IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS (Fiber Optic plate with Scintillator) to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close proximity to form a long and narrow sensor format. Effective size of each active area is 73.728 (H) × 6.144 (V) mm2, so the overall active area length of the three chips is up to 220 mm in length. Each CCD chip has 1536 × 128 pixels and the pixel size is 48 × 48 µm. When used in TDI operation mode which is a special feature of this CCD image sensor, even X-ray images of a moving object can be clearly acquired, making S8658-01 ideal for non-destructive inspection of products carried on a belt conveyor, etc. Features Applications l FFT-CCD coupled with FOS for X-ray imaging l 1536 (H) × 128 (V) pixel format l Pixel size: 48 × 48 µm l Slit-like image of 220 mm long by aligning 3 CCD chips together l Coupled with FOS for X-ray imaging l TDI (Time Delay Integration) operation l 100 % fill factor l Wide dynamic range l Low dark current l MPP operation l General X-ray imaging l Non-destructive inspection l Dental panorama, cephalo ■ Selection guide Type No. Cooling S8658-01 Non-cooled Note) As an input window, FOS is suited to S8658-01. Number of total pixels 1536 × 128 Number of active pixels 1536 × 128 Active area [mm (H) × mm(V)] 73.728 × 6.144 ■ General ratings Parameter CCD structure X-ray sensitive area Fill factor Number of active pixels Pixel size CCD active area Vertical clock phase Horizontal clock phase Output circuit X-ray resolution Total dose irradiation Package W indow *1: Number of active pixels per chip. Three chips are used. Specification Full frame transfer or TDI 220 × 6 mm 100 % 1 1536 (H) × 128 (V) * 48 (H) × 48 (V) µm 1 73.728 (H) × 6.144 (V) mm * 2 phase and 2 line 2 phase and 2 line Two-stage MOSFET source follower with load resistance 4 to 6 Lp/mm at 60 kVp, 20 µGy 50 Gy max. 60 pin ceramic package FOS (Fiber Optic plate with Scintillator) 1 CCD area image sensor S8658-01 ■ Absolute maximum ratings (Ta=25 °C) Parameter Storage temperature Operating temperature OD voltage RD voltage ISV voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Tstg Topr V OD V RD V ISV V IGV V IGH V SG V OG V RG V TG V P1AV , V P2AV V P1BV , V P2BV V P1AH , V P2AH V P1BH , V P2BH Min. -20 0 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 Typ. - Max. +70 +40 +20 +18 +18 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V -15 - +15 V -15 - +15 V Symbol V OD V RD V OG V SSA V SSD V ISV V IGV V IGH V P1AVH , V P2AVH V P1BVH , V P2BVH V P1AVL, V P2AVL V P1BVL, V P2BVL V P1AHH , V P2AHH V P1BHH , V P2BHH V P1AHL, V P2AHL V P1BHL, V P2BHL V SGH V SGL V RGH V RGL V TGH V TGL Min. 12 12 -0.5 -5 -8 -8 Typ. 15 13 2 0 0 V RD 0 0 Max. 18 14 5 - Unit V V V V V 0 3 6 -9 -8 -7 0 3 6 -9 -8 -7 0 -9 0 -9 0 -9 3 -8 3 -8 3 -8 6 -7 6 -7 6 -7 ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate Horizontal input gate Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low V V V V V V ■ Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Reset clock frequency Symbol fc frg C P1AV , C P2AV Vertical shift register capacitance C P1BV, C P2BV C P1AH , C P2AH Horizontal shift register capacitance C P1BH , C P2BH Summing gate capacitance C SG Reset gate capacitance C RG Transfer gate capacitance C TG Transfer efficiency CTE DC output level Vout Output impedance Zo Power dissipation P *2: Measured at half of the full well capacity. CTE is defined per *3: V OD =15 V. *4: Power dissipation of the on-chip amplifier (each chip). 