HAMAMATSU S7986

IMAGE SENSOR
CCD area image sensor
S7986-01, S7987-01
Back-thinned FT-CCD for low-light-level NTSC B/W TV application
The S7986-01 and S7987-01 are a family of FT-CCD area image sensors specifically designed for high speed operation. A high frame rate is
attained by employing a wide band width on-chip amplifier. In area scan operation, The S7986-01 and S7987-01 can be used as a high frame rate
camera, and 2/3-inch NTSC B/W TV correspondence. The S7986-01 and S7987-01 also feature low dark signal (MPP mode operation). The
S7986-01 and S7987-01 have an effective pixel size of 14 × 14 µm and is available in image areas of 9.212 (H) × 6.860 (V) mm.
One-stage peltier cooler is built into the package for thermoelectric cooling (S7987-01). At room temperature operation, the device can be cooled
down to -10 ˚C (typ.) without using any other cooling technique. In addition, since both the CCD chip and the peltier cooler are hermetically
sealed, no dry air is required, thus allowing easy handling.
Features
Applications
● High-speed on-chip amplifier
(14 MHz, 2/3-inch NTSC B/W TV correspondence)
● Greater than 90% quantum efficiency
● Wide spectrum range
● MPP operation
● Non-cooled types: S7986-01
One-stage TE-cooled types: S7987-01
(Two-stage TE-cooled types are optional)
● High-speed UV imaging
● Semiconductor inspection
● Microscope
■ Selection and order guide
Type No.
Cooling
Number of
total pixels
Number of
active pixels
Active area
[mm (H) × mm (V)]
S7986-01
S7987-01
Non-cooled
One-stage TE-cooled
680 × 500
658 × 490
9.212 × 6.860
■ General ratings
Parameter
Specification
CCD structure
Frame transfer (2/3-inch NTSC B/W TV correspondence)
Pixel size
14 (H) × 14 (V) µm
Vertical clock phase
2-phase
Horizontal clock phase
2-phase
Output circuit
Two-stage MOSFET source follower
Package
24-pin ceramic package
Window*1
Sapphire
*1: Temporary window type (ex. S7986-01N) is available upon request.
1
CCD area image sensor
S7986-01, S7987-01
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature*2
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage (image area)
Vertical clock voltage (storage area)
Horizontal clock voltage
*2: Chip temperature
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
VOG
VRG
VTG
V P1VI, VP2VI
VP1VS, VP2VS
VP1H, VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
-
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
Symbol
VOD
VRD
VOG
VSS
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VP1VIH, VP2VIH
VP1VIL, VP2VIL
VP1VSH, VP2VSH
VP1VSL, VP2VSL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
RL
Min.
12
11.5
1
-9
-9
4
-9
4
-9
4
-9
4
-9
4
-9
4
-9
2.0
Typ.
15
12
3
0
VRD
VRD
-8
-8
6
-8
6
-8
6
-8
6
-8
6
-8
6
-8
2.2
Max.
18
12.5
5
8
-7
8
-7
8
-7
8
-7
8
-7
8
-7
2.4
Unit
V
V
V
V
V
V
V
V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical input source
Horizontal input source
Test point
Vertical input gate
Horizontal input gate
Vertical shift register
High
clock voltage (Image area)
Low
Vertical shift register
High
clock voltage (Storage area)
Low
Horizontal shift register
High
clock voltage
Low
High
Summing gate voltage
Low
High
Reset gate voltage
Low
High
Transfer gate voltage
Low
External load resistance
V
V
V
V
V
V
kΩ
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Signal output frequency
fc
Vertical shift register capacitance
CP1VI
(Image area)
CP2VI
Vertical shift register capacitance
CP1VS
(Storage area)
CP2VS
Horizontal shift register capacitance
CP1H, CP2H
Summing gate capacitance
CSG
Reset gate capacitance
CRG
Charge transfer gate capacitance
CTG
Transfer efficiency*3
CTE
0.99995
DC output level
Vout
Output impedance
Zo
Power consumption*4
P
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*4: Power consumption of the on-chip amplifier plus load resistance
2
Typ.
1
Max.
