SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE (TOP VIEW) Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems D01 D02 D03 D04 GND GND D05 D06 D07 D08 description This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device consists of an 8-bit high-speed Schottky diode array suitable for a clamp to GND. The SN74S1056 is characterized for operation from 0°C to 70°C. 1 2 3 4 5 6 7 8 9 10 D PACKAGE (TOP VIEW) D01 D02 D03 D04 D05 D06 D07 D08 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 NC GND GND GND GND GND GND NC schematic diagrams SC Package D Package 1 1 D01 D02 D01 2 D02 2 15 D03 GND 3 3 D03 14 6 GND 4 D04 GND 4 D04 13 7 D05 D05 5 GND D06 D07 GND 5 8 12 GND 6 D06 9 11 GND 7 D07 10 10 8 D08 GND D08 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 1997, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Steady-state reverse voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Continuous forward current, IF: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mA Repetitive peak forward current, IFRM (see Note 1): Any D terminal from GND . . . . . . . . . . . . . . . . . . 300 mA Total through all GND terminals . . . . . . . . . . . . . . . 1.2 A Continuous total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . . . . . . . . . 1000 mW Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: These values apply for tw ≤ 100 µs, duty cycle ≤ 20%. electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) single-diode operation (see Note 2) PARAMETER IR Static reverse current VF Static forward voltage VFM Peak forward voltage Ct Total capacitance TEST CONDITIONS MIN VR = 7 V IF = 18 mA TYP‡ MAX 10 IF = 50 mA IF = 300 mA 0.65 0.85 0.8 1 1.41 VR = 0 V, VR = 2 V, UNIT µA V V f = 1 MHz 11 20 f = 1 MHz 8 16 pF ‡ All typical values are at TA = 25°C. NOTE 2: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement of these characteristics. multiple-diode operation PARAMETER Ix Internal crosstalk current TEST CONDITIONS MIN TYP‡ MAX Total IF current = 1.2 A, See Note 3 0.6 2 Total IF current = 126 mA, See Note 3 0.01 0.1 TYP MAX 5 10 UNIT mA ‡ All typical values are at TA = 25°C. NOTE 3: Ix is measured under the following conditions with one diode static, all others switching: Switching diodes: tw = 100 µs, duty cycle = 20% Static diode: VR = 5 V The static diode input current is the internal crosstalk current Ix. switching characteristics, TA = 25°C (see Figures 1 and 2) PARAMETER trr 2 Reverse recovery time TEST CONDITIONS IF = 10 mA, IRM(REC) = 10 mA, POST OFFICE BOX 655303 IR(REC) = 1 mA, • DALLAS, TEXAS 75265 MIN RL = 100 Ω UNIT ns SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 PARAMETER MEASUREMENT INFORMATION 50 Ω (See Note A) 450 Ω Pulse Generator Sampling Oscilloscope (See Note B) DUT 90% VFM VF Output Waveform (See Note B) Input Pulse (See Note A) 10% tr NOTES: A. The input pulse is supplied by a pulse generator having the following characteristics: tr = 20 ns, ZO = 50 Ω, freq = 500 Hz, duty cycle = 0.01. B. The output waveform is monitored by an oscilloscope having the following characteristics: tr ≤ 350 ps, Ri = 50 Ω, Ci = ≤ 5 pF. Figure 1. Forward Recovery Voltage DUT (See Note A) Pulse Generator IF Sampling Oscilloscope If tf 10% (See Note B) trr 0 Output Waveform (See Note B) IR(REC) Input Pulse (See Note A) 90% IRM(REC) NOTES: A. The input pulse is supplied by a pulse generator having the following characteristics: tf = 0.5 ns, ZO = 50 Ω, tw = ≥ 50 ns, duty cycle = 0.01. B. The output waveform is monitored by an oscilloscope having the following characteristics: tr ≤ 350 ps, Ri = 50 Ω, Ci = ≤ 5 pF. Figure 2. Reverse Recovery Time POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 APPLICATION INFORMATION Large negative transients occurring at the inputs of memory devices (DRAMs, SRAMs, EPROMs, etc.) or on the CLOCK lines of many clocked devices can result in improper operation of the devices. The SN74S1056 diode termination array helps suppress negative transients caused by transmission-line reflections, crosstalk, and switching noise. Diode terminations have several advantages when compared to resistor termination schemes. Split resistor or Thevenin equivalent termination can cause a substantial increase in power consumption. The use of a single resistor to ground to terminate a line usually results in degradation of the output high level, resulting in reduced noise immunity. Series damping resistors placed on the outputs of the driver reduce negative transients, but they also can increase propagation delays down the line, as a series resistor reduces the output drive capability of the driving device. Diode terminations have none of these drawbacks. The operation of the diode arrays in reducing negative transients is explained in the following figures. The diode conducts current when the voltage reaches a negative value large enough for the diode to turn on. Suppression of negative transients is tracked by the current-voltage characteristic curve for that diode. A typical current versus voltage plot for the SN74S1056 is shown in Figure 3. To illustrate how the diode arrays act to reduce negative transients at the end of a transmission line, the test setup in Figure 4(a) was evaluated. The resulting waveforms with and without the diode are shown in Figure 4(b). The maximum effectiveness of the diode arrays in suppressing negative transients occurs when the diode arrays are placed at the end of a line and/or the end of a long stub branching off a main transmission line. The diodes also can be used to reduce the negative transients that occur due to discontinuities in the middle of a line. An example of this is a slot in a backplane that is provided for an add-on card. DIODE FORWARD CURRENT vs DIODE FORWARD VOLTAGE –100 TA = 25°C –90 I I – Forward Current – mA –80 Variable 1: VIN –Ch 1 Linear Sweep: Start 0.000 V Stop –2.000 V Step –0.010 V –70 –60 –50 Constants: VHI –Vs1 VLO –Vs2 –40 –30 –20 –10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VF – Forward Voltage – V Figure 3. Current Versus Voltage for the SN74S1056 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3.5000 V 0.0000 V SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 APPLICATION INFORMATION ZO = 50 Ω Length = 36 in. (a) DIODE TEST SETUP 56.500 ns 31.500 ns End-ofLine Without Diode 81.500 ns End-of-Line With Diode Vmarker 1 Vmarker 2 Ch 1 Timebase Memory 1 Vmarker 1 Vmarker 2 Offset = 0.000 V Delay = 56.500 ns Delta V = –2.293 V = 1.880 V/div = 5.00 ns/V = 1.880 V/div = –1.353 V = –3.647 V (b) OSCILLOSCOPE DISPLAY Figure 4. Diode Test Setup and Oscilloscope Display POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 PACKAGE OPTION ADDENDUM www.ti.com 30-Mar-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) SN74S1056D OBSOLETE SOIC D 16 TBD Call TI Call TI SN74S1056DR OBSOLETE SOIC D 16 TBD Call TI Call TI SN74S1056SC OBSOLETE SIP SC 10 TBD Call TI Call TI (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. 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