2 Remark *2 *3 *3 *3, *4 pixel. Min. - Typ. 2 2 Max. 4 4 Unit MHz MHz - 15000 - pF - 500 - pF 0.99995 5 - 15 10 500 0.99999 8 500 60 11 - pF pF pF V Ω mW CCD area image sensor S8658-01 ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Remark Min. Typ. Max. Saturation output voltage Vsat Fw × Sv Vertical 600 1200 Full well capacity Fw Horizontal 600 1200 Summing 600 1200 CCD node sensitivity Sv *5 0.45 0.6 Dark current (MPP mode) DS *6 8 24 90 Ta=25 °C Nr *7 Readout noise 60 120 Ta=-40 °C Dynamic range DR *8 5000 20000 X-ray response non-uniformity XRNU *9, *10 ±10 ±30 Point White spots 10 defects Black spots 10 Blemish *11 12 Cluster defects * 0 Column defects *13 0 X-ray resolution ∆R 4 6 *5: VOD=15 V. *6: Dark current doubles for every 5 to 7 °C. *7: Operating frequency is 2 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *10: XRNU (%) = Noise / Signal × 100 Noise: Fixed pattern noise (peak to peak) Measuring region that is within 220.0 mm (H) × 6.0 mm (V) (refer to dimensional outline) *11: White spots > 20 times of typ. dark signal (8 ke /pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *12: continuous 2 to 9 point defects. *13: continuous >10 point defects. ■ Resolution Unit V ke - - µV/e ke /pixel/s - e rms % - Lp/mm ■ Response (X-ray source: 60 kVp) 1.0 (X-ray source: 70 kVp, Filter: aluminum 4 mmt) 1000 0.9 OUTPUT VOLTAGE (mV) 0.8 0.7 CTF 0.6 0.5 0.4 0.3 0.2 500 0.1 0 0 1 2 3 4 5 6 7 8 9 10 SPACIAL FREQUENCY (Line pair/mm) 0 0 10 20 30 40 X-RAY EXPOSURE (µGy) KMPDB0248EA KMPDB0249EB 3 CCD area image sensor S8658-01 ■ Device structure LEFT CHIP (CHIP A), CENTER CHIP (CHIP B) RIGHT CHIP (CHIP C) C20 ISV C19 IGV ...... ...... SSA A3, B3 OS A4, B4 OD A5, B5 6 5 4 3 2 1 2 3 4 ...... 125 126127 128 ...... A8, B8 P2AH A9, B9 P1AH A10, B10 SSD A11, B11 A12, B12 A13, B13 P2BH P1BH IGH C1 C2 C3 IGH P1BH P2BH S1, ... , S1536: ACTIVE ELEMENTS C17 P2BV C16 P1AV C15 P2AV C14 TG C12 RD C11 SSA C10 OS C9 OD OG A6, B6 SG A7, B7 C18 P1BV C13 RG S6 S5 S4 S3 S2 S1 RD A2, B2 ...... 1536 1535 1534 1533 1532 1531 TG A20, B20 RG A1, B1 S1536 S1535 S1534 S1533 S1532 S1531 P2AV A19, B19 1531 1532 1533 1534 1535 1536 P1AV A18, B18 S1531 S1532 S1533 S1534 S1535 S1536 P2BV A17, B17 1 2 3 4 ...... 125 126127 128 2 3 4 5 6 P1BV A16, B16 S1 S2 S3 S4 S5 S6 ISV A14, B14 IGV A15, B15 C4 SSD C5 P1AH C6 P2AH C8 OG C7 SG S1, ... , S1536: ACTIVE ELEMENTS KMPDC0143EA ■ Pixel format ← Blank 0 Optical black 0 Left Horizontal Direction → Right Isolation Effective Isolation 0 1536 0 Optical black 0 Blank 0 Top ← Vertical direction → Bottom Isolation Effective Isolation 0 128 0 ■ Timing chart (TDI operation) Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH P2AH, P2BH SG RG OS ENLARGED VIEW Tovr Tpwh, Tpws TG P1AH, P1BH P2AH, P2BH SG RG Tpwr OS S1 4 S2 S3 S4 S5 S1535 S1536 KMPDC0142EB CCD area image sensor S8658-01 ■ Timing chart (TDI operation, 