MBR5045 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃ operation junction temperature * reverse avalanche behavior Mechanical Data: MBR5045 passivated Silicon Chip Dimension(mil): 200X200 mil Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : AlAg Bottom ( Cathode) : TiNiAg Forward Current (A): Reverse Voltage (V): Type MBR5045 50A >45V VF(V)@125 C IRM@VRMM Chip VF(V)@25 C size(mil) at If =50A at If =50A at 25 C 200X200 600mV 550mV 0,6mA * expected value for recommended assembling with both side soldering Typical device :1N6392 Note: Other voltages & Top Metal AL are available