TI MCT2

MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
D
D
D
D
D
D
D
Gallium Arsenide Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
High Direct-Current Transfer Ratio
Base Lead Provided for Conventional
Transistor Biasing
High-Voltage Electrical Isolation . . .
1.5-kV, or 3.55-kV Rating
Plastic Dual-In-Line Package
High-Speed Switching:
tr = 5 µs, tf = 5 µs Typical
Designed to be Interchangeable with
General Instruments MCT2 and MCT2E
MCT2 OR MCT2E . . . PACKAGE
(TOP VIEW)
ANODE
CATHODE
NC
1
6
2
5
3
4
BASE
COLLECTOR
EMITTER
NC – No internal connection
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†
Input-to-output voltage: MCT2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 1.5 kV
MCT2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 3.55 kV
Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V
Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
Input-diode continuous forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA
Input-diode peak forward current (tw ≤ 1 ns, PRF ≤ 300 Hz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Phototransistor (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Total, infrared-emitting diode plus phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 100°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100 °C free-air temperature at the rate of 2.67 mW/°C.
3. Derate linearly to 100 °C free-air temperature at the rate of 3.33 mW/°C.
Copyright  1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V
30
V
IE = 100 µA,
VR = 3 V
IB = 0,
IF = 0
7
V
Phototransistor
operation
VCE = 10 V,
IB = 0,
IF = 10 mA
Photodiode operation
VCB = 10 V,
IE = 0,
IF = 10 mA
Phototransistor
operation
VCE = 10 V,
IB = 0,
IF = 0
1
50
nA
Photodiode operation
VCB = 10 V,
IE = 0,
IF = 0
0.1
20
nA
VCE = 5 V,
IC = 100 µA,
µA
IF = 0
MCT2
1.25
1.5
V
0.25
4
V
Collector-emitter breakdown voltage
Input diode static reverse current
Off-state collector current
UNIT
70
Emitter-collector breakdown voltage
IC(off)
MAX
IF = 0
IF = 0
V(BRECO)
IR
On-state collector current
TYP
IE = 0,
IB = 0,
Collector-base breakdown voltage
IC(on)
MIN
IC = 10 µA,
IC =1 mA,
V(BR)CBO
V(BR)CEO
HFE
Transistor static forward current transfer ratio
VF
VCE(sat)
Input diode static forward voltage
rIO
Input-to-output internal resistance
Cio
Input-to-output capacitance
Collector-emitter saturation voltage
10
MCT2E
2
Vin-out = 0,
See Note 4
5
mA
20
µA
250
100
IF = 20 mA
IC = 2 mA,
IB = 0,
IF = 16 mA
Vin-out = ±1.5 kV for MCT2,
±3.55 kV for MCT2E,
See Note 4
µA
300
Ω
1011
f = 1 MHz,
1
pF
NOTE 4: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.
switching characteristics
PARAMETER
tr
tf
Rise time
tr
tf
Rise time
2
Fall time
Fall time
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Phototransistor operation
VCC = 10 V,,
RL = 100 Ω,
IC(on) = 2 mA,,
See Test Circuit A of Figure 1
5
µs
Photodiode operation
VCC = 10 V,
RL = 1 kΩ,
IC(on) 20 µA,
µ
See Test Circuit B of Figure 1
1
µs
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
PARAMETER MEASUREMENT INFORMATION
47 Ω
+
–
VCC = 10 V
47 Ω
Input
Input
0V
Output
(see Note B)
RL = 100 Ω
Input
tr
tf
Output
90%
10%
10%
+
–
TEST CIRCUIT A
PHOTOTRANSISTOR OPERATION
Output
(see Note B)
90%
VOLTAGE WAVEFORMS
VCC = 10 V
RL = 1 kΩ
TEST CIRCUIT B
PHOTODIODE OPERATION
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50 Ω, tr ≤ 15 ns, duty cycle 1%,
tw = 100 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ≤ 12 ns, Rin ≥ 1 MΩ, Cin ≤ 20 pF.
Figure 1. Switching Times
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
TYPICAL CHARACTERISTICS
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT
vs
INPUT-DIODE FORWARD CURRENT
60
100
IB = 0
TA = 25°C
See Note A
50
I C – Collector Current – mA
I C – Collector Current – mA
40
VCE = 10 V
IB = 0
TA = 25°C
10
4
1
0.4
0.1
40
Max Continuous
Power Dissipation
30
IF = 40 mA
20
IF = 30 mA
IF = 20 mA
10
0.04
0.01
0.1
IF = 20 mA
0
0.4
1
4
10
40
IF – Input-Diode Forward Current – mA
100
0
2
4
6
8
10
12
14
16
18
20
VCE – Collector-Emitter Voltage – V
NOTE A: Pulse operation of input diode is required for operation
beyond limits shown by dotted lines.
Figure 3
Figure 2
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25°C)
vs
FREE-AIR TEMPERATURE
1.6
VCE = 0.4 V to 10 V
IB = 0
IF = 10 mA
See Note B
On-State Collector Current
(Relative to Value at TA = 25 °C)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
– 75
– 50
– 25
0
25
50
75
100
125
TA – Free-Air Temperature – °C
NOTE B: These parameters were measured using pulse
techniques, tw = 1 ms, duty cycle ≤ 2 %.
Figure 4
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MCT2, MCT2E
OPTOCOUPLERS
SOES023 – MARCH 1983 – REVISED OCTOBER 1995
MECHANICAL INFORMATION
The package consists of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor mounted
on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The case can withstand
soldering temperature with no deformation and device performance characteristics remain stable when
operated in high-humidity conditions. Unit weight is approximately 0.52 grams.
9,40 (0.370)
8,38 (0.330)
C
L
C
L
7,62 (0.300) T.P.
6
5
4
6,61 (0.260)
6,09 (0.240)
5,46 (0.215)
2,92 (0.115)
1,78 (0.070)
0,51 (0.020)
Index Dot
(see Note B)
1
2
3
(see Note C)
105°
90°
1,78 (0.070) MAX
6 Places
Seating Plane
0,305 (0.012)
0,203 (0.008)
1,01 (0.040) MIN
3,81 (0.150)
3,17 (0.125)
2,29 (0.090)
1,27 (0.050)
2,54 (0.100) T.P.
(see Note A)
0,534 (0.021)
0,381 (0.015)
6 Places
NOTES: A. Leads are within 0,13 (0.005) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. Terminal connections:
1. Anode (part of the infrared-emitting diode)
2. Cathode (part of the infrared-emitting diode)
3. No internal connection
4. Emitter (part of the phototransistor)
5. Collector (part of the phototransistor)
6. Base (part of the phototransistor)
D. The dimensions given fall within JEDEC MO-001 AM dimensions.
E. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 5. Mechanical Information
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• DALLAS, TEXAS 75265
5
PACKAGE OPTION ADDENDUM
www.ti.com
8-Apr-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
MCT2
OBSOLETE
PDIP
N
6
TBD
Call TI
Call TI
MCT2E
OBSOLETE
PDIP
N
6
TBD
Call TI
Call TI
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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