SB 1XX - 0.9 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃ operation junction temperature * reverse avalanche behavior Mechanical Data: SB 1XX passivated Silicon Chip Demension(mm) 0.9x0.9 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 1A Reverse Voltage (V):23, 43, 100 V Type Chip VR(V) size(mm) SB120 SB140 SB1100 0.9x0.9 0.9x0.9 0.9x0.9 23V 43 V 100 V Note: Other voltages, Vf & Top Metal AL are available VF(V)@25 C IRM@VRMM at If=1A at 25 C 400mV 500mV 730mV 0,5mA 0,5mA 0,5mA