
I0
VR=40V
λ
90
0
5
Io
10
Average Output Current
10
15
1
(A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
100
IFSM
Peak Half - Wave Current
(A)
1000
10
1
10
100
Number of Cycles at 50Hz
4
10
100
VR
Reverse Voltage (V)
1000
TS862C08R
FUJI Diode
http://www.fujisemi.com
Surge Current Ratings (max.)
IFSM Peak HAlf-Wave Current
(A)
1000
100
10
1
10
100
1000
t Time (ms) Sinewave
Transient Thermal Impedance (max.)
1
Transient Thermal Impedance
(°C/W)
10
Rth(j-c):2.0°C/W
0
10
-1
10
-2
10
-1
0
10
1
10
t
Time
5
10
(sec)
2
10
TS862C08R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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may arise from the use of the applications described herein.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
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6