Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC1059 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1058 v01.0413 MIXERS - SUB HARMONIC - CHIP GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz Typical Applications Features The HMC1058 is ideal for: Passive: No DC Bias Required • E-Band Communications Systems Low LO Power: 9 dBm • Test Equipment & Sensors High LO/RF Isolation: 28 dB • Military End-Use High 2LO/RF Isolation: 43 dB • Automotive Radar Wide IF Bandwidth: DC to 12 GHz Upconversion & Downconversion Applications Die Size: 1.15 x 0.97 x 0.1 mm Functional Diagram General Description The HMC1058 is a sub-harmonically pumped MMIC mixer. It can be used as an upconverter or a downconverter, with DC to 12 GHz at the IF port and 71 to 86 GHz at the RF port. This passsive MMIC mixer is fabricated with GaAs Shottky diode technology. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, IF = 4 GHz, LO = +9 dBm, USB [1] Parameter Min. Typ. Max. Units RF Frequency Range 71 - 86 GHz IF Frequency Range DC - 12 GHz LO Frequency Range 29 - 43 GHz Conversion Loss -11 dB 2LO to RF Isolation 43 dB LO to RF Isolation 28 dB LO to IF Isolation 20 dB RF to IF Isolation 18 dB 6 dBm IP3 (Input) [2] -14 [1] Unless otherwise noted , all measurements performed as an downconverter with LO = +9 dBm. [2] Upconverter performance. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz -5 -5 -10 -10 -15 -20 -25 -30 60 65 70 75 80 85 -15 -20 -25 -30 90 60 RF FREQUENCY (GHz) +25 C +85 C -55 C 75 +25 C 80 85 90 +85 C -55 C Conversion Gain vs. Temperature IF= 12 GHz, USB -5 -10 -10 CONVERSION GAIN (dB) -5 -15 -20 -25 -30 -15 -20 -25 -30 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) +25 C 70 75 80 85 90 RF FREQUENCY (GHz) +85 C +25 C -55 C +85 C -55 C Conversion Gain vs. LO Power IF= 4 GHz, USB Conversion Gain vs. LO Power IF= 2 GHz, USB -5 -5 -10 -10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 70 RF FREQUENCY (GHz) Conversion Gain vs. Temperature IF= 8 GHz, USB CONVERSION GAIN (dB) 65 MIXERS - SUB HARMONIC - CHIP Conversion Gain vs. Temperature IF= 4 GHz, USB CONVERSION GAIN (dB) CONVERSION GAIN (dB) Conversion Gain vs. Temperature IF= 2 GHz, USB -15 -20 -25 -30 -15 -20 -25 -30 60 65 70 75 80 85 RF FREQUENCY (GHz) 7 dBm 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) 9 dBm 7 dBm 9 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz -5 -5 -10 -10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) Conversion Gain vs. LO Power IF= 12 GHz, USB -15 -20 -25 -30 -15 -20 -25 -30 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 7 dBm 70 75 80 85 90 RF FREQUENCY (GHz) 9 dBm 7 dBm Conversion Gain vs. LO Power IF= 2 GHz, LSB 9 dBm Conversion Gain vs. LO Power IF= 4 GHz, LSB -5 -5 -10 -10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) MIXERS - SUB HARMONIC - CHIP Conversion Gain vs. Lo Power IF= 8 GHz, USB -15 -20 -25 -30 -35 -15 -20 -25 -30 -35 -40 -40 60 65 70 75 80 85 90 60 65 RF FREQUENCY (GHz) 7 dBm 70 75 80 85 90 RF FREQUENCY (GHz) 9 dBm 7 dBm Conversion Gain vs. LO Power IF= 8 GHz, LSB 9 dBm Conversion Gain vs. LO Power IF= 12 GHz, LSB -5 -5 CONVERSION GAIN (dB) CONVERSION GAIN (dB) -10 -15 -20 -25 -30 -10 -15 -20 -25 -35 -40 -30 60 65 70 75 80 85 RF FREQUENCY (GHz) 7 dBm 3 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) 9 dBm 7 dBm 9 