HMC1015 v00.0811 MIXERS - TRIPLE-BALANCED - CHIP GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz Typical Applications Features The HMC1015 is ideal for: Passive: No DC Bias Required • Point-to-Point Radios High Input IP3: 20 dBm • Point-to-Multi-Point Radios & VSAT High LO/RF Isolation: 45 dB • Test Equipment & Sensors High 2LO/IF Isolation: 50 dB • Military End-Use Wide IF Bandwidth: 16 - 22 GHz Upconversion & Downconversion Applications Die Size: 1.14 x 1.1 x 0.1 mm Functional Diagram General Description The HMC1015 is a general purpose triple balanced mixer chip that can be used as a frequency converter with 16 to 22 GHz at the IF port and 26 to 32 GHz at the RF port. This mixer requires no external components or matching circuitry. The HMC1015 provides excellent LO/RF, LO/IF and 2LO/IF isolation due to optimized balun structures. The mixer operates with LO drive levels from +9 dBm to +15 dBm. The HMC1015 wideband mixer exhibits consistent conversion gain and compression across its bandwidth. Electrical Specifications, TA = +25° C, LO = 9 GHz, LO = +13 dBm [2] Parameter Min. Typ. Max. Units RF Frequency Range 26 - 32 GHz IF Frequency Range 16- 22 GHz LO Frequency Range 7 - 11 Conversion Loss 10 LO to RF Isolation LO to IF Isolation [1] [1] 2LO to IF Isolation [1] GHz 13 dB 45 dB 31 dB 50 dB RF to IF Isolation 35 dB IP3 (Input) 22 dBm 1 dB Gain Compression (Input) 10 dBm [1] Fixed IF = 17 GHz. [2] Unless otherwise noted , all measurements performed as an upconverter with LO = 9 GHz. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz 0 0 -5 -5 -10 +25 C +85 C -55 C -15 -20 -25 -10 +25 C +85 C -55 C -15 -20 -25 24 25 26 27 28 29 30 31 32 33 34 24 25 26 27 RF FREQUENCY (GHz) 0 0 -5 -5 -10 +25 C +85 C -55 C -20 -25 30 31 32 33 34 32 33 34 34 35 -10 +9 dBm +11 dBm +13 dBm +15 dBm -15 -20 -25 24 25 26 27 28 29 30 31 32 33 34 24 25 26 27 RF FREQUENCY (GHz) 29 30 31 Conversion Gain vs. LO Power, Upconverter, LO= 11 GHz 0 -5 -5 CONVERSION GAIN (dB) 0 -10 +9 dBm +11 dBm +13 dBm +15 dBm -15 28 RF FREQUENCY (GHz) Conversion Gain vs. LO Power, Upconverter, LO= 9 GHz CONVERSION GAIN (dB) 29 Conversion Gain vs. LO Power, Upconverter, LO= 7 GHz CONVERSION GAIN (dB) CONVERSION GAIN (dB) Conversion Gain vs. Temperature, Upconverter, LO= 11 GHz -15 28 RF FREQUENCY (GHz) MIXERS - TRIPLE-BALANCED - CHIP Conversion Gain vs. Temperature Upconverter, LO= 9 GHz CONVERSION GAIN (dB) CONVERSION GAIN (dB) Conversion Gain vs. Temperature, Upconverter, LO= 7 GHz -20 -25 -10 +9 dBm +11 dBm +13 dBm +15 dBm -15 -20 -25 24 25 26 27 28 29 30 31 RF FREQUENCY (GHz) 32 33 34 24 25 26 27 28 29 30 31 32 33 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz 30 25 25 IP3 (dBm) IP3 (dBm) Input IP3 vs. Temperature, Upconverter, LO= 9 GHz 30 20 15 +25 C +85 C -55 C 10 20 15 +25 C +85 C -55 C 10 5 5 24 25 26 27 28 29 30 31 32 33 34 24 25 26 RF FREQUENCY (GHz) 25 25 20 20 IP3(dBm) 30 15 +25 C +85 C -55 C 30 31 32 33 34 32 33 34 32 33 34 +9 dBm +11 