2 × 2 pixel binning) Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH P2AH, P2BH SG RG OS ENLARGED VIEW Tovr Tpwh, Tpws TG P1AH, P1BH P2AH, P2BH SG RG Tpwr OS S1 + S2 S3 + S4 S1535 + S1536 KMPDC0111EC Parameter Symbol Remark Pulse width tpwv *14, *15 Rise and fall time tprv, tpfv Pulse width tpwh P1AH, P1BH, Rise and fall time tprh, tpfh *15 P2AH, P2BH Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1AH, P1BH Overlap time tovr *14: TG terminal can be short-circuited to P2AV terminal. *15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. P1AV, P1BV, P2AV, P2BV, TG Min. 30 200 125 10 125 10 10 5 10 Typ. 60 250 50 250 50 50 20 Max. - Unit µs ns ns ns % ns ns % ns ns µs 5 CCD area image sensor S8658-01 ■ Dimensional outline (unit: mm) X-RAY SENSITIVE AREA: 220.0 (H) × 6.0 (V) 5.6 FOP 228.0 ± 0.3 FOP 3.0 FOP 7.2 ± 0.2 223.0 ± 0.5 A20 ← A14 B20 ← 60.96 1.6 C20 ← C14 B14 *1 *2 25.4 28.0 ± 0.3 TDI direction 15.24 60.96 CENTER CHIP LEFT CHIP A1 → A13 B1 45.72 → 30.48 RIGHT CHIP C1 → B13 C13 3.4 45.72 SCINTILLATOR 0.45 2.54 KMPDA0149ED EDGE PIXEL DEAD SPACE 1: 250 µm MIN. 350 µm MAX. 6 *2 Details CENTER CHIP CENTER CHIP EDGE PIXEL DEAD SPACE 2: 130 µm MIN. 200 µm MAX. ±50 µm MAX. LEFT CHIP ±50 µm MAX. *1 Details RIGHT CHIP CCD area image sensor S8658-01 ■ Pin connections Pin No. A1, B1 A2, B2 A3, B3 A4, B4 A5, B5 A6, B6 A7, B7 A8, B8 A9, B9 A10, B10 A11, B11 A12, B12 A13, B13 A14, B14 A15, B15 A16, B16 A17, B17 A18, B18 A19, B19 A20, B20 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 Symbol RG RD SSA OS OD OG SG P2AH P1AH SSD P2BH P1BH IGH ISV IGV P1BV P2BV P1AV P2AV TG IGH P1BH P2BH SSD P1AH P2AH SG OG OD OS SSA RD RG TG P2AV P1AV P2BV P1BV IGV ISV Description Reset gate Reset drain Analog ground Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock A-2 CCD horizontal register clock A-1 Digital ground CCD horizontal register clock B-2 CCD horizontal register clock B-1 Test point (Horizontal input gate) Test point (Vertical input source) Test point (Vertical input gate) CCD vertical register clock B-1 CCD vertical register clock B-2 CCD vertical register clock A-1 CCD vertical register clock A-2 Transfer gate Test point (Horizontal input gate) CCD horizontal register clock B-1 CCD horizontal register clock B-2 Digital ground CCD horizontal register clock A-1 CCD horizontal register clock A-2 Summing gate Output gate Output transistor drain Output transistor source Analog ground Reset drain Reset gate Transfer gate CCD vertical register clock A-2 CCD vertical register clock A-1 CCD vertical register clock B-2 CCD vertical register clock B-1 Test point (Vertical input gate) Test Point (Vertical input source) Remark Same timing as P2AH Same timing as P1AH Shorted to RD Same timing as P1AV Same timing as P2AV Same timing as P1AH Same timing as P2AH Same timing as P2AV Same timing as P1AV Shorted to RD ■ Precautions for use (Electrostatic countermeasures) * Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. 7 CCD area image sensor S8658-01 Information described in this material is current as of March, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1078E08 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Apr. 2011 DN 8