14
Unit
MHz
3000
-
pF
3000
-
pF
90
30
30
70
0.99999
8
500
60
-
pF
pF
pF
pF
V
Ω
mW
CCD area image sensor
S7986-01, S7987-01
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
Fw × Sv
V
Vertical
30
65
Full well capacity
Fw
keHorizontal
60
130
CCD node sensitivity
Sv
1.5
2.0
µV/e5
Dark current*
25 °C
50
500
DS
e-/pixel/s
(MPP mode)
0 °C
5
50
Readout noise*6
Nr
150
300
e-rms
Dynamic range (area scanning)*7
DR
200
430
Photo response non-uniformity*8
PRNU
±10
%
Spectral response range
200 to 1100
nm
λ
White
spots
0
Point defect*9
Black spots
10
Blemish
Cluster defect*10
3
11
0
Column defect*
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -50 °C, Operating frequency is 12 MHz.
*7: Dynamic range (DR) = Full well/Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
Photo response non-uniformity (PRNU) (%) =
Fixed pattern noise (peak to peak)
Signal
× 100
*9: White spots
Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing one-half of
the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
■ Spectral response (without window)*12
(Typ. Ta=25 ˚C)
100
90
Back-thinned CCD
90
80
80
70
70
60
50
40
30
20
Front-illuminated CCD
(UV coated)
Sapphire
60
50
40
30
20
Front-illuminated CCD
10
0
200
(Typ. Ta=25 ˚C)
100
Transmittance (%)
Quantum efficiency (%)
■ Spectral transmittance characteristic
of window material
10
400
600
800
1000
1200
Wavelength (nm)
0
100 200 300 400 500 600 700 800 900 1000
Wavelength (nm)
KMPDB0058EB
KMPDB0101EB
*14: Spectral response with sapphire is decreased according to the
spectral transmittance characteristic of window material.
3
CCD area image sensor
● Window material
■ Dark current vs. temperature
Dark current (e-/pixel/s)
Type no.
S7986-01
S7987-01
*13: Hermetic sealing
(Typ.)
100
S7986-01, S7987-01
10
1
0.1
0.01
-50
-40
-30
-20
-10
0
10
20
30
Temperature (˚C)
KMPDB0306EA
■ Device structure (Conceptual drawing of top view)
20
Thinning
490
5
4
3
2
1 2345
10-bevel
490 image pixels
Thinning
22
...
658
21
15
...
14
...
13
1
12
11
3
2
4 blank pixels
4
5
8
9
10
500 storage pixels
24
658 signal out
22-bevel
KMPDC0098EA
4
Window material
Sapphire*13
(option: window-less)
S7986-01, S7987-01
CCD area image sensor
■ Timing chart (2-line binning TV rate operation)
Shutter has to be open.
Shutter has to be closed (vertical transfer)
Tpwv
1
P1VI
2
3
4
P2VI
P1VS
P2VS, TG
P1H
P2H, SG
RG
OS
Enlarged view
Tovr
Tpwh, Tpws
P2VS, TG
P1H
P2H, SG
Tpwr
RG
OS
D1
D2
D3
KMPDC0099EB
Parameter
Symbol
Min.
Pulse
width
Tpwv
1
P1VI, P2VI, P1VS, P2VS, TG*14
Rise and fall times
Tprv, Tpfv
20
Pulse width
Tpwh
35
P1H, P2H*14
Rise and fall times
Tprh, Tpfh
10
Duty ratio
Pulse width
Tpws
35
SG
Rise and fall times
Tprs, Tpfs
10
Duty ratio
Pulse width
Tpwr
15
RG
Rise and fall times
Tprr, Tpfr
5
TG - P1H
Overlap time
Tovr
3
*14: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.
Typ.
50
50
-
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
5
CCD area image sensor
S7986-01, S7987-01
■ Dimensional outlines (unit: mm)
S7986-01
S7987-01
Window 12.0*
Window 12.0*
Active area 6.860
Active area 6.860
22.9 ± 0.3
1
Index mark
6.9 ± 0.63
19.0
12
2.54 ± 0.13
22.4 ± 0.3
4.0
12.0*
9.212
22.9 ± 0.3
22.4 ± 0.3
1
Index mark
13
6.3 ± 0.63
24
13
9.212
12.0*
24
12
2.54 ± 0.13
44.0 ± 0.44
44.0 ± 0.44
52.0
60.0 ± 0.3
1st pin index mark
Photosensitive surface
o0.5 ± 0.05
7.7 ± 0.68
(24 ×)
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristics of window material” graph.