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz -5 -5 -10 -10 -15 -20 -25 -30 -15 -20 -25 -30 0 1.5 3 4.5 6 7.5 9 10.5 12 0 1.5 3 IF FREQUENCY (GHz) 7 dBm 9 dBm 6 9 10.5 12 9 dBm Conversion Gain, Upconverter, LO=9dBm, IF= 4 GHz, LSB -5 -5 CONVERSION GAIN (dB) -10 -15 -20 -25 -30 -10 -15 -20 -25 -30 60 65 70 75 80 85 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) RF FREQUENCY (GHz) CG CG Input IP3, Upconverter, LO= 9dBm, IF=4 GHz, USB 10 Input IP3, Upconverter, LO= 9dBm, IF=4 GHz, LSB 8 8 6 IP3 (dBm) IP3 (dBm) 7.5 7 dBm Conversion Gain, Upconverter, LO=9dBm, IF= 4 GHz, USB CONVERSION GAIN (dB) 4.5 IF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP Conversion Gain IFBW vs. LO Power Downconverter, LO=37.25 GHz, USB CONVERSION GAIN (dB) CONVERSION GAIN (dB) Conversion Gain IFBW vs. LO Power LO=31.25 GHz, USB 6 4 4 2 2 0 0 60 65 70 75 80 RF FREQUENCY (GHz) IP3 85 90 60 65 70 75 80 85 90 RF FREQUENCY (GHz) IP3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz IF Return Loss RF Return Loss 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -10 -15 -20 -25 -30 -20 -35 50 55 60 65 70 75 80 85 90 95 0 100 5 10 15 RF-RL 25 30 85 90 IF-RL LO Return Loss RF/IF Isolation 5 0 0 -10 ISOLATION (dB) -5 -10 -15 -20 -20 -30 -25 -40 -30 2 6 10 14 18 22 26 30 34 38 42 46 50 60 65 70 75 RF/IF Isolation LO-RL LO/IF Isolation vs. LO Drive LO/RF isolation 40 40 30 30 ISOLATION (dB) ISOLATION (dB) 80 RF FREQUENCY (GHz) LO FREQUENCY (GHz) 20 20 10 10 0 0 30 32 34 36 38 40 42 7 dBm 44 30 32 34 36 38 40 42 44 LO FREQUENCY (GHz) LO FREQUENCY (GHz) 5 20 IF FREQUENCY (GHz) RF FREQUENCY (GHz) RETURN LOSS (dB) MIXERS - SUB HARMONIC - CHIP 0 9 dBm LO/RF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz 2LO/RF Isolation ISOLATION (dB) 50 40 30 20 10 0 28 30 32 34 36 38 40 42 44 LO FREQUENCY (GHz) 2XLO/RF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] MIXERS - SUB HARMONIC - CHIP 60 6 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz MIXERS - SUB HARMONIC - CHIP Table 1. Absolute Maximum Ratings RF Input (LO = +9 dBm) +5 dBm LO Drive +20 dBm IF Input +3 dBm Maximum Junction Temperature 170 °C Thermal Resistance (RTH) (junction to die bottom) 555 °C/W Operating Temperature -55 to +85 °C Storage Temperature -65 to 150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Table 2. Die Packaging Information Standard Alternate GP-2 (Gel Pack) [2] [1] [1] For more information refer to the “Packaging information” Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation. 7 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS 0.004” 3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099]. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± 0.002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz Table 3. Pad Descriptions Function Description 1 RF This pad is matched to 50 Ohms. 2 LO This pad is AC coupled and Matched to 50 Ohms. 3 IF This pad is AC coupled and Matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground Pad Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] MIXERS - SUB HARMONIC - CHIP Pad Number 8 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs MIXERS - SUB HARMONIC - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (molytab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER, 71 - 86 GHz MIXERS - SUB HARMONIC - CHIP Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10