dBm +13 dBm +15 dBm 5 25 26 27 28 29 30 31 32 33 34 24 25 26 RF FREQUENCY (GHz) 28 29 30 31 Input IP3 vs. LO Power, Upconverter, LO= 11 GHz 30 25 25 20 20 IP3(dBm) 30 15 +9 dBm +11 dBm +13 dBm +15 dBm 10 27 RF FREQUENCY (GHz) Input IP3 vs. LO Power, Upconverter, LO= 9 GHz IP3(dBm) 29 15 10 5 24 15 +9 dBm +11 dBm +13 dBm +15 dBm 10 5 5 24 25 26 27 28 29 30 31 RF FREQUENCY (GHz) 3 28 Input IP3 vs. LO Power, Upconverter, LO= 7 GHz 30 10 27 RF FREQUENCY (GHz) Input IP3 vs. Temperature, Upconverter, LO= 11 GHz IP3 (dBm) MIXERS - TRIPLE-BALANCED - CHIP Input IP3 vs. Temperature, Upconverter, LO= 7 GHz 32 33 34 24 25 26 27 28 29 30 31 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz RF and IF Return Loss LO Return Loss 0 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -20 -10 -20 -30 9 dBm 11 dBm 13 dBm 15 dBm RF -25 IF -40 -30 15 19 23 27 31 35 6 8 10 12 14 16 FREQUENCY (GHz) FREQUENCY (GHz) Isolation LO/IF, LO/RF, 2LO/IF Isolation RF/IF -10 -10 -20 -40 ISOLATION (dB) ISOLATION (dB) -20 LO/IF -30 LO/RF -50 -60 2LO/IF -70 -30 RF/IF -40 -50 -80 -90 -60 6 7 8 9 10 11 24 12 25 26 LO FREQUENCY (GHz) 29 30 31 32 33 34 Input P1dB vs. LO Power @ LO= 9 GHz 14 14 12 12 10 10 P1dB (dBm) P1dB (dBm) 28 RF FREQUENCY (GHz) Input P1dB vs. Temperature @ LO= 9 GHz 8 +25C +85C -40C 6 27 MIXERS - TRIPLE-BALANCED - CHIP 0 4 8 6 +9 dBm +11 dBm +13 dBm +15 dBm 4 2 2 24 25 26 27 28 29 30 31 RF FREQUENCY (GHz) 32 33 34 24 25 26 27 28 29 30 31 32 33 34 RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz MIXERS - TRIPLE-BALANCED - CHIP Table 1. Absolute Maximum Ratings RF / IF Input (LO = +18 dBm) 15.5 dBm LO Drive 20 dBm Maximum Junction Temperature 150 °C Continuous Pdiss (Ta = 85 °C) (derate 2.5 mW/°C above 85 °C) 79 mW Thermal Resistance (RTH) (junction to die bottom) 392 °C/W Operating Temperature -55°C to +85°C Storage Temperature -65°C to 125°C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Table 2. Die Packaging Information Standard Alternate GP-1 (Gel Pack) [2] [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS 0.004” 3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099]. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± 0.002 [1] For more information refer to the “Packaging information” Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation. 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz Table 3. Pad Descriptions Function Description 1 RF This pad is AC coupled and matched to 50 Ohms. 2 IF This pad is AC coupled and matched to 50 Ohms. 3 LO This pad is AC coupled and Matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground Pad Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] MIXERS - TRIPLE-BALANCED - CHIP Pad Number 6 HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs MIXERS - TRIPLE-BALANCED - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1015 v00.0811 GaAs MMIC FUNDAMENTAL MIXER, 26 - 32 GHz MIXERS - TRIPLE-BALANCED - CHIP Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8