1.0
3.0
4.8 ± 0.49
4.0 ± 0.44
3.4 ± 0.44
o0.5 ± 0.05
2.4 ± 0.15
3.0
(24 ×)
4.8 ± 0.15
Photosensitive surface
1st pin index mark
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristics of window material” graph.
KMPDA0103EB
KMPDA0104EB
■ Pin connections
Pin
no.
1
2
3
4
5
6
7
8
9
10
11
12
13
Symbol
RD
OS
OD
OG
SG
P2H
P1H
IG2H
IG1H
ISH
TG
14
P2VS
15
P1VS
16
17
18
19
20
SS
21
P2VI
22
P1VI
S7986-01
Function
Reset drain
Output transistor source
Output transistor drain
Output gate
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
Transfer gate
CCD vertical register clock-2
(storage area)
CCD vertical register clock-1
(storage area)
Substrate (GND)
CCD vertical register clock-2
(image area)
CCD vertical register clock-1
(image area)
Symbol
RD
OS
OD
OG
SG
P2H
P1H
IG2H
IG1H
ISH
TG
P2VS
P1VS
Th1
Th2
PP+
SS
P2VI
P1VI
S7987-01
Function
Reset drain
Output transistor source
Output transistor drain
Output gate
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
Transfer gate
CCD vertical register clock-2
(storage area)
CCD vertical register clock-1
(storage area)
Thermistor
Thermistor
TE-coolerTE-cooler+
Substrate (GND)
CCD vertical register clock-2
(image area)
CCD vertical register clock-1
(image area)
23
24
RG
Reset gate
RG
Reset gate
*15: TG is an isolation gate between vertical register and horizontal resister.
In standard operation, the same pulse of P2VS should be applied to the TG.
6
Remark
(s ta n d a rd o p e ra tio n )
+12 V
R L =2.2 kΩ
+15 V
+3 V
Same timing as P2H
-8 V
-8 V
Shorted to RD
Same timing as P2VS* 15
GND
CCD area image sensor
S7986-01, S7987-01
■ Specifications of built-in TE-cooler (Typ.)
Parameter
Symbol
Condition
Value
Unit
Internal resistance
Rint
Ta=25 °C
1.2
Ω
Maximum current*16
Imax
Tc*17=Th*18=25 °C
3.0
A
Maximum voltage
Vmax
Tc*17=Th*18=25 °C
3.6
V
Maximum heat
Qmax
5.1
W
absorption*19
Maximum temperature
70
°C
of hot side
*16: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current
should be less than 60 % of this maximum current.
*17: Temperature of cooling side of thermoelectric cooler
*18: Temperature of heat radiating side of thermoelectric cooler
*19: This is a heat absorption when the maximum current is supplied to the TE-cooler.
(Typ. Ta=25 ˚C)
6
Voltage (V)
30
Voltage vs. current
CCD temperature vs. current
20
5
10
4
0
3
-10
2
-20
1
-30
0
0
1
2
3
4
CCD temperature (˚C)
7
-40
Current (A)
KMPDB0179EA
■ Specifications of built-in temperature sensor (S7987-01)
(Typ. Ta=25 ˚C)
1 MΩ
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
RT1: Resistance at absolute temperature T1 [K]
RT2: Resistance at absolute temperature T2 [K]
BT1/T2: B constant [K]
The characteristics of the thermistor used are as follows.
R298=10 kΩ
B298/323=3450 K
Resistance
A chip thermistor is built in the same package with a CCD chip, and the
CCD chip temperature can be monitored with it. A relation between the
thermistor resistance and absolute temperature is expressed by the
following equation.
100 kΩ
10 kΩ
220
240
260
280
300
Temperature (K)
KMPDB0111EA
7
CCD area image sensor
S7986-01, S7987-01
■ Precaution for use (electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature gradient rate
When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2009 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
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Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
8
Cat. No. KMPD1035E07
Dec. 2009 DN