HAMAMATSU S10811

CCD area image sensors
S10814
S10811
Front-illuminated FFT-CCD for X-ray imaging
The S10814 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S10814 has about 2 mega
(1700 × 1200) pixels, each of which is 20 × 20 μm in size. The FOP (fiber optic plate) used as an input window is as thin as 1.5
mm, making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to have
high X-ray sensitivity and high resolution (20 Lp/mm).
The S10811 is an easy-to-use X-ray imaging module using the S10814, with added functions such as a cable assembly and X-ray
trigger circuit.
Features
Applications
X-ray monitoring photodiode incorporated
Intra-oral X-ray imaging in dental diagnosis
Compact size
General X-ray imaging
High dynamic range: 12-bit
Non-destructive inspection
Long-term stability
For use under 100000 shots
(60 kVp, 30 mR X-ray irradiation)
These products are components for incorporation into medical
device.
Resolution: 20 Lp/mm
1700 (H) × 1200 (V) pixel format
Pixel size: 20 × 20 μm
Coupled with FOS for X-ray imaging
100% fill factor
Low dark signal
Low readout noise
MPP operation
AC/DC X-ray source adapted
General ratings
Parameter
CCD structure
Fill factor
Cooling
Number of pixels
Number of active pixels
Pixel size
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Dimensions
Reliability
Window
S10814
S10811
Full frame transfer
100 %
Non-cooled
1708 (H) × 1202 (V)
1700 (H) × 1200 (V)
20 (H) × 20 (V) μm
34 (H) × 24 (V) mm
2 phases
2 phases
Emitter follower without load resistance
37.8 (H) × 26.5 (V) mm
42.3 (H) × 30.0 (V) mm
100000 shots at 60 kVp, 30 mR
FOS (scintillator on 1.5 mm FOP)
www.hamamatsu.com
1
CCD area image sensors
S10814, S10811
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Tstg
Topr
VOD
VRD
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Vcc
Min.
-20
0
-0.5
-0.5
-15
-15
-15
-15
-15
-15
0
Typ.
-
Max.
+70
+40
+20
+18
+15
+15
+15
+15
+15
+15
+7
Unit
°C
°C
V
V
V
V
V
V
V
V
V
Min.
12
12
-0.5
0
-9
0
-9
0
-9
0
-9
0
-9
4.75
Typ.
15
13
2
0
3
-8
3
-8
3
-8
3
-8
3
-8
5
Max.
14
5
6
-7
6
-7
6
-7
6
-7
6
-7
5.25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
+5 V power supply voltage
Symbol
VOD
VRD
VOG
Vss
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VsGH
VsGL
VRGH
VRGL
VTGH
VTGL
Vcc
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency*1
Vertical shift register capacitance
S10814
Horizontal shift register
capacitance
S10811
S10814
Summing gate capacitance
S10811
S10814
Reset gate capacitance
S10811
S10814
Transfer gate capacitance
S10811
Charge transfer efficiency*2
DC output level*3
Output impedance*3
Power dissipation*3 *4
S10814
+5 V power supply current
S10811
*1:
*2:
*3:
*4:
Symbol
fc
CP1V, CP2V
CP1H, CP2H
CSG
CRG
CTG
CTE
Vout
Zo
P
Icc
Min.
0.99995
5
-
Typ.
1
70000
400
600
20
220
20
220
250
450
0.99998
8
500
75
1
2
Max.
11
-
Unit
MHz
pF
pF
pF
pF
pF
V
Ω
mW
mA
In case of the S10814, maximum frequency strongly depends on a peripheral circuit and cable length.
Measured at half of the full well capacity. CTE is defined per pixel.
VOD=15 V
Power dissipation of the on-chip amplifier
2
CCD area image sensors
S10814, S10811
Electrical and optical characteristics (Ta=25 °C, VOD=15 V, unless otherwise noted)
Parameter
Vertical
Horizontal
Full well capacity
Summing
CCD node sensitivity*5
Dark current (MPP mode)*6
Ta=25 °C
Readout noise*7
Ta=-40 °C
Dynamic range*8
X-ray response non-uniformity*9 *10
White spots
Point
12
defects*
Black spots
Blemish*11
Cluster defects*13
Column defects*14
X-ray resolution*9
Symbol
Fw
Sv
DS
Nr
DR
XRNU
ΔR
Min.
100
1.0
15
Typ.
200
300
600
1.4
250
90
60
3333
±10
20
Max.
2500
±30
20
20
3
1
-
Unit
keμV/ee-/pixel/s
e- rms
%
Lp/mm
*5: VOD=15 V, RL (load resistance of emitter follower)=1 kΩ
*6: Dark signal doubles for every 5 to 7 °C.
*7: Operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s)
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity
*13: Continuous 2 to 9 point defects
3
CCD area image sensors
S10814, S10811
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Pixel format
Left ← Horizontal direction → Right
Blank
2
Optical
black
2
Isolation
Effective
Isolation
1
1700
1
Optical
black
0
Blank
2
Top ← Vertical direction → Bottom
Isolation
Effective
Isolation
1
1200
1
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CCD area image sensors
S10814, S10811
On-board circuit
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CCD area image sensors
S10814, S10811
Timing chart
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P1V, P2V, TG
P1H, P2H
SG
RG
TG-P1H
Parameter
Pulse width*15
Rise and fall times
Pulse width
Rise and fall times*15
Duty ratio
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Overlap time
Symbol
tpwv
tprv, tpfv
tpwh
tprh, tpfh
tpws
tprs, tpfs
tpwr
tprr, tpfr
tovr
Min.
30
200
100
5
100
3
10
3
18
Typ.
60
500
50
500
50
50
36
Max.
-
Unit
μs
ns
ns
ns
%
ns
ns
%
ns
ns
μs
*15: The clock pulses should be overlapped at 50% of maximum amplitude.
6
CCD area image sensors
S10814, S10811
Dimensional outlines (unit: mm)
S10814
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* The shield of cable and the shroud of MDR connector are short-circuited.
Take due care of EMC and ESD when connected to 0 V reference and the ground.
7
CCD area image sensors
S10814, S10811
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Pin connections
S10814
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Symbol
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
Description
Analog power +5 V
Trigger A output
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Remark
Should be opened
Reset gate
Reset drain
Output transistor drain
Signal output
Ground
Transfer gate
CCD vertical register clock-2
CCD vertical register clock-1
8
CCD area image sensors
S10814, S10811
S10811
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
GND
Vcc
SG
Trigger B
RG
NC
Reserve
NC
RD
NC
OD
NC
OUT
NC
GND
NC
P1V
Reserve
Reserve
P2H
NC
P1H
NC
GND
NC
RD
NC
OD
NC
GND
NC
OUT
NC
P2V
NC
TG
Description
Ground
+5 V power supply
Summing gate
Trigger B output
Reset gate
Remark
Same timing as P2H
Should be opened
Reset drain
Output transistor drain
Sensor output
Ground
CCD vertical register clock-1
Should be opened
Should be opened
CCD horizontal register clock-2
CCD horizontal register clock-1
Ground
Reset drain
Output transistor drain
Ground
Sensor output
CCD vertical register clock-2
Transfer gate
Same timing as P2V
9
CCD area image sensors
S10814, S10811
Precautions
Electrostatic countermeasures
Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth
ring, in order to prevent electrostatic damage due to electrical charges from friction.
· Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
· Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
· Ground the tools used to handle these sensors, such as tweezers and soldering irons.
·
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of
damage that occurs.
Operating environment
This product is subject to use in an ordinary room environment such as several thousand lux in the intensity of illumination; excessive illumination during diagnosis with X-ray imaging may cause malfunction.
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Cat. No. KMPD1124E02 Dec. 